scholarly journals Wetting layer states of InAs∕GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer

2007 ◽  
Vol 101 (6) ◽  
pp. 063539 ◽  
Author(s):  
G. Sęk ◽  
K. Ryczko ◽  
M. Motyka ◽  
J. Andrzejewski ◽  
K. Wysocka ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Wetting Layer ◽  
Capping Layer ◽  
Self Assembled

Dynamics of the wetting-Layer-quantum-dot interaction in InGaAs self-assembled systems

2005 ◽  
Vol 41 (3) ◽  
pp. 344-350 ◽  
Author(s):  
D.R. Matthews ◽  
H.D. Summers ◽  
P.M. Smowton ◽  
P. Blood ◽  
P. Rees ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Wetting Layer ◽  
Self Assembled

scholarly journals STUDY OF SELF-ASSEMBLED InAs QUANTUM DOT STRUCTURE COVERED BY InxGa1-xAs(0≤x≤0.3) CAPPING LAYER

2000 ◽  
Vol 49 (11) ◽  
pp. 2230
Author(s):  
WANG XIAO-DONG ◽  
LIU HUI-YUN ◽  
NIU ZHI-CHUAN ◽  
FENG SONG-LIN
Keyword(s):  
Quantum Dot ◽  
Capping Layer ◽  
Self Assembled ◽  
Inas Quantum Dot

Structural and Optical Effects of Capping Layer Material and Growth Rate on the Properties of Self-Assembled InAs Quantum Dot Structures

2004 ◽  
Vol 829 ◽  
Author(s):  
Gabriel Agnello ◽  
Vadim Tokranov ◽  
Michael Yakimov ◽  
Matthew Lamberti ◽  
Yuegui Zheng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Properties ◽  
Layer Growth ◽  
Wetting Layer ◽  
Capping Layer ◽  
Layer Material ◽  
Material Choice ◽  
Electronic Performance ◽  
Self Assembled ◽  
Inas Quantum Dot

ABSTRACTIn order to develop nanoengineering methods to control electronic spectrum of self-assembled InAs quantum dots (QDs) grown by molecular beam epitaxy, we have utilized atomic force microscopy (AFM), photoluminescence (PL) and TEM methods to investigate the effects of capping layer growth on the physical/chemical properties as well as the optical/electronic performance of QD device structures. Capping layer material choice (or its absence all together) has been found to directly influence QD dimensions (size, height), and subsequently, to affect QD emission wavelength. We report results of QD lateral size and height as well as densities of InAs QDs capped with 2ML (monolayers) of AlAs or GaAs grown at various rates. Our AFM results are complemented by PL measurements, where the optical properties of capped versus non-capped QDs have been explored and direct correspondence between structural differences induced by capping and the electronic/optical properties of QDs is demonstrated. Analysis of the data shows that the results can be explained by two competing surface processes. The first of which is the redistribution of indium between QDs on top of the 2D wetting layer, resulting in the increase of QD size with time. The second effect is the diffusion of indium out of the QDs and onto the top of the capping layer. TEM with multislice image simulation has supported our AFM and PL observations with the demonstration of “indium driven” alloy intermixing in the overlayer as well as significant alloying in the InAs wetting layer.

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