Room temperature InAs/InAs1−xSbx single quantum well light emitting diodes with barriers for improved carrier confinement
2000 ◽
Vol 147
(6)
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pp. 407
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2010 ◽
Vol 530
(1)
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pp. 131/[287]-136/[292]
1996 ◽
Vol 67
(11)
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pp. 3795-3798
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2012 ◽
Vol 27
(4)
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pp. 045010
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