Electrical transport modulation of VO2/Si(111) heterojunction by engineering interfacial barrier height

2021 ◽  
Vol 129 (24) ◽  
pp. 244502
Author(s):  
Basanta Roul ◽  
Deependra Kumar Singh ◽  
Rohit Pant ◽  
Arun Malla Chowdhury ◽  
K. K. Nanda ◽  
...  
Keyword(s):  
Barrier Height ◽  
Electrical Transport ◽  
Transport Modulation

scholarly journals Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces

AIP Advances ◽  
2015 ◽  
Vol 5 (3) ◽  
pp. 037130 ◽  
Author(s):  
Basanta Roul ◽  
Shruti Mukundan ◽  
Greeshma Chandan ◽  
Lokesh Mohan ◽  
S. B. Krupanidhi
Keyword(s):  
Barrier Height ◽  
Electrical Transport ◽  
Gan Heterostructure

Tunable electronic properties and Schottky barrier in a graphene/WSe2 heterostructure under out-of-plane strain and an electric field

2020 ◽  
Vol 22 (41) ◽  
pp. 23699-23706
Author(s):  
Rui Zhang ◽  
Guoqiang Hao ◽  
Xiaojun Ye ◽  
Shangpeng Gao ◽  
Hongbo Li
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Schottky Barrier ◽  
Plane Strain ◽  
Barrier Height ◽  
Electrical Transport ◽  
Schottky Barrier Height ◽  
Nanoelectronic Devices ◽  
Transport Behavior ◽  
Out Of Plane

Tuning the electrical transport behavior and reducing the Schottky barrier height of nanoelectronic devices remain a great challenge.

scholarly journals Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Mahesh Kumar ◽  
Basanta Roul ◽  
Thirumaleshwara N. Bhat ◽  
Mohana K. Rajpalke ◽  
A. T. Kalghatgi ◽  
...  
Keyword(s):  
Barrier Height ◽  
Electrical Transport ◽  
Schottky Diodes ◽  
Indium Nitride ◽  
Effective Area ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Correct Determination ◽  
Barrier Inhomogeneity ◽  
20 Nm

The electrical transport behavior ofn-nindium nitride nanodot-silicon (InN ND-Si) heterostructure Schottky diodes is reported here, which have been fabricated by plasma-assisted molecular beam epitaxy. InN ND structures were grown on a 20 nm InN buffer layer on Si substrates. These dots were found to be single crystalline and grown along [0 0 0 1] direction. Temperature-dependent current density-voltage plots (J-V-T) reveal that the ideality factor (η) and Schottky barrier height (SBH) (ΦB) are temperature dependent. The incorrect values of the Richardson constant (A**) produced suggest an inhomogeneous barrier. Descriptions of the experimental results were explained by using two models. First one is barrier height inhomogeneities (BHIs) model, in which considering an effective area of the inhomogeneous contact provided a procedure for a correct determination ofA**. The Richardson constant is extracted ~110 A cm-2K-2using the BHI model and that is in very good agreement with the theoretical value of 112 A cm-2K-2. The second model uses Gaussian statistics and by this, mean barrier heightΦ0andA**were found to be 0.69 eV and 113 A cm-2K-2, respectively.

ELECTRICAL TRANSPORT AND STABILITY OF TMxSn1-x AMORPHOUS ALLOYS (TM = Fe, Co, Ni)

1980 ◽  
Vol 41 (C8) ◽  
pp. C8-477-C8-480
Author(s):  
G. Marchal ◽  
J. F. Geny ◽  
Ph. Mangin ◽  
Chr. Janot
Keyword(s):  
Electrical Transport ◽  
Amorphous Alloys

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

Covalent Atomic Bridges Enable Unidirectional Enhancement of Electronic Transport in Aligned Carbon Nanotubes

2019 ◽  
Author(s):  
Mingguang Chen ◽  
Wangxiang Li ◽  
Anshuman Kumar ◽  
Guanghui Li ◽  
Mikhail Itkis ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electrical Transport ◽  
Large Scale ◽  
The Novel ◽  
Electrical Measurements ◽  
Metal Atoms ◽  
Aligned Carbon Nanotubes ◽  
Transport Channels ◽  
Walled Carbon Nanotubes ◽  
Bulk Structures

<p>Interconnecting the surfaces of nanomaterials without compromising their outstanding mechanical, thermal, and electronic properties is critical in the design of advanced bulk structures that still preserve the novel properties of their nanoscale constituents. As such, bridging the p-conjugated carbon surfaces of single-walled carbon nanotubes (SWNTs) has special implications in next-generation electronics. This study presents a rational path towards improvement of the electrical transport in aligned semiconducting SWNT films by deposition of metal atoms. The formation of conducting Cr-mediated pathways between the parallel SWNTs increases the transverse (intertube) conductance, while having negligible effect on the parallel (intratube) transport. In contrast, doping with Li has a predominant effect on the intratube electrical transport of aligned SWNT films. Large-scale first-principles calculations of electrical transport on aligned SWNTs show good agreement with the experimental electrical measurements and provide insight into the changes that different metal atoms exert on the density of states near the Fermi level of the SWNTs and the formation of transport channels. </p>

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