Mapping the evolution of Bi/Ge(111) empty states: From the wetting layer to pseudo-cubic islands

2021 ◽  
Vol 129 (15) ◽  
pp. 155310
Author(s):  
F. Goto ◽  
A. Calloni ◽  
G. Albani ◽  
A. Picone ◽  
A. Brambilla ◽  
...  
Keyword(s):  
Wetting Layer

Control over the preferred orientation of CIGS films deposited by magnetron sputtering using a wetting layer

2016 ◽  
Vol 12 (1) ◽  
pp. 59-66 ◽  
Author(s):  
Yong Yan ◽  
Fan Jiang ◽  
Lian Liu ◽  
Zhou Yu ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Preferred Orientation ◽  
Wetting Layer

scholarly journals Improved Metal Oxide Electrode for CIGS Solar Cells: The Application of an AgOX Wetting Layer

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Nils Neugebohrn ◽  
Norbert Osterthun ◽  
Maximilian Götz-Köhler ◽  
Kai Gehrke ◽  
Carsten Agert
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Metal Oxide ◽  
Metal Layer ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Thin Film Solar Cells ◽  
Wetting Layer ◽  
Transparent Conductive Oxides ◽  
Effective Measure

AbstractOxide/metal/oxide (OMO) layer stacks are used to replace transparent conductive oxides as front contact of thin-film solar cells. These multilayer structures not only reduce the overall thickness of the contact, but can be used for colouring of the cells utilizing interference effects. However, sheet resistance and parasitic absorption, both of which depend heavily on the metal layer, should be further reduced to reach higher efficiencies in the solar cells. In this publication, AgOX wetting layers were applied to OMO electrodes to improve the performance of Cu(In,Ga)Se2 (CIGS) thin-film solar cells. We show that an AgOX wetting layer is an effective measure to increase transmission and conductivity of the multilayer electrode. With the presented approach, we were able to improve the short-circuit current density by 18% from 28.8 to 33.9 mA/cm2 with a metal (Ag) film thickness as low as 6 nm. Our results highlight that OMO electrodes can be an effective replacement for conventional transparent conductive oxides like aluminium-doped zinc oxide on thin-film solar cells.

Pretransitional thinning of a polymer wetting layer

1998 ◽  
Vol 44 (2) ◽  
pp. 180-185 ◽  
Author(s):  
J Genzer ◽  
E. J Kramer
Keyword(s):  
Wetting Layer

Interface engineered wetting-layer-free InAs quantum dots on GaAs(001)

2015 ◽  
Author(s):  
Manori V. Gunasekera ◽  
Dinghao Tang ◽  
Irene Rusakova ◽  
David J. Smith ◽  
Alexandre Freundlich
Keyword(s):  
Quantum Dots ◽  
Wetting Layer ◽  
Inas Quantum Dots

InAs wetting layer evolution on GaAs(001)

2005 ◽  
Vol 580 (1-3) ◽  
pp. 30-38 ◽  
Author(s):  
M.C. Xu ◽  
Y. Temko ◽  
T. Suzuki ◽  
K. Jacobi
Keyword(s):  
Wetting Layer

Wetting layer states in low density InAs/InGaAs quantum dots from sub-critical InAs coverages

2013 ◽  
Vol 46 (31) ◽  
pp. 315101 ◽  
Author(s):  
L Seravalli ◽  
G Trevisi ◽  
P Frigeri ◽  
F Rossi ◽  
E Buffagni ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Density ◽  
Wetting Layer

scholarly journals Wetting layer states of InAs∕GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer

2007 ◽  
Vol 101 (6) ◽  
pp. 063539 ◽  
Author(s):  
G. Sęk ◽  
K. Ryczko ◽  
M. Motyka ◽  
J. Andrzejewski ◽  
K. Wysocka ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Wetting Layer ◽  
Capping Layer ◽  
Self Assembled

scholarly journals The actin cortex as an active wetting layer

2013 ◽  
Vol 36 (5) ◽  
Author(s):  
J. -F. Joanny ◽  
K. Kruse ◽  
J. Prost ◽  
S. Ramaswamy
Keyword(s):  
Wetting Layer ◽  
Actin Cortex

scholarly journals 1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Henning Fouckhardt ◽  
Johannes Strassner ◽  
Thomas H. Loeber ◽  
Christoph Doering
Keyword(s):  
Gaas Substrate ◽  
Semiconductor Quantum Dots ◽  
Ex Situ ◽  
Difference Spectroscopy ◽  
Wetting Layer ◽  
Reflectance Anisotropy ◽  
Atomic Force ◽  
Monitoring Technique ◽  
Scientific Dispute

III/V semiconductor quantum dots (QD) are in the focus of optoelectronics research for about 25 years now. Most of the work has been done on InAs QD on GaAs substrate. But, e.g., Ga(As)Sb (antimonide) QD on GaAs substrate/buffer have also gained attention for the last 12 years. There is a scientific dispute on whether there is a wetting layer before antimonide QD formation, as commonly expected for Stransky-Krastanov growth, or not. Usually ex situ photoluminescence (PL) and atomic force microscope (AFM) measurements are performed to resolve similar issues. In this contribution, we show that reflectance anisotropy/difference spectroscopy (RAS/RDS) can be used for the same purpose as an in situ, real-time monitoring technique. It can be employed not only to identify QD growth via a distinct RAS spectrum, but also to get information on the existence of a wetting layer and its thickness. The data suggest that for antimonide QD growth the wetting layer has a thickness of 1 ML (one monolayer) only.

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