Effect of ZnO cap layer deposition environment on thermal stability of the electrical properties of Al-doped ZnO films

2021 ◽  
Vol 129 (19) ◽  
pp. 195105
Author(s):  
Yufeng Zhang ◽  
Ziqi Fei ◽  
Huang Huang ◽  
Xue-ao Zhang ◽  
Rui Mu
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Zno Films ◽  
Layer Deposition ◽  
Cap Layer ◽  
Doped Zno ◽  
Thermal Stability Of

Influence of ZnO Cap Layer Morphology on the Electrical Properties and Thermal Stability of Al‐Doped ZnO Films

2020 ◽  
Vol 217 (16) ◽  
pp. 2000025
Author(s):  
Yufeng Zhang ◽  
Ziqi Fei ◽  
Huang Huang ◽  
Tieyu Lü ◽  
Rui Mu
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Zno Films ◽  
Cap Layer ◽  
Doped Zno ◽  
Thermal Stability Of

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

Analysis of the improved thermal stability of Al-doped ZnO-adopted organic solar cells

2021 ◽  
Vol 118 (2) ◽  
pp. 023302
Author(s):  
Jaehoon Kim ◽  
Yeonkyung Lee ◽  
Jun Young Kim ◽  
Hyung-Jun Song ◽  
Jiyun Song ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Solar Cells ◽  
Organic Solar Cells ◽  
Doped Zno ◽  
Thermal Stability Of

Effects of SiO2 interlayer on electrical properties of Al-doped ZnO films under bending stress

2012 ◽  
Vol 8 (4) ◽  
pp. 375-379 ◽  
Author(s):  
Young Soo Lim ◽  
Seul Gi Seo ◽  
Bo Bae Kim ◽  
Hyoung-Seuk Choi ◽  
Won-Seon Seo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Zno Films ◽  
Bending Stress ◽  
Doped Zno

Thermal stability of MgO film on Si grown by atomic layer deposition using Mg(EtCp)2 and H2O

2021 ◽  
Author(s):  
Changyu Park ◽  
Changmin Lee ◽  
Woohui Lee ◽  
Jehoon Lee ◽  
Jinyong Kim ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Thermal Stability Of
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