scholarly journals Intrinsic piezoelectric ferromagnetism with large out-of-plane piezoelectric response in Janus monolayer CrB r 1.5 I 1.5

2021 ◽  
Vol 129 (21) ◽  
pp. 214301
Author(s):  
San-Dong Guo ◽  
Xiao-Shu Guo ◽  
Xiu-Xia Cai ◽  
Wen-Qi Mu ◽  
Wen-Cai Ren
Keyword(s):  
Piezoelectric Response ◽  
Out Of Plane

Large out-of-plane piezoelectric response of wurtzite InN under biaxial strain

2021 ◽  
Author(s):  
Ouahiba Ouahiba Namir ◽  
Joseph Kioseoglou ◽  
Philomela Komninou ◽  
Theodoros Karakostas ◽  
Imad Belabbas
Keyword(s):  
Piezoelectric Response ◽  
Biaxial Strain ◽  
Out Of Plane

First-principles screening of novel ferroelectric MXene phases with a large piezoelectric response and unusual auxeticity

Nanoscale ◽  
2020 ◽  
Vol 12 (41) ◽  
pp. 21291-21298
Author(s):  
Lei Zhang ◽  
Cheng Tang ◽  
Chunmei Zhang ◽  
Aijun Du
Keyword(s):  
Surface Functionalization ◽  
First Principles ◽  
Piezoelectric Response ◽  
Out Of Plane

Three novel ferroelectric MXene phases with out-of-plane and in-plane ferroelectricity, piezoelectricity, and auxeticity are highlighted that can be achieved by surface functionalization.

Frequency-Dependent Electromechanical Response in Ferroelectric Materials Measured via Piezoresponse Force Microscopy

2003 ◽  
Vol 784 ◽  
Author(s):  
I. K. Bdikin ◽  
V. V. Shvartsman ◽  
S-H. Kim ◽  
J. Manuel Herrero ◽  
A. L. Kholkin
Keyword(s):  
Simple Model ◽  
Piezoresponse Force Microscopy ◽  
Ferroelectric Materials ◽  
Piezoelectric Response ◽  
Driving Frequency ◽  
Polarization Direction ◽  
Frequency Dependent ◽  
Force Microscopy ◽  
Out Of Plane ◽  
Frequency Phase

ABSTRACTLocal piezoelectric signal is measured via Piezoresponse Force Microscopy (PFM) in PbZr0.3Ti0.7O3 films and PbZr1/3Nb2/3O3-0.045PbTiO3 single crystals. It is observed that the amplitude of piezoelectric response is almost independent on frequency for vertical (out of plane) signal and strongly decreases with increasing frequency in the range 10–100 kHz for lateral (in-plane) response. Moreover, the in-plane piezoelectric contrast is reversed when the measurements are done at high enough frequency (phase shift exceeds 90°). As a result, the inplane polarization direction can be misinterpreted if the driving frequency exceeds certain level. For the explanation of observed effect a simple model is proposed that takes into account a possible slip between the conductive PFM tip and moving piezoelectric surface. The implications of the observed frequency-dependent contrast for the domain imaging in ferroelectric materials are discussed.

Janus MSiGeN4 (M = Zr and Hf) monolayers derived from centrosymmetric β-MA2Z4: A first-principles study

2021 ◽  
Vol 42 (12) ◽  
pp. 122002
Author(s):  
Xiaoshu Guo ◽  
Sandong Guo
Keyword(s):  
Band Gap ◽  
Tensile Strain ◽  
Compressive Strain ◽  
Valence Band Maximum ◽  
Spin Splitting ◽  
Piezoelectric Response ◽  
Generalized Gradient ◽  
Thermal Stabilities ◽  
Out Of Plane ◽  
Indirect Band Gap

