Temperature dependent gas sensor model for Schottky diode based on InAlN/GaN heterostructure

2021 ◽  
Author(s):  
Bhaskar Roy ◽  
Shubhankar Majumdar ◽  
Subhashis Das
Keyword(s):  
Gas Sensor ◽  
Schottky Diode ◽  
Temperature Dependent ◽  
Sensor Model ◽  
Gan Heterostructure

Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode

2015 ◽  
Author(s):  
Subhashis Das ◽  
S. Majumdar ◽  
R. Kumar ◽  
A. Chakraborty ◽  
A. Bag ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Schottky Diode ◽  
Model Based ◽  
Sensor Model ◽  
Gan Heterostructure

Temperature-Dependent Logic Failure in a GaAs Power Amplifier-Duplexer Module Caused by a Subtle Parasitic Schottky Diode

2014 ◽  
Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton
Keyword(s):  
Power Amplifier ◽  
Schottky Diode ◽  
Production Test ◽  
Temperature Dependent ◽  
Cold Temperatures ◽  
Collector Junction ◽  
Power Mode ◽  
The Difference ◽  
Base Contact ◽  
Single Power

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.

Temperature dependent electrical properties of Al/Cd0.8Zn0.2S/ITO Schottky diode

2015 ◽  
Author(s):  
Parameshwari P. M ◽  
Shrisha B. V ◽  
K Gopalakrishna Naik
Keyword(s):  
Electrical Properties ◽  
Schottky Diode ◽  
Temperature Dependent

Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis

2018 ◽  
Vol 113 ◽  
pp. 147-152 ◽  
Author(s):  
Apurba Chakraborty ◽  
Saptarsi Ghosh ◽  
Partha Mukhopadhyay ◽  
Subhashis Das ◽  
Ankush Bag ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Temperature Dependent ◽  
Gan Heterostructure ◽  
Trapped Charge

Surface and interface properties of PdCr/SiC Schottky diode gas sensor annealed at 425°C

1998 ◽  
Vol 42 (12) ◽  
pp. 2209-2214 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W Hunter ◽  
Philip G Neudeck ◽  
Dak Knight
Keyword(s):  
Gas Sensor ◽  
Schottky Diode ◽  
Interface Properties ◽  
Surface And Interface

scholarly journals An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH3 gas sensor applications

2014 ◽  
Vol 5 ◽  
pp. 726-734 ◽  
Author(s):  
Elnaz Akbari ◽  
Vijay Kumar Arora ◽  
Aria Enzevaee ◽  
Mohamad T Ahmadi ◽  
Mehdi Saeidmanesh ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Gas Sensor ◽  
Chemical Elements ◽  
Ambient Conditions ◽  
Detection Mechanism ◽  
Sensor Applications ◽  
Surface Molecules ◽  
Sensor Model ◽  
Current Voltage ◽  
Effect Transistor

Carbon, in its variety of allotropes, especially graphene and carbon nanotubes (CNTs), holds great potential for applications in variety of sensors because of dangling π-bonds that can react with chemical elements. In spite of their excellent features, carbon nanotubes (CNTs) and graphene have not been fully exploited in the development of the nanoelectronic industry mainly because of poor understanding of the band structure of these allotropes. A mathematical model is proposed with a clear purpose to acquire an analytical understanding of the field-effect-transistor (FET) based gas detection mechanism. The conductance change in the CNT/graphene channel resulting from the chemical reaction between the gas and channel surface molecules is emphasized. NH3 has been used as the prototype gas to be detected by the nanosensor and the corresponding current–voltage (I–V) characteristics of the FET-based sensor are studied. A graphene-based gas sensor model is also developed. The results from graphene and CNT models are compared with the experimental data. A satisfactory agreement, within the uncertainties of the experiments, is obtained. Graphene-based gas sensor exhibits higher conductivity compared to that of CNT-based counterpart for similar ambient conditions.

On an Electroless Plating (EP)-Based Pd/AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)-Type Hydrogen Gas Sensor

2012 ◽  
Vol 33 (6) ◽  
pp. 788-790 ◽  
Author(s):  
Chien-Chang Huang ◽  
Huey-Ing Chen ◽  
Tai-You Chen ◽  
Chi-Shiang Hsu ◽  
Chun-Chia Chen ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Electroless Plating ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Hydrogen Gas ◽  
Effect Transistor ◽  
Gan Heterostructure
Sign in / Sign up

Export Citation Format

Share Document