scholarly journals Photoconductive gain in single crystal diamond detectors

2021 ◽  
Vol 129 (12) ◽  
pp. 124502
Author(s):  
Theodor Grünwald ◽  
Matthias Schreck
Keyword(s):  
Single Crystal ◽  
Photoconductive Gain ◽  
Single Crystal Diamond

scholarly journals Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD

2021 ◽  
Vol 1 (1) ◽  
pp. 143-149
Author(s):  
Wei Cao ◽  
Deng Gao ◽  
Hongyang Zhao ◽  
Zhibin Ma
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Lateral Growth ◽  
Single Crystal Diamond

On The Optimized Nucleation of Near-Single-Crystal Cvd Diamond Film

1995 ◽  
Vol 416 ◽  
Author(s):  
L. C. Chen ◽  
C. C. Juan ◽  
J. Y. Wu ◽  
K. H. Chen ◽  
J. W. Teng
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Morphological Evolution ◽  
Present Report ◽  
Ex Situ ◽  
Nucleation Density ◽  
Induced Current ◽  
Current Time ◽  
Single Crystal Diamond

ABSTRACTNear-single-crystal diamond films have been obtained in a number of laboratories recently. The optimization of nucleation density by using a bias-enhanced nucleation (BEN) method is believed to be a critical step. However, the condition of optimized nucleation has never been clearly delineated. In the present report, a novel quantitative technique was established to monitor the nucleation of diamond in-situ. Specifically, the induced current was measured as a function of nucleation time during BEN. The timedependence of induced current was studied under various methane concentrations as well as substrate temperatures. The optimized nucleation condition can be unambiguously determined from the current-time plot. Besides the in-situ current probe, ex-situ x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were also used to investigate the chemical and morphological evolution. Characteristic XPS and AFM features of optimized nucleation is discussed.

Development of Diamond-Based X-ray Detection for High Flux Beamline Diagnostics

2009 ◽  
Vol 1203 ◽  
Author(s):  
Jen Bohon ◽  
John Smedley ◽  
Erik M. Muller ◽  
Jeffrey W. Keister
Keyword(s):  
Single Crystal ◽  
Linear Response ◽  
Voltage Dependence ◽  
Cvd Diamond ◽  
High Flux ◽  
National Synchrotron Light Source ◽  
X Ray ◽  
Single Crystal Diamond ◽  
Synchrotron Light ◽  
Pulse Structure

AbstractHigh quality single crystal and polycrystalline CVD diamond detectors with platinum contacts have been tested at the white beam X28C beamline at the National Synchrotron Light Source under high-flux conditions. The voltage dependence of these devices has been measured under DC and pulsed-bias conditions, establishing the presence or absence of photoconductive gain in each device. Linear response has been achieved over eleven orders of magnitude when combined with previous low flux studies. Temporal measurements with single crystal diamond detectors have resolved the ns scale pulse structure of the NSLS.

Thermal conductivity of isotopically modified single crystal diamond

1993 ◽  
Vol 70 (24) ◽  
pp. 3764-3767 ◽  
Author(s):  
Lanhua Wei ◽  
P. K. Kuo ◽  
R. L. Thomas ◽  
T. R. Anthony ◽  
W. F. Banholzer
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
Single Crystal Diamond

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

A novel slurry for chemical mechanical polishing of single crystal diamond

2021 ◽  
pp. 150431
Author(s):  
Longxing Liao ◽  
Zhenyu Zhang ◽  
Fanning Meng ◽  
Dongdong Liu ◽  
Bin Wu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Single Crystal Diamond

Electronic Impact of Inclusions in Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Erik M. Muller ◽  
John Smedley ◽  
Balaji Raghothamachar ◽  
Mengjia Gaowei ◽  
Jeffrey W. Keister ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Secondary Phase ◽  
Surface Region ◽  
Phase Region ◽  
Electron Trapping ◽  
Near Surface ◽  
X Ray ◽  
Photoconductive Gain ◽  
Single Crystal Diamond ◽  
Topography Data

AbstractX-ray topography data are compared with photodiode responsivity maps to identify potential candidates for electron trapping in high purity, single crystal diamond. X-ray topography data reveal the defects that exist in the diamond material, which are dominated by non-electrically active linear dislocations. However, many diamonds also contain defects configurations (groups of threading dislocations originating from a secondary phase region or inclusion) in the bulk of the wafer which map well to regions of photoconductive gain, indicating that these inclusions are a source of electron trapping which affect the performance of diamond X-ray detectors. It was determined that photoconductive gain is only possible with the combination of an injecting contact and charge trapping in the near surface region. Typical photoconductive gain regions are 0.2 mm across; away from these near-surface inclusions the device yields the expected diode responsivity.

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