Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement

2021 ◽  
Vol 118 (13) ◽  
pp. 133503
Author(s):  
David Z. Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sam A. Keo ◽  
Anita M. Fisher ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Infrared Detectors ◽  
Efficiency Enhancement ◽  
Long Wavelength ◽  
P Type

p-type HgTe/CdTe superlattices for very-long wavelength infrared detectors

2006 ◽  
Vol 35 (6) ◽  
pp. 1341-1345 ◽  
Author(s):  
H. S. Jung ◽  
P. Boieriu ◽  
C. H. Grein
Keyword(s):  
Infrared Detectors ◽  
Long Wavelength ◽  
P Type ◽  
Long Wavelength Infrared

scholarly journals High-Performance Anodic Vulcanization-Pretreated Gated P+–π–M–N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Ju Sun ◽  
Nong Li ◽  
Qing-Xuan Jia ◽  
Xuan Zhang ◽  
Dong-Wei Jiang ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Bias Voltage ◽  
Infrared Detectors ◽  
Infrared Detector ◽  
Electrical Performance ◽  
Cutoff Wavelength ◽  
Gate Electrode ◽  
Long Wavelength ◽  
Specific Detectivity ◽  
Long Wavelength Infrared

AbstractThe InAs/GaSb superlattice infrared detector has been developed with tremendous effort. However, the performance of it, especially long-wavelength infrared detectors (LWIR), is still limited by the electrical performance and optical quantum efficiency (QE). Forcing the active region to be p-type through proper doping can highly improve QE, and the gating technique can be employed to greatly enhance electrical performance. However, the saturation bias voltage is too high. Reducing the saturation bias voltage has broad prospects for the future application of gate voltage control devices. In this paper, we report that the gated P+–π–M–N+ InAs/GaSb superlattice long-wavelength infrared detectors exhibit different π region doping levels that have a reduced minimum saturation bias at − 10 V with a 200-nm SiO2 layer after a simple and effective anodic vulcanization pretreatment. The saturation gate bias voltage is much lower than − 40 V that reported with the same thickness of a 200-nm SiO2 passivation layer and similar structure. The optical and electrical characterization indicates that the electrical and optical performance of the device would be weakened by excessive doping concentration. At 77 K, the 50% cutoff wavelength of the device is about 8 µm, the 100% cutoff wavelength is 10 µm, the maximum quantum efficiency is 62.4%, the maximum of responsivity is 2.26 A/W at 5 µm, and the maximum RA of the device is 1259.4 Ω cm2. Besides, the specific detectivity of Be 780 °C-doped detector without gate electrode exhibits a peak of 5.6 × 1010 cm Hz1/2/W at 5 µm with a 70-mv reverse bias voltage, which is more than three times that of Be 820 °C-doped detector. Moreover, the peak specific detectivity could be further increased to 1.3 × 1011 cm Hz1/2/W at 5 µm with a 10-mv reserve bias voltage that has the bias of − 10 V at the gate electrode.

Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

1995 ◽  
Vol 78 (12) ◽  
pp. 7143-7152 ◽  
Author(s):  
C. H. Grein ◽  
P. M. Young ◽  
M. E. Flatté ◽  
H. Ehrenreich
Keyword(s):  
Infrared Detectors ◽  
Long Wavelength ◽  
Carrier Lifetimes

Tuning In0.3Ga0.7As∕GaAs multiple quantum dots for long-wavelength infrared detectors

2004 ◽  
Vol 85 (6) ◽  
pp. 1003-1005 ◽  
Author(s):  
Ying Chao Chua ◽  
E. A. Decuir ◽  
B. S. Passmore ◽  
K. H. Sharif ◽  
M. O. Manasreh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Detectors ◽  
Multiple Quantum ◽  
Long Wavelength ◽  
Long Wavelength Infrared
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