On-Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage

2007 ◽  
Vol 28 (8) ◽  
pp. 676-678 ◽  
Author(s):  
W. Saito ◽  
T. Nitta ◽  
Y. Kakiuchi ◽  
Y. Saito ◽  
K. Tsuda ◽  
...  
Keyword(s):  
High Voltage ◽  
Sapphire Substrate ◽  
Applied Voltage ◽  
Gan Hemt ◽  
Resistance Modulation

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

2003 ◽  
Vol 200 (1) ◽  
pp. 187-190 ◽  
Author(s):  
Hideyuki Okita ◽  
Katsuaki Kaifu ◽  
Juro Mita ◽  
Tomoyuki Yamada ◽  
Yoshiaki Sano ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Gan Hemt ◽  
High Transconductance ◽  
Recessed Gate

A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate

2011 ◽  
Vol 32 (12) ◽  
pp. 124003 ◽  
Author(s):  
Bo Liu ◽  
Zhihong Feng ◽  
Sen Zhang ◽  
Shaobo Dun ◽  
Jiayun Yin ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
Sapphire Substrate ◽  
Gan Hemt

Current Collapseless High-Voltage GaN-HEMT and its 50-W Boost Converter Operation

2007 ◽  
Author(s):  
Wataru Saito ◽  
Masahiko Kuraguchi ◽  
Yoshiharu Takada ◽  
Kunio Tsuda ◽  
Yasunobu Saito ◽  
...  
Keyword(s):  
High Voltage ◽  
Boost Converter ◽  
Gan Hemt

Low Specific On-Resistance AlGaN/GaN HEMT on Sapphire Substrate

2006 ◽  
Author(s):  
M. Inada ◽  
S. Yagi ◽  
Y. Yamamoto ◽  
Guanxi Piao ◽  
M. Shimizu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Gan Hemt

scholarly journals AlGaN/GaN HEMT with 200 GHz fmax on sapphire substrate with InGaN back-barrier

2012 ◽  
Vol 30 (4) ◽  
pp. 289-292 ◽  
Author(s):  
Guo-Guo LIU ◽  
Ke WEI ◽  
Jun HUANG ◽  
Xin-Yu LIU ◽  
Jie-Bin NIU
Keyword(s):  
Sapphire Substrate ◽  
Gan Hemt

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

2020 ◽  
Vol 35 (9) ◽  
pp. 9669-9679 ◽  
Author(s):  
Gang Lyu ◽  
Yuru Wang ◽  
Jin Wei ◽  
Zheyang Zheng ◽  
Jiahui Sun ◽  
...  
Keyword(s):  
High Voltage ◽  
High Frequency ◽  
Gan Hemt
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