Abstract A two-dimensional (2D) MA2Z4 family with and phases has been attracting tremendous interest, the MoSi2N4 and WSi2N4 of which have been successfully fabricated ( Science 369, 670 (2020)). Janus monolayers have been achieved in many 2D families, so it is interesting to construct a Janus monolayer from the MA2Z4 family. In this work, Janus MSiGeN4 (M = Zr and Hf) monolayers are predicted from -MA2Z4, which exhibit dynamic, mechanical and thermal stabilities. It is found that they are indirect band-gap semiconductors by using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC). With biaxial strain from 0.90 to 1.10, the energy band gap shows a nonmonotonic behavior due to a change of conduction band minimum (CBM). A semiconductor to metal transition can be induced by both compressive and tensile strains, and the phase transformation point is about 0.96 for compressive strain and 1.10 for tensile strain. The tensile strain can change the positions of CBM and valence band maximum (VBM), and can also induce the weak Rashba-type spin splitting near CBM. For MSiGeN4 (M = Zr and Hf) monolayers, both an in-plane and out-of-plane piezoelectric response can be produced, when a uniaxial strain in the basal plane is applied, which reveals the potential as piezoelectric 2D materials. The high absorption coefficients in the visible light region suggest that MSiGeN4 (M = Zr and Hf) monolayers have potential photocatalytic applications. Our works provide an idea to achieve a Janus structure from the MA2Z4 family, and can hopefully inspire further research exploring Janus MA2Z4 monolayers.

Grain separation enhanced magnetic coercivity in Pt/Co multilayers.

1993 ◽  
Vol 51 ◽  
pp. 1038-1039 ◽  
Author(s):  
G.A. Bertero ◽  
R. Sinclair
Keyword(s):  
Remanent Magnetization ◽  
Strong Influence ◽  
Uniaxial Anisotropy ◽  
Magnetic Coupling ◽  
Recording Media ◽  
Magnetic Media ◽  
Signal To Noise ◽  
Out Of Plane ◽  
Longitudinal Recording ◽  
The Relationship

Pt/Co multilayers displaying perpendicular (out-of-plane) magnetic anisotropy and 100% perpendicular remanent magnetization are strong candidates as magnetic media for the next generation of magneto-optic recording devices. The magnetic coercivity, Hc, and uniaxial anisotropy energy, Ku, are two important materials parameters, among others, in the quest to achieving higher recording densities with acceptable signal to noise ratios (SNR). The relationship between Ku and Hc in these films is not a simple one since features such as grain boundaries, for example, can have a strong influence on Hc but affect Ku only in a secondary manner. In this regard grain boundary separation provides a way to minimize the grain-to-grain magnetic coupling which is known to result in larger coercivities and improved SNR as has been discussed extensively in the literature for conventional longitudinal recording media.We present here results from the deposition of two Pt/Co/Tb multilayers (A and B) which show significant differences in their coercive fields.

Piezoelectric response of pulsed laser deposited heterostructures PZT/YBCO, PLZT/YBCO

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-183-Pr9-186
Author(s):  
M. Tyunina ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
I. Shorubalko
Keyword(s):  
Pulsed Laser ◽  
Piezoelectric Response

Anisotropy of Nanoindentation – a tool for the determination of nanocrystal orientation ?

2003 ◽  
Vol 779 ◽  
Author(s):  
David Christopher ◽  
Steven Kenny ◽  
Roger Smith ◽  
Asta Richter ◽  
Bodo Wolf ◽  
...  
Keyword(s):  
Crystal Surface ◽  
Scanning Force Microscopy ◽  
Depth Range ◽  
Dislocation Loops ◽  
Force Microscopy ◽  
Pile Up ◽  
Out Of Plane ◽  
Scanning Force ◽  
Dynamics Simulations

AbstractThe pile up patterns arising in nanoindentation are shown to be indicative of the sample crystal symmetry. To explain and interpret these patterns, complementary molecular dynamics simulations and experiments have been performed to determine the atomistic mechanisms of the nanoindentation process in single crystal Fe{110}. The simulations show that dislocation loops start from the tip and end on the crystal surface propagating outwards along the four in-plane <111> directions. These loops carry material away from the indenter and form bumps on the surface along these directions separated from the piled-up material around the indenter hole. Atoms also move in the two out-of-plane <111> directions causing propagation of subsurface defects and pile-up around the hole. This finding is confirmed by scanning force microscopy mapping of the imprint, the piling-up pattern proving a suitable indicator of the surface crystallography. Experimental force-depth curves over the depth range of a few nanometers do not appear smooth and show distinct pop-ins. On the sub-nanometer scale these pop-ins are also visible in the simulation curves and occur as a result of the initiation of the dislocation loops from the tip.

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