Virtual Out-of-Plane Piezoelectric Response in MoS2 Layers Controlled by Ferroelectric Polarization

2017 ◽  
Vol 10 (1) ◽  
pp. 1334-1339 ◽  
Author(s):  
Hye-Jin Jin ◽  
Woo Young Yoon ◽  
William Jo
Keyword(s):  
Ferroelectric Polarization ◽  
Piezoelectric Response ◽  
Out Of Plane

scholarly journals Intrinsic piezoelectric ferromagnetism with large out-of-plane piezoelectric response in Janus monolayer CrB r 1.5 I 1.5

2021 ◽  
Vol 129 (21) ◽  
pp. 214301
Author(s):  
San-Dong Guo ◽  
Xiao-Shu Guo ◽  
Xiu-Xia Cai ◽  
Wen-Qi Mu ◽  
Wen-Cai Ren
Keyword(s):  
Piezoelectric Response ◽  
Out Of Plane

Large out-of-plane piezoelectric response of wurtzite InN under biaxial strain

2021 ◽  
Author(s):  
Ouahiba Ouahiba Namir ◽  
Joseph Kioseoglou ◽  
Philomela Komninou ◽  
Theodoros Karakostas ◽  
Imad Belabbas
Keyword(s):  
Piezoelectric Response ◽  
Biaxial Strain ◽  
Out Of Plane

scholarly journals Resistive switching behavior in α-In2Se3 nanoflakes modulated by ferroelectric polarization and interface defects

RSC Advances ◽  
2019 ◽  
Vol 9 (52) ◽  
pp. 30565-30569 ◽  
Author(s):  
Pengfei Hou ◽  
Siwei Xing ◽  
Xin Liu ◽  
Cheng Chen ◽  
Xiangli Zhong ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Resistive Switching Behavior ◽  
Free Carriers ◽  
Interface Defects ◽  
Out Of Plane ◽  
Planar Device

A planar device based on an α-In2Se3 nanoflake, in which the in-plane/out-of-plane polarization, free carriers and oxygen vacancies in SiO2 contribute to the resistive switching behavior of the device.

Giant tunneling electroresistance in two-dimensional ferroelectric tunnel junctions with out-of-plane ferroelectric polarization

2020 ◽  
Vol 101 (1) ◽  
Author(s):  
Lili Kang ◽  
Peng Jiang ◽  
Hua Hao ◽  
Yanhong Zhou ◽  
Xiaohong Zheng ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Out Of Plane

First-principles screening of novel ferroelectric MXene phases with a large piezoelectric response and unusual auxeticity

Nanoscale ◽  
2020 ◽  
Vol 12 (41) ◽  
pp. 21291-21298
Author(s):  
Lei Zhang ◽  
Cheng Tang ◽  
Chunmei Zhang ◽  
Aijun Du
Keyword(s):  
Surface Functionalization ◽  
First Principles ◽  
Piezoelectric Response ◽  
Out Of Plane

Three novel ferroelectric MXene phases with out-of-plane and in-plane ferroelectricity, piezoelectricity, and auxeticity are highlighted that can be achieved by surface functionalization.

Large out-of-plane ferroelectric polarization in flat epitaxial BaTiO3 on CoFe2O4 heterostructures

2013 ◽  
Vol 102 (17) ◽  
pp. 172907 ◽  
Author(s):  
N. Dix ◽  
I. Fina ◽  
R. Bachelet ◽  
L. Fàbrega ◽  
C. Kanamadi ◽  
...  
Keyword(s):  
Ferroelectric Polarization ◽  
Out Of Plane

Frequency-Dependent Electromechanical Response in Ferroelectric Materials Measured via Piezoresponse Force Microscopy

2003 ◽  
Vol 784 ◽  
Author(s):  
I. K. Bdikin ◽  
V. V. Shvartsman ◽  
S-H. Kim ◽  
J. Manuel Herrero ◽  
A. L. Kholkin
Keyword(s):  
Simple Model ◽  
Piezoresponse Force Microscopy ◽  
Ferroelectric Materials ◽  
Piezoelectric Response ◽  
Driving Frequency ◽  
Polarization Direction ◽  
Frequency Dependent ◽  
Force Microscopy ◽  
Out Of Plane ◽  
Frequency Phase

