scholarly journals Uniqueness of parameter estimates obtained from fitting free carrier absorption data of silicon wafers

AIP Advances ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 105003
Author(s):  
Qian Wang ◽  
Chenyang Wei ◽  
Lei Gong ◽  
Liguo Wang ◽  
Yaqing Li ◽  
...  
Keyword(s):  
Free Carrier ◽  
Silicon Wafers ◽  
Parameter Estimates ◽  
Free Carrier Absorption ◽  
Absorption Data ◽  
Carrier Absorption

Free Carrier Absorption in P-Type Epitaxial Si and GaAs Films for far-Infrared Detection

1997 ◽  
Vol 484 ◽  
Author(s):  
A. O. U. Perera ◽  
W. Z. Shen ◽  
M. O. Tanner ◽  
K. L. Wang ◽  
W. Schaff
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Far Infrared ◽  
Infrared Region ◽  
Free Carrier ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Absorption Data ◽  
Carrier Absorption ◽  
P Type

AbstractWe report the investigation of free-carrier absorption characteristics for epitaxially grown p-type thin films in the far-infrared region (50 ∼ 200 μm), where homojunction interfacial workfunction internal photoemission (HIWIP) detectors are employed. Five Si and three GaAs thin films were grown by MBE over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The freehole absorption is found to be almost independent of the wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors. The detector responsivity follows the quantum efficiency predicted by concentration dependence of the free carrier absorption coefficient.

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