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Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications
Journal of Applied Physics
◽
10.1063/5.0045952
◽
2021
◽
Vol 130
(7)
◽
pp. 075702
Author(s):
Nayana Remesh
◽
Hareesh Chandrasekar
◽
Anirudh Venugopalrao
◽
Srinivasan Raghavan
◽
Muralidharan Rangarajan
◽
...
Keyword(s):
High Voltage
◽
Transition Layers
◽
Gan Hemt
Download Full-text
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Current Collapseless High-Voltage GaN-HEMT and its 50-W Boost Converter Operation
2007 IEEE International Electron Devices Meeting
◽
10.1109/iedm.2007.4419087
◽
2007
◽
Cited By ~ 11
Author(s):
Wataru Saito
◽
Masahiko Kuraguchi
◽
Yoshiharu Takada
◽
Kunio Tsuda
◽
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◽
...
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◽
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◽
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Loss Characterization and Analysis of High Voltage E-mode GaN HEMT in Soft-switching Application
2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
◽
10.1109/wipda.2018.8569189
◽
2018
◽
Cited By ~ 2
Author(s):
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◽
Ziwei Yu
◽
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Keyword(s):
High Voltage
◽
Soft Switching
◽
Gan Hemt
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Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
IEEE Transactions on Electron Devices
◽
10.1109/ted.2005.862708
◽
2006
◽
Vol 53
(2)
◽
pp. 356-362
◽
Cited By ~ 310
Author(s):
W. Saito
◽
Y. Takada
◽
M. Kuraguchi
◽
K. Tsuda
◽
I. Omura
Keyword(s):
Power Electronics
◽
High Voltage
◽
Structure Approach
◽
Gan Hemt
◽
Gate Structure
◽
Recessed Gate
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High-voltage GaN HEMT evaluation in micro-inverter applications
2015 IEEE Applied Power Electronics Conference and Exposition (APEC)
◽
10.1109/apec.2015.7104696
◽
2015
◽
Cited By ~ 8
Author(s):
Chung-Yi Lin
◽
Yu-Chen Liu
◽
Jih-Sheng Lai
◽
Baifeng Chen
Keyword(s):
High Voltage
◽
Gan Hemt
◽
Micro Inverter
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A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications
IEEE Transactions on Power Electronics
◽
10.1109/tpel.2020.2971789
◽
2020
◽
Vol 35
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◽
pp. 9669-9679
◽
Cited By ~ 3
Author(s):
Gang Lyu
◽
Yuru Wang
◽
Jin Wei
◽
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◽
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Keyword(s):
High Voltage
◽
High Frequency
◽
Gan Hemt
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Investigation on the Long-Term Reliability of High-Voltage p-GaN HEMT by Repetitively Transient Overcurrent
IEEE Transactions on Electron Devices
◽
10.1109/ted.2018.2873802
◽
2018
◽
Vol 65
(12)
◽
pp. 5322-5328
◽
Cited By ~ 9
Author(s):
Yijun Shi
◽
Wanjun Chen
◽
Xingtao Cui
◽
Maoling Li
◽
Chao Liu
◽
...
Keyword(s):
High Voltage
◽
Gan Hemt
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A Dual Gate AlGaN/GaN HEMT For High Voltage Switching Applications
10.7567/ssdm.2004.d-5-4
◽
2004
◽
Author(s):
Min-Woo Ha
◽
Seung-Chul Lee
◽
Jin-Cherl Her
◽
Kwang-Seok Seo
◽
Min-Koo Han
Keyword(s):
High Voltage
◽
Gan Hemt
◽
Dual Gate
◽
Voltage Switching
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On-Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage
IEEE Electron Device Letters
◽
10.1109/led.2007.901665
◽
2007
◽
Vol 28
(8)
◽
pp. 676-678
◽
Cited By ~ 33
Author(s):
W. Saito
◽
T. Nitta
◽
Y. Kakiuchi
◽
Y. Saito
◽
K. Tsuda
◽
...
Keyword(s):
High Voltage
◽
Sapphire Substrate
◽
Applied Voltage
◽
Gan Hemt
◽
Resistance Modulation
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Evaluation of high-voltage cascode GaN HEMT in different packages
2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014
◽
10.1109/apec.2014.6803305
◽
2014
◽
Cited By ~ 27
Author(s):
Zhengyang Liu
◽
Xiucheng Huang
◽
Wenli Zhang
◽
Fred C. Lee
◽
Qiang Li
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High Voltage
◽
Gan Hemt
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Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT
IEEE Transactions on Power Electronics
◽
10.1109/tpel.2013.2264941
◽
2014
◽
Vol 29
(4)
◽
pp. 1977-1985
◽
Cited By ~ 165
Author(s):
Zhengyang Liu
◽
Xiucheng Huang
◽
Fred C. Lee
◽
Qiang Li
Keyword(s):
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◽
High Voltage
◽
Model Development
◽
Parasitic Inductance
◽
Gan Hemt
◽
Inductance Extraction
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