ABSTRACTLocal piezoelectric signal is measured via Piezoresponse Force Microscopy (PFM) in PbZr0.3Ti0.7O3 films and PbZr1/3Nb2/3O3-0.045PbTiO3 single crystals. It is observed that the amplitude of piezoelectric response is almost independent on frequency for vertical (out of plane) signal and strongly decreases with increasing frequency in the range 10–100 kHz for lateral (in-plane) response. Moreover, the in-plane piezoelectric contrast is reversed when the measurements are done at high enough frequency (phase shift exceeds 90°). As a result, the inplane polarization direction can be misinterpreted if the driving frequency exceeds certain level. For the explanation of observed effect a simple model is proposed that takes into account a possible slip between the conductive PFM tip and moving piezoelectric surface. The implications of the observed frequency-dependent contrast for the domain imaging in ferroelectric materials are discussed.

Janus MSiGeN4 (M = Zr and Hf) monolayers derived from centrosymmetric β-MA2Z4: A first-principles study

2021 ◽  
Vol 42 (12) ◽  
pp. 122002
Author(s):  
Xiaoshu Guo ◽  
Sandong Guo
Keyword(s):  
Band Gap ◽  
Tensile Strain ◽  
Compressive Strain ◽  
Valence Band Maximum ◽  
Spin Splitting ◽  
Piezoelectric Response ◽  
Generalized Gradient ◽  
Thermal Stabilities ◽  
Out Of Plane ◽  
Indirect Band Gap

Abstract A two-dimensional (2D) MA2Z4 family with and phases has been attracting tremendous interest, the MoSi2N4 and WSi2N4 of which have been successfully fabricated ( Science 369, 670 (2020)). Janus monolayers have been achieved in many 2D families, so it is interesting to construct a Janus monolayer from the MA2Z4 family. In this work, Janus MSiGeN4 (M = Zr and Hf) monolayers are predicted from -MA2Z4, which exhibit dynamic, mechanical and thermal stabilities. It is found that they are indirect band-gap semiconductors by using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC). With biaxial strain from 0.90 to 1.10, the energy band gap shows a nonmonotonic behavior due to a change of conduction band minimum (CBM). A semiconductor to metal transition can be induced by both compressive and tensile strains, and the phase transformation point is about 0.96 for compressive strain and 1.10 for tensile strain. The tensile strain can change the positions of CBM and valence band maximum (VBM), and can also induce the weak Rashba-type spin splitting near CBM. For MSiGeN4 (M = Zr and Hf) monolayers, both an in-plane and out-of-plane piezoelectric response can be produced, when a uniaxial strain in the basal plane is applied, which reveals the potential as piezoelectric 2D materials. The high absorption coefficients in the visible light region suggest that MSiGeN4 (M = Zr and Hf) monolayers have potential photocatalytic applications. Our works provide an idea to achieve a Janus structure from the MA2Z4 family, and can hopefully inspire further research exploring Janus MA2Z4 monolayers.

Grain separation enhanced magnetic coercivity in Pt/Co multilayers.

1993 ◽  
Vol 51 ◽  
pp. 1038-1039 ◽  
Author(s):  
G.A. Bertero ◽  
R. Sinclair
Keyword(s):  
Remanent Magnetization ◽  
Strong Influence ◽  
Uniaxial Anisotropy ◽  
Magnetic Coupling ◽  
Recording Media ◽  
Magnetic Media ◽  
Signal To Noise ◽  
Out Of Plane ◽  
Longitudinal Recording ◽  
The Relationship

Pt/Co multilayers displaying perpendicular (out-of-plane) magnetic anisotropy and 100% perpendicular remanent magnetization are strong candidates as magnetic media for the next generation of magneto-optic recording devices. The magnetic coercivity, Hc, and uniaxial anisotropy energy, Ku, are two important materials parameters, among others, in the quest to achieving higher recording densities with acceptable signal to noise ratios (SNR). The relationship between Ku and Hc in these films is not a simple one since features such as grain boundaries, for example, can have a strong influence on Hc but affect Ku only in a secondary manner. In this regard grain boundary separation provides a way to minimize the grain-to-grain magnetic coupling which is known to result in larger coercivities and improved SNR as has been discussed extensively in the literature for conventional longitudinal recording media.We present here results from the deposition of two Pt/Co/Tb multilayers (A and B) which show significant differences in their coercive fields.

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