Investigation of plasmonic properties of spin coated and spray coated IZO thin film

2021 ◽  
Author(s):  
K. Soumya ◽  
I. Packia Selvam ◽  
S. N. Potty
Keyword(s):  
Thin Film ◽  
Izo Thin Film

Preparation of In2O3-ZnO (IZO) Thin Film on Glass Substrate for Organic Light Emitting Device (OLED)

2010 ◽  
Vol 520 (1) ◽  
pp. 19/[295]-27/[303] ◽  
Author(s):  
Jeong Soo Hong ◽  
Sang Mo Kim ◽  
Sang Joon Park ◽  
Hyung Wook Choi ◽  
Kyung Hwan Kim
Keyword(s):  
Thin Film ◽  
Glass Substrate ◽  
Light Emitting ◽  
Organic Light ◽  
Izo Thin Film

Role of O2/Ar mixing ratio on the performances of IZO thin film transistors fabricated using a two-step deposition process

2011 ◽  
Vol 520 (5) ◽  
pp. 1475-1478 ◽  
Author(s):  
Won Kim ◽  
Sang-Hyuk Lee ◽  
Jung-Hwan Bang ◽  
Hyun-Seok Uhm ◽  
Jin-Seok Park
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Deposition Process ◽  
Mixing Ratio ◽  
Izo Thin Film

scholarly journals Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2552
Author(s):  
Xingwei Ding ◽  
Bing Yang ◽  
Haiyang Xu ◽  
Jie Qi ◽  
Xifeng Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Flexible Electronics ◽  
Room Temperature ◽  
Network Formation ◽  
Semiconductor Films ◽  
Uv Treatment ◽  
Indium Zinc Oxide ◽  
Izo Thin Film

Solution-processed thin film transistors (TFTs) used in flexible electronics require them to be fabricated under low temperature. Ultraviolet (UV) treatment is an effective method to transform the solution precursors into dense semiconductor films. In our work, high-quality indium zinc oxide (IZO) thin films were prepared from nitrate-based precursors after UV treatment at room temperature. After UV treatment, the structure of IZO thin films was gradually rearranged, resulting in good M–O–M network formation and bonds. TFTs using IZO as a channel layer were also fabricated on Si and Polyimide (PI) substrate. The field effect mobility, threshold voltage (Vth), and subthreshold swing (SS) for rigid and flexible IZO TFTs are 14.3 and 9.5 cm2/Vs, 1.1 and 1.7 V, and 0.13 and 0.15 V/dec., respectively. This low-temperature processed route will definitely contribute to flexible electronics fabrication.

Au/Cr/IZO thin film electrode for application of thermal controllable waveguide devices

2005 ◽  
Author(s):  
Huang-Chen Guo ◽  
Yung-Hsin Chen ◽  
Ying-Tsung Lu ◽  
Wann-Diing Tyan ◽  
Pong Lai ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Electrode ◽  
Thin Film Electrode ◽  
Waveguide Devices ◽  
Izo Thin Film

The Effects of SiO, SiON on IZO Thin Film Deposited by DCMG Method

2007 ◽  
Vol 124-126 ◽  
pp. 455-458
Author(s):  
Seong Hoon Kim ◽  
Han Ki Yoon ◽  
Riichi Murakami
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxygen Content ◽  
Glass Substrate ◽  
Single Layer ◽  
Target Type ◽  
Dc Magnetron Sputtering ◽  
Izo Thin Film ◽  
Pet Substrate

The thin films of SiO and SiON were deposited individually by the inclination opposite target type DC magnetron sputtering equipment onto the glass substrate. And it was deposited IZO(In2O3 (90wt.%) + ZnO(10wt.%)) on those films. The effects of SiO and SiON were investigated on properties of IZO thin films. AFM images of IZO thin film included SiON film were shown smoother surfaces than that included SiO film. Multi layers of IZO were shown good properties because it have high transmissivity. Resistivity is in inverse proportion to Mobility. If it deposited SiO and SiON, generate layer of change between two layers(SiO or SiON + Substrate). Layer of change influenced resistance because Oxygen content was more than single layer of IZO. In case of using PET substrate, it influenced stronger than Glass substrate for rigid gas permeable and osmosis.

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