Phase field study on the performance of artificial synapse device based on the motion of domain wall in ferroelectric thin films

2021 ◽  
Vol 118 (24) ◽  
pp. 242902
Author(s):  
Weiming Xiong ◽  
Linjie Liu ◽  
Jianyi Liu ◽  
Weijin Chen ◽  
Yue Zheng
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Field Study ◽  
Phase Field ◽  
Ferroelectric Thin Films ◽  
Artificial Synapse

A phase-field study of the scaling law in free-standing ferroelectric thin films

2015 ◽  
Vol 26 (50) ◽  
pp. 505701
Author(s):  
Binglun Yin ◽  
Huina Mao ◽  
Shaoxing Qu
Keyword(s):  
Thin Films ◽  
Field Study ◽  
Phase Field ◽  
Scaling Law ◽  
Ferroelectric Thin Films ◽  
Free Standing

Phase field study on the effect of substrate elasticity on tip-force-induced domain switching in ferroelectric thin films

2021 ◽  
Vol 129 (24) ◽  
pp. 244105
Author(s):  
Jingyuan Li ◽  
Weiming Xiong ◽  
Xiang Huang ◽  
Weijin Chen ◽  
Yue Zheng
Keyword(s):  
Thin Films ◽  
Field Study ◽  
Phase Field ◽  
Domain Switching ◽  
Ferroelectric Thin Films ◽  
Substrate Elasticity

Phase-Field Simulation of Domain Structure Evolution in Ferroelectric Thin Films

2000 ◽  
Vol 652 ◽  
Author(s):  
Y. L. Li ◽  
S. Y. Hu ◽  
Z. K. Liu ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Domain Wall ◽  
Domain Structure ◽  
Phase Field ◽  
Field Model ◽  
Phase Field Model ◽  
Ferroelectric Thin Films ◽  
Structure Evolution ◽  
Field Simulation

ABSTRACTA phase-field model for predicting the domain structure evolution in constrained ferroelectric thin films is developed. It employs an analytical elastic solution derived for a constrained film with arbitrary eigenstrain distributions. In particular, the model is applied to the domain structure evolution during a cubic→tetragonal proper ferro- electric phase transition. The effect of substrate constraint on the volume fractions of domain variants, domain-wall orientations, and domain shapes is studied. It is shown that the predicted results agree very well with existing experimental observations in ferroelectric thin films.

Controlling domain wall motion in ferroelectric thin films

2015 ◽  
Vol 10 (2) ◽  
pp. 145-150 ◽  
Author(s):  
L. J. McGilly ◽  
P. Yudin ◽  
L. Feigl ◽  
A. K. Tagantsev ◽  
N. Setter
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Ferroelectric Thin Films

Reversible and irreversible domain wall contributions to the polarization in ferroelectric thin films

1999 ◽  
Vol 221 (1) ◽  
pp. 251-257 ◽  
Author(s):  
Dierk Bolten ◽  
Oliver Lohse ◽  
Michael Grossmann ◽  
Rainer Waser
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Ferroelectric Thin Films

Priority of domain wall pinning during the fatigue period in bismuth titanate ferroelectric thin films

2005 ◽  
Vol 86 (19) ◽  
pp. 192908 ◽  
Author(s):  
Wei Li ◽  
Aiping Chen ◽  
Xiaomei Lu ◽  
Jinsong Zhu ◽  
Yening Wang
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Bismuth Titanate ◽  
Ferroelectric Thin Films ◽  
Domain Wall Pinning
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