Strain modulation for enhancing Cu–Zn ordering in CZTS absorber layer using seed layer assisted growth for efficient carrier transport

2021 ◽  
Vol 118 (25) ◽  
pp. 252108
Author(s):  
Kulwinder Kaur ◽  
Anupam Ghosh ◽  
Nisika ◽  
Mukesh Kumar
Keyword(s):  
Seed Layer ◽  
Carrier Transport ◽  
Absorber Layer ◽  
Strain Modulation

Growth of Large Grain Polycrystalline Silicon Thin Film on Soda-lime Glass at Low Temperature for Solar Cell Applications

2011 ◽  
Vol 1321 ◽  
Author(s):  
K. Wang ◽  
K. H. Wong
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Low Temperature ◽  
Thin Film Solar Cell ◽  
Seed Layer ◽  
Polycrystalline Silicon ◽  
Soda Lime ◽  
Absorber Layer ◽  
Soda Lime Glass ◽  
Si Thin Film

ABSTRACTHigh quality polycrystalline silicon (poly-Si) thin film solar cell was successfully fabricated on soda-lime glass substrates by electron beam (Ebeam) evaporation at low processing temperature. The initial poly-Si seed layer (p+-type 0.5 μm thick) was grown via the aluminum induced crystallization (AIC) method at 450 °C. Prominent interdiffusion and Si crystallization have been observed. X-ray diffraction (XRD) shows that (111) is the dominating crystalline orientation. Post annealing at 450 °C for six hours has produced densely packed Si grains with dimension of more than 10 μm in the plane of the film. Non-destructive Raman spectroscopy reveals the remarkable crystalline improvement for samples after thermal treatment. After removing the top diffused Al by chemical means, an absorber layer (p-type) of 0.9 μm thick was subsequently deposited onto the seed layer by Ebeam evaporation at 500 °C. Transmission electron microscopy (TEM) confirmed good homo-epitaxial growth. Without breaking the high vacuum, an n-type amorphous Si (a-Si) layer (0.7 μm thick) was coated onto the absorber layer to form p-n junction. The corresponding I-V characteristics suggest that our low temperature processing technique is applicable for production of poly-Si thin film solar cell on low cost substrates.

A Tem study of Epitaxial FE/AG and MN/AG Superlattices

1989 ◽  
Vol 160 ◽  
Author(s):  
S. Nahm ◽  
L. Salamanca — Riba ◽  
B. T. Jonker ◽  
G. A. Prinz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Buffer Layer ◽  
Seed Layer ◽  
Gaas Substrate ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Strain Modulation ◽  
Film Substrate ◽  
Sharp Interfaces

AbstractWe have studied the epitaxial growth and structural properities of single crystal Fe/Ag and Mn/Ag superlattices grown on (001) GaAs substrates using transmission electron microscopy. A buffer layer of Ag (001) was grown on a 5 monolayer Fe seed layer on the (001) GaAs substrate before the growth of the superlattice to obtain good quality films. For some samples an intermediate buffer layer of ZnSe was used, as well. Both Fe/Ag and Mn/Ag superlattices with a Ag buffer layer show very sharp interfaces. The densities of dislocations in the film and the buffer layer are the same suggesting that the dislocations originate at the film/substrate interface. We have observed evidence for a strain modulation of ≈ 8 Å in the Mn layer for thick (≈ 22 Å) Mn layers in the superlattice samples but not in samples with a thin Mn layer.

Study of Nucleation of Electroless Cu Deposition on Pd

1996 ◽  
Vol 451 ◽  
Author(s):  
R. Amster ◽  
B. Johnson ◽  
L. S. Vanasupa
Keyword(s):  
Seed Layer ◽  
Si Substrate

ABSTRACTWe studied the nucleation of Cu deposited by an electroless bath. A Pd seed layer was sputtered onto a (100) Si substrate and analyzed with GIX, STM, and AFM. The seed layer was then placed in varying ED-Cu bath conditions and also analyzed using GIX, STM, and AFM. GIX analysis results show a (111) texture for the Pd seed layer as well as the ED-Cu layer. The seed layer's influence on the deposited Cu grain's texture was found to be inconclusive.

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

Cost Effective Synthesis and Fabrication of Phase-Pure Kesterite Cu2-xZn1.3SnS4 P-type Absorber Layer Thin Films by Solvent Based Process Technique for Photovoltaic Solar Energy Applications

2018 ◽  
Vol 7 (4) ◽  
pp. 36
Author(s):  
B. Khadambari ◽  
S. S. Bhattacharya
Keyword(s):  
Solar Energy ◽  
Renewable Energy Sources ◽  
Cost Effective ◽  
Absorber Layer ◽  
Window Layer ◽  
Energy Applications ◽  
Process Technique ◽  
Absorber Material ◽  
Effective Synthesis ◽  
P Type

Solar has become one of the fastest growing renewable energy sources. With the push towards sustainability it is an excellent solution to resolve the issue of our diminishing finite resources. Alternative photovoltaic systems are of much importance to utilize solar energy efficiently. The Cu-chalcopyrite compounds CuInS2 and CuInSe2 and their alloys provide absorber material of high absorption coefficients of the order of 105 cm-1. Cu2ZnSnS4 (CZTS) is more promising material for photovoltaic applications as Zn and Sn are abundant materials of earth’s crust. Further, the preparation of CZTS-ink facilitates the production of flexible solar cells. The device can be designed with Al doped ZnO as the front contact, n-type window layer (e.g. intrinsic ZnO); an n-type thin film buffer layer (e.g. CdS) and a p-type CZTS absorber layer with Molybdenum (Mo) substrate as back contact. In this study, CZTS films were synthesized by a non-vaccum solvent based process technique from a molecular-ink using a non toxic eco-friendly solvent dimethyl sulfoxide (DMSO). The deposited CZTS films were optimized and characterized by XRD, UV-visible spectroscopy and SEM.

Carrier Transport in 2-D Materials: an Ab Initio Study

2019 ◽  
Author(s):  
Mathieu Luisier ◽  
Aron Szabo ◽  
Cedric Klinkert ◽  
Christian Stieger ◽  
Martin Rau ◽  
...  
Keyword(s):  
Ab Initio ◽  
Carrier Transport ◽  
Ab Initio Study

Limits of Charge Carrier Transport in Halide Perovskites Revealed by Optical-Pump Terahertz-Probe Spectroscopy

2019 ◽  
Author(s):  
Hannes Hempel ◽  
Andrei Petsiu ◽  
Martin Stolterfoht ◽  
Pascal Becker ◽  
Dieter Neher ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Optical Pump ◽  
Halide Perovskites ◽  
Probe Spectroscopy
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