On an Electroless Plating (EP)-Based Pd/AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)-Type Hydrogen Gas Sensor

2012 ◽  
Vol 33 (6) ◽  
pp. 788-790 ◽  
Author(s):  
Chien-Chang Huang ◽  
Huey-Ing Chen ◽  
Tai-You Chen ◽  
Chi-Shiang Hsu ◽  
Chun-Chia Chen ◽  
...  
2010 ◽  
Vol 49 (2) ◽  
pp. 024206 ◽  
Author(s):  
Keiji Tsukada ◽  
Masatoshi Kariya ◽  
Tomiharu Yamaguchi ◽  
Toshihiko Kiwa ◽  
Hironobu Yamada ◽  
...  

2007 ◽  
Vol 7 (9) ◽  
pp. 1268-1269 ◽  
Author(s):  
Keiji Tsukada ◽  
Tomiharu Yamaguchi ◽  
Toshihiko Kiwa

2021 ◽  
Author(s):  
Salomé Forel ◽  
Leandro Sacco ◽  
Alice Castan ◽  
Ileana Florea ◽  
Costel Sorin Cojocaru

We design a gas sensor by combining two SWCNT-FET devices in an inverter configuration enabling a better system miniaturization together with a reduction of power consumption and ease of data processing.


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