Non-Ohmic conduction in exfoliated La0.7Ca0.3MnO3 thin films

2020 ◽  
Vol 116 (2) ◽  
pp. 022401 ◽  
Author(s):  
Jungsik Park ◽  
Jae Hoon Shin ◽  
Kyung Song ◽  
Yong-Jin Kim ◽  
Han-Byul Jang ◽  
...  
Keyword(s):  
Thin Films ◽  
Ohmic Conduction

SYSTEMATIC EXPLORATION OF THE EFFECTS OF CR-DOPING ON MICROSTRUCTURE, INSULATING, AND FERROELECTRIC PROPERTIES OF BiFeO3 THIN FILM

2019 ◽  
Vol 26 (03) ◽  
pp. 1850166 ◽  
Author(s):  
HUITING SUI ◽  
HUAJUN SUN ◽  
XIAOFANG LIU ◽  
SHANSHAN GUO ◽  
HUAN YANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Leakage Current ◽  
Remanent Polarization ◽  
Fatigue Behavior ◽  
Ferroelectric Properties ◽  
Ohmic Conduction ◽  
Si Substrate ◽  
Systematic Exploration ◽  
Cr Doping

BiFe[Formula: see text]CrxO3 ([Formula: see text]BFCO, [Formula: see text], 0.02, 0.03, 0.04, 0.05) thin films were successfully fabricated onto Pt(111)/TiO2/SiO2/Si substrate via a solgel process. The correlation between microstructure and insulating, ferroelectric properties of [Formula: see text]BFCO thin films are investigated. The leakage behavior for all the thin films is in accordance with the Ohmic conduction and FN Tunneling emission during low and high electric field region, respectively. Compared with the pure BFO, all the thin films with Cr[Formula: see text] doping possess reduced leakage current density by 1–2 orders of magnitude, with the lowest value approximately 10[Formula: see text] at 200[Formula: see text]kV/cm. Moreover, the 0.04BFCO thin film exhibits the maximum remanent polarization ([Formula: see text]) value of 29.8[Formula: see text][Formula: see text]C/cm2 with a great fatigue behavior, which could be ascribed to the absence of impurity phase and reduced leakage current.

The Ohmic Conduction Mechanism in High-Dielectric-Constant ZrO[sub 2] Thin Films

2005 ◽  
Vol 152 (7) ◽  
pp. G542 ◽  
Author(s):  
Ming-Tsong Wang ◽  
Shao-You Deng ◽  
Tsung-Hong Wang ◽  
Bonds Yi-Yi Cheng ◽  
Joseph Ya-min Lee
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Conduction Mechanism ◽  
High Dielectric Constant ◽  
Ohmic Conduction ◽  
High Dielectric

Field Dependent Carrier Transport Mechanisms in Metal-Insulator–Metal Devices with Ba0.8Sr0.2TiO3/ ZrO2 Heterostructured Thin Films as the Dielectric

2013 ◽  
Vol 1547 ◽  
pp. 53-60
Author(s):  
Santosh K. Sahoo ◽  
H. Bakhru ◽  
Sumit Kumar ◽  
D. Misra ◽  
Colin A. Wolden ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Leakage Current ◽  
Electron Trap ◽  
Field Region ◽  
Ohmic Conduction ◽  
Metal Insulator ◽  
Conduction Mechanisms ◽  
Conduction Process ◽  
Metal Insulator Metal

ABSTRACTBa0.8Sr0.2TiO3/ZrO2 heterostructured thin films with different individual layer ZrO2 thicknesses are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel process. The current versus voltage (I-V) measurements of the above multilayered thin films in metal-insulator-metal (MIM) device structures are taken in the temperature range of 310 to 410K. The electrical conduction mechanisms contributing to the leakage current at different field regions have been studied in this work. Various models are used to know the different conduction mechanisms responsible for the leakage current in these devices. It is observed that Poole-Frenkel mechanism is the dominant conduction process in the high field region with deep electron trap energy levels (φt) whereas space charge limited current (SCLC) mechanism is contributing to the leakage current in the medium field region with shallow electron trap levels (Et). Also, it is seen that Ohmic conduction process is the dominant mechanism in the low field region having activation energy (Ea) for the electrons. The estimated trap level energy varies from 0.2 to 1.31 eV for deep level traps and from 0.08 to 0.18 eV for shallow level traps whereas the activation energy for electrons in ohmic conduction process varies from 0.05 to 0.17 eV with the increase of ZrO2 sub layer thickness. An energy band diagram is given to explain the dominance of the various leakage mechanisms in different field regions for these heterostructured thin films.

Carrier Transport Mechanisms in Metal-Insulator–Metal Au/Ba0.8Sr0.2TiO3/ ZrO2/ Ba0.8Sr0.2TiO3/Pt Thin Film Heterostructures

2013 ◽  
Vol 1507 ◽  
Author(s):  
Santosh K. Sahoo ◽  
H. Bakhru ◽  
Sumit Kumar ◽  
D. Misra ◽  
Colin A. Wolden ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Leakage Current ◽  
Sol Gel ◽  
Level Energy ◽  
Trap Level ◽  
Ohmic Conduction ◽  
Metal Insulator ◽  
Conduction Process ◽  
Metal Insulator Metal

ABSTRACTBa0.8Sr0.2TiO3/ZrO2 heterostructured thin films are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel process. The current versus voltage (I-V) measurements of metal-insulator-metal (MIM) devices using the above multilayered thin film as the dielectric have been taken in the temperature range of 310 to 410K. The electrical conduction mechanisms contributing to the leakage current at different field regions have been studied in this work. Various models are used to know the different leakage mechanisms contributing to the conduction current in these devices. It is observed that Poole-Frenkel mechanism is the dominant conduction process in the high field region with a deep trap level energy (φt) of 1.31 eV whereas space charge limited current (SCLC) mechanism and Ohmic conduction process are contributing to the leakage current in the medium and low field regions respectively. The estimated shallow trap level (Et) for SCLC mechanism is 0.26 eV whereas the activation energy (Ea) for the electrons in the Ohmic conduction process is about 0.07 eV. An energy band diagram is given to explain the various leakage mechanisms in different field regions for these heterostructured thin films.

Non-Ohmic conduction in polydiacetylene thin films

2005 ◽  
Vol 5 (1) ◽  
pp. 85-89 ◽  
Author(s):  
A.N. Aleshin ◽  
S.W. Chu ◽  
V.I. Kozub ◽  
S.W. Lee ◽  
J.Y. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Ohmic Conduction

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

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