scholarly journals Self-bias voltage formation and charged particle dynamics in multi-frequency capacitively coupled plasmas

AIP Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 075024
Author(s):  
R. U. Masheyeva ◽  
K. N. Dzhumagulova ◽  
M. Myrzaly ◽  
J. Schulze ◽  
Z. Donkó
Keyword(s):  
Charged Particle ◽  
Bias Voltage ◽  
Particle Dynamics ◽  
Capacitively Coupled ◽  
Self Bias ◽  
Coupled Plasmas

Estimation of Ion Impact Energies and Electrode Self-Bias Voltage in Capacitive RF Discharges

1987 ◽  
Vol 98 ◽  
Author(s):  
S. E. Savas
Keyword(s):  
Bias Voltage ◽  
Capacitively Coupled ◽  
Ion Flow ◽  
Rf Discharges ◽  
Self Bias ◽  
Ion Energies ◽  
Bias Ratio ◽  
Ionization Model ◽  
Ion Impact ◽  
Impact Energies

ABSTRACTThe dependences of the electrode self-bias voltage and the ratio of ion energies on electrode area ratio are calculated for a model of capacitively coupled rf discharges. It is assumed that concentric spherical elecrodes with fluid-like radial ion flow adequately models the ion motion, that sheath impedances are dominant, and that ionization processes in the glow are due to ohmically heated electrons. Results show that the ratio of ion energies impacting the smaller electrode to those on the larger depends on the ratio of electrode areas in a more complex manner than a power law.The reason for this is that sheath impedances are more resistive or capacitive at different times in the rf cycle. The self-bias ratio is found to depend relatively little on the ionization model or the pressure but differs substantially from the “power law” result. The agreement of measurements with the model is fairly good.

scholarly journals Characterization of SiO2 Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 5036
Author(s):  
Chulhee Cho ◽  
Kwangho You ◽  
Sijun Kim ◽  
Youngseok Lee ◽  
Jangjae Lee ◽  
...  
Keyword(s):  
Peak Power ◽  
Pulsed Plasma ◽  
Capacitively Coupled ◽  
Plasma Diagnosis ◽  
Self Bias ◽  
Coupled Plasmas ◽  
Off Time ◽  
Insight Into ◽  
Sio2 Etching

Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight into previously observed phenomena, SiO2 etching characteristics were investigated under various pulsed plasma conditions and analyzed through plasma diagnostics. Specifically, the disappearance of micro-trenching from the use of pulse-modulated plasma is analyzed via self-bias, and the phenomenon that as power off-time increases, the sidewall angle increases is interpreted via radical species density and self-bias. Further, the change from etching to deposition with decreased peak power during processing is understood via self-bias and electron density. It is expected that this research will provide an informative window for the optimization of SiO2 etching and for basic processing databases including plasma diagnosis for advanced plasma processing simulators.

Ion flux's pressure dependence in an asymmetric capacitively coupled rf discharge in NF3

Open Physics ◽  
2004 ◽  
Vol 2 (1) ◽  
pp. 1-11 ◽  
Author(s):  
Emil Mateev ◽  
Ivan Zhelyazkov
Keyword(s):  
Bias Voltage ◽  
Essential Feature ◽  
Gas Pressure ◽  
Ion Flux ◽  
The Self ◽  
Rf Discharge ◽  
Rf Power ◽  
Capacitively Coupled ◽  
Self Bias ◽  
Basic Equations

AbstractStarting from an analytical macroscopic/phenomenological model yielding the self-bias voltage as a function of the absorbed radio-frequency (rf) power of an asymmetric capacitively coupled discharge in NF3 this paper studies the dependence of the ion flux onto the powered electrode on the gas pressure. An essential feature of the model is the assumption that the ions' drift velocity in the sheath near the powered electrode is proportional to E α, where E=−ΔU (U being the self-bias potential), and α is a coefficient depending on the gas pressure and cross section of elastic ion-neutral collisions. The model also considers the role of γ-electrons, stochastic heating as well as the contribution of the active electron current to the global discharge power balance. Numerically solving the model's basic equations one can extract the magnitude of the ion flux (at three different gas pressures) in a technological etching device (Alcatel GIR 220) by using easily measurable quantities, notably the self-bias voltage and absorbed rf power.

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