Mechanism of non-Ohmic conduction in a single Y3Fe5O12 nanofiber

2021 ◽  
Vol 118 (15) ◽  
pp. 153101
Author(s):  
Pengcheng Du ◽  
Peng Zhou ◽  
Nannan Liu ◽  
Yajun Qi ◽  
Tianjin Zhang
Keyword(s):  
Ohmic Conduction

Conduction Characteristics of Charge Ordering Type Ferroelectrics,YFe2O4

2006 ◽  
Vol 966 ◽  
Author(s):  
Ken Imamura ◽  
Yoichi Horibe ◽  
Takeshi Yoshimura ◽  
Norifumi Fujimura ◽  
Shigeo Mori ◽  
...  
Keyword(s):  
Room Temperature ◽  
Inflection Point ◽  
Oxygen Deficiency ◽  
Complex Impedance ◽  
Charge Ordering ◽  
Neel Temperature ◽  
Ohmic Conduction ◽  
Néel Temperature ◽  
Impedance Measurements ◽  
Conduction Properties

ABSTRACTElectrical conduction properties of charge ordering type ferroelectrics YFe2O4 were investigated. YFe2O4 was synthesized in reduced atmosphere at 1200 °C. Oxygen partial pressure of the reduced atmosphere was controlled by the equilibrium state of CO and CO2. YFe2O4 is paramagnetic at room temperature and has Néel temperature around 250K. The Néel temperature was decreased with increasing the amount of oxygen deficiency. Moreover, YFe2O4 showed ohmic conduction from 260 to 100 K. The temperature dependence of the DC conductivity showed an inflection point at the Néel temperature, which indicated the development of charge ordering of Fe2+ and Fe3+ ions. From the complex impedance measurements, the equivalent circuits of YFe2O4 with different oxygen deficiency were determined at various temperatures.

Non-ohmic conduction in sodium bismuth titanate: the influence of oxide-ion conduction

2020 ◽  
Vol 22 (36) ◽  
pp. 20941-20950
Author(s):  
F. Yang ◽  
A. R. West ◽  
D. C. Sinclair
Keyword(s):  
Bismuth Titanate ◽  
Critical Role ◽  
Ohmic Conduction ◽  
Conductivity Enhancement ◽  
Oxygen Ions ◽  
Maximum Conductivity ◽  
Dc Bias ◽  
Oxide Ion Conduction ◽  
Oxide Ion ◽  
Mobile Oxygen

A maximum conductivity enhancement of >2000% is achieved in Na0.5Bi0.51TiO3.015 under a small dc bias, in which the highly mobile oxygen ions and the electrode reactions play a critical role.

Non-Ohmic conduction in exfoliated La0.7Ca0.3MnO3 thin films

2020 ◽  
Vol 116 (2) ◽  
pp. 022401 ◽  
Author(s):  
Jungsik Park ◽  
Jae Hoon Shin ◽  
Kyung Song ◽  
Yong-Jin Kim ◽  
Han-Byul Jang ◽  
...  
Keyword(s):  
Thin Films ◽  
Ohmic Conduction

scholarly journals Non-ohmic conduction in doped polyacetylene at low temperatures

1986 ◽  
Vol 64 (1) ◽  
pp. 19-23 ◽  
Author(s):  
H. Chaabane ◽  
E. Ettlinger ◽  
W. Schoepe
Keyword(s):  
Low Temperatures ◽  
Ohmic Conduction

Non-Ohmic Conduction in Vacuum-Deposited SiO Films

1965 ◽  
Vol 4 (9) ◽  
pp. 639-644 ◽  
Author(s):  
Hidenori Hirose ◽  
Yasaku Wada
Keyword(s):  
Ohmic Conduction

Investigation of Switching Phenomenon in Metal-Tantalum Oxide Interface

2015 ◽  
Vol 15 (10) ◽  
pp. 7564-7568 ◽  
Author(s):  
Abbas Yawar ◽  
Mi Ra Park ◽  
Quanli Hu ◽  
Woo Jin Song ◽  
Tae-Sik Yoon ◽  
...  
Keyword(s):  
Low Voltage ◽  
Tantalum Oxide ◽  
High Resistance State ◽  
Amorphous Layer ◽  
Memory Device ◽  
Ohmic Conduction ◽  
Oxide Interface ◽  
Bipolar Switching ◽  
Switching Phenomenon ◽  
Resistance State

To investigate the nature of the switching phenomenon at the metal-tantalum oxide interface, we fabricated a memory device in which a tantalum oxide amorphous layer acted as a switching medium. Different metals were deposited on top of the tantalum oxide layer to ensure that they will react with some of the oxygen contents already present in the amorphous layer of the tantalum oxide. This will cause the formation of metal oxide (MOx) at the interface. Two devices with Ti and Cu as the top electrodes were fabricated for this purpose. Both devices showed bipolar switching characteristics. The SET and RESET voltages for the Ti top electrode device were ∼+1.7 V and ∼−2 V, respectively, whereas the SET and RESET voltages for the Cu top electrode device were ∼+0.9 V and ∼−0.9 V, respectively. In the high-resistance state (HRS) conduction, the mechanisms involved in the devices with Ti and Cu top electrodes were space-charge limited conduction (SCLC) and ohmic, respectively. On the other hand, in the low-resistance state (LRS), the Ti top electrode device undergoes SCLC at a high voltage and ohmic conduction at a low voltage, and the Cu top electrode again undergoes ohmic conduction. From the consecutive sweep cycles, it was observed that the SET voltage gradually decreased with the sweeps for the Cu top electrode device, whereas for the Ti top electrode device, the set voltage did not vary with the sweeps.

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