Cation effect of inorganic salts on ionic Seebeck coefficient

2021 ◽  
Vol 118 (10) ◽  
pp. 103902
Author(s):  
Yue Shu ◽  
George Omololu Odunmbaku ◽  
Yongjie He ◽  
Yongli Zhou ◽  
Hanlin Cheng ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Inorganic Salts ◽  
Cation Effect

Depression of freezing temperature of water and water solutions in porous materials

1989 ◽  
Vol 54 (10) ◽  
pp. 2644-2647 ◽  
Author(s):  
Petr Schneider ◽  
Jiří Rathouský
Keyword(s):  
Water Vapor ◽  
Porous Materials ◽  
Inorganic Salt ◽  
Freezing Point ◽  
Freezing Temperature ◽  
Inorganic Salts ◽  
Freezing Point Depression ◽  
Salt Solutions ◽  
Water Solutions

In porous materials filled with water or water solutions of inorganic salts, water freezes at lower temperatures than under normal conditions; the reason is the decrease of water vapor tension above the convex meniscus of liquid in pores. The freezing point depression is not very significant in pores with radii from 0.05 μm to 10 μm (about 0.01-2.5 K). Only in smaller pores, especially when filled with inorganic salt solutions, this depression is important.

Chemoselectivity in Cyclosiloxanolate Cluster Formation: An Alkali Cation Effect?

2000 ◽  
Vol 2000 (6) ◽  
pp. 1327-1331 ◽  
Author(s):  
Claudia Zucchi ◽  
Manuela Mattioli ◽  
Giovanna Gavioli ◽  
Massimo Moret ◽  
Angelo Sironi ◽  
...  
Keyword(s):  
Cluster Formation ◽  
Alkali Cation ◽  
Cation Effect

scholarly journals INORGANIC SALTS IN NUTRITION

1934 ◽  
Vol 107 (3) ◽  
pp. 689-695 ◽  
Author(s):  
Amos E. Light ◽  
Paul K. Smith ◽  
Arthur H. Smith ◽  
William E. Anderson
Keyword(s):  
Inorganic Salts

High Positive Seebeck Coefficient of Aqueous I–/I3– Thermocells Based on Host–Guest Interactions and LCST Behavior of PEGylated α-Cyclodextrin

2021 ◽  
Author(s):  
Yimin Liang ◽  
Joseph Ka-Ho Hui ◽  
Masa-aki Morikawa ◽  
Hirotaka Inoue ◽  
Teppei Yamada ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Lcst Behavior

scholarly journals Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yijie Li ◽  
Nguyen Van Toan ◽  
Zhuqing Wang ◽  
Khairul Fadzli Bin Samat ◽  
Takahito Ono
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Contact Resistance ◽  
Power Factor ◽  
Chemical Etching ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates ◽  
Output Performance ◽  
Metal Assisted Chemical Etching

AbstractPorous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact between porous Si and metal is one reason for the reduction of electrical conductivity. In this paper, p- and n-type porous Si were formed on Si substrate by metal-assisted chemical etching. To decrease contact resistance, p- and n-type spin on dopants are employed to dope an impurity element into p- and n-type porous Si surface, respectively. Compared to the Si substrate with undoped porous samples, ohmic contact can be obtained, and the electrical conductivity of doped p- and n-type porous Si can be improved to 1160 and 1390 S/m, respectively. Compared with the Si substrate, the special contact resistances for the doped p- and n-type porous Si layer decreases to 1.35 and 1.16 mΩ/cm2, respectively, by increasing the carrier concentration. However, the increase of the carrier concentration induces the decline of the Seebeck coefficient for p- and n-type Si substrates with doped porous Si samples to 491 and 480 μV/K, respectively. Power factor is related to the Seebeck coefficient and electrical conductivity of thermoelectric material, which is one vital factor that evaluates its output performance. Therefore, even though the Seebeck coefficient values of Si substrates with doped porous Si samples decrease, the doped porous Si layer can improve the power factor compared to undoped samples due to the enhancement of electrical conductivity, which facilitates its development for thermoelectric application.

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