NiO/AlGaN interface reconstruction and transport manipulation of p-NiO gated AlGaN/GaN HEMTs

2021 ◽  
Vol 8 (4) ◽  
pp. 041405
Author(s):  
Hui Guo ◽  
Hehe Gong ◽  
Xinxin Yu ◽  
Rui Wang ◽  
Qing Cai ◽  
...  
Keyword(s):  
Interface Reconstruction ◽  
Gan Hemts

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

Microwave Performance of Ferroelectric-Gated GaN HEMTs

2020 ◽  
Author(s):  
Chunlei Wu ◽  
Jeffrey Smith ◽  
Suman Datta ◽  
Yu Cao ◽  
Jinqiao Xie ◽  
...  
Keyword(s):  
Gan Hemts

Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain

2021 ◽  
pp. 106931
Author(s):  
Haiyong Wang ◽  
Wei Mao ◽  
Shenglei Zhao ◽  
Jiabo Chen ◽  
Ming Du ◽  
...  
Keyword(s):  
Reverse Blocking ◽  
Gan Hemts

Improvements From SiC Substrate Thinning in AlGaN/GaN HEMTs: Disparate Effects on Contacts, Access and Channel Regions

2021 ◽  
Vol 42 (5) ◽  
pp. 684-687
Author(s):  
Bazila Parvez ◽  
Jaya Jha ◽  
Pankaj Upadhyay ◽  
Navneet Bhardwaj ◽  
Yogendra Yadav ◽  
...  
Keyword(s):  
Gan Hemts

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

2020 ◽  
Vol 67 (12) ◽  
pp. 5454-5459
Author(s):  
Xuan Li ◽  
Shiwei Feng ◽  
Chang Liu ◽  
Yamin Zhang ◽  
Kun Bai ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
High Voltage ◽  
Measurement Method ◽  
Resistance Measurement ◽  
Gan Hemts
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