Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs
2017 ◽
Vol 64
(12)
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pp. 4980-4984
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2019 ◽
Vol 66
(2)
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pp. 976-982
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2000 ◽
Vol 147
(6)
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pp. 407
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Keyword(s):
2006 ◽
Vol 18
(11)
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pp. 1276-1278
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