Effect of processing conditions on the fracture behavior of Al-5Zn-1.5Mg-1.0Mn-0.35Cu alloy fabricated from recycled beverage cans (RBCs) for bumper beam applications

2021 ◽  
Author(s):  
Abubakar Kazeem ◽  
Mohammed H. Rady ◽  
Nur Azam Badarulzaman ◽  
Wan Fahmin Faiz Wan Ali ◽  
Mohd Azlan Suhaimi ◽  
...  
Keyword(s):  
Fracture Behavior ◽  
Processing Conditions ◽  
Bumper Beam

scholarly journals Fracture Toughness of Vapor Grown Carbon Nanofiber-Reinforced Polyethylene Composites

2009 ◽  
Vol 2009 ◽  
pp. 1-6 ◽  
Author(s):  
A. R. Adhikari ◽  
E. Partida ◽  
T. W. Petty ◽  
R. Jones ◽  
K. Lozano ◽  
...  
Keyword(s):  
Fracture Behavior ◽  
Carbon Nanofiber ◽  
Processing Conditions ◽  
Essential Work ◽  
Essential Work Of Fracture ◽  
Material Evaluation ◽  
Impact Fracture Behavior ◽  
The Impact ◽  
Work Of Fracture ◽  
Vapor Grown Carbon Nanofiber

The impact fracture behavior of a vapor grown carbon nanofiber (VGCNF) reinforced high-density polyethylene (PE) composite was evaluated. The samples consisting of pure PE and composites with 10 wt% and 20 wt% of VGCNFs were prepared by a combination of hot-pressing and extrusion methods. Extrusion was used to produce samples with substantially different shear histories. The fracture behavior of these samples was analyzed using the essential work of fracture (EWF) approach. The results showed an increase of 292% in the essential work of fracture for the loading of 10 wt%. Further increasing fiber loading to 20 wt% caused the essential work of fracture to increase only 193% with respect to the unmodified material. Evaluation of the fracture surface morphology indicated that the fibril frequency and microvoid size within the various fiber loadings depended strongly on processing conditions.

INFLUENCE OF PROCESSING CONDITIONS ON THE STRUCTURAL AND FRACTURE BEHAVIOR OF PP PIPE GRADES

2002 ◽  
Vol 41 (4-6) ◽  
pp. 711-723 ◽  
Author(s):  
E. Nezbedova ◽  
A. Zahradnickova ◽  
P. Bartaskova
Keyword(s):  
Fracture Behavior ◽  
Processing Conditions

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Fracture Behavior of AZ31-xCa (x=0, 0.7, 2.0 wt.%) Extrudes during Compression

2010 ◽  
Vol 48 (1) ◽  
pp. 85-89 ◽  
Author(s):  
Na Eun Kang ◽  
Chang Dong Yim ◽  
Bong Sun You ◽  
Ik Min Park
Keyword(s):  
Fracture Behavior

Progressive Debonding of Multilayer Interconnect Structures

1997 ◽  
Vol 473 ◽  
Author(s):  
Michael Lane ◽  
Robert Ware ◽  
Steven Voss ◽  
Qing Ma ◽  
Harry Fujimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Crack Growth ◽  
Driving Force ◽  
Adhesion Energy ◽  
Time Dependent ◽  
Multilayer Thin Films ◽  
Processing Conditions ◽  
Interface Morphology ◽  
Entire Sample ◽  
Crack Growth Velocity

ABSTRACTProgressive (or time dependent) debonding of interfaces poses serious problems in interconnect structures involving multilayer thin films stacks. The existence of such subcriticai debonding associated with environmentally assisted crack-growth processes is examined for a TiN/SiO2 interface commonly encountered in interconnect structures. The rate of debond extension is found to be sensitive to the mechanical driving force as well as the interface morphology, chemistry, and yielding of adjacent ductile layers. In order to investigate the effect of interconnect structure, particularly the effect of an adjacent ductile Al-Cu layer, on subcriticai debonding along the TiN/SiO2 interface, a set of samples was prepared with Al-Cu layer thicknesses varying from 0.2–4.0 μm. All other processing conditions remained the same over the entire sample run. Results showed that for a given crack growth velocity, the debond driving force scaled with Al-Cu layer thickness. Normalizing the data by the critical adhesion energy allowed a universal subcriticai debond rate curve to be derived.

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