Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers

2021 ◽  
Vol 129 (11) ◽  
pp. 115701
Author(s):  
Masashi Kato ◽  
Takato Asada ◽  
Takuto Maeda ◽  
Kenji Ito ◽  
Kazuyoshi Tomita ◽  
...  
Keyword(s):  
Hole Trap

Deep hole trap properties ofp‐type ZnSe grown by molecular beam epitaxy

1993 ◽  
Vol 63 (2) ◽  
pp. 191-193 ◽  
Author(s):  
K. Ando ◽  
Y. Kawaguchi ◽  
T. Ohno ◽  
A. Ohki ◽  
S. Zembutsu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Trap ◽  
Deep Hole

Hole trap, leakage current and barrier inhomogeneity in (Pt/Au) Al0.2Ga0.8N/GaN heterostructures

2019 ◽  
Vol 132 ◽  
pp. 157-161 ◽  
Author(s):  
Salah Saadaoui ◽  
Olfa Fathallah ◽  
Fethi Albouchi ◽  
Mohamed Mongi Ben Salem ◽  
Christophe Gaquière ◽  
...  
Keyword(s):  
Leakage Current ◽  
Hole Trap ◽  
Barrier Inhomogeneity

Direct observation of the carbazole hole trap in polymer solid films by the charge-resonance band

1996 ◽  
Vol 263 (3-4) ◽  
pp. 602-606 ◽  
Author(s):  
Hideo Ohkita ◽  
Yasuyuki Nomura ◽  
Akira Tsuchida ◽  
Masahide Yamamoto
Keyword(s):  
Direct Observation ◽  
Hole Trap ◽  
Solid Films ◽  
Resonance Band

Relationship between a nitrogen-related hole trap and ionized acceptors density in p-type GaAsN grown by chemical beam epitaxy

2010 ◽  
Vol 8 (2) ◽  
pp. 616-618 ◽  
Author(s):  
Boussairi Bouzazi ◽  
Hidetoshi Suzuki ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Chemical Beam Epitaxy ◽  
Hole Trap ◽  
P Type

Two fold coordinated silicon atom: a hole trap in SiO2

2002 ◽  
Vol 121 (6-7) ◽  
pp. 301-304 ◽  
Author(s):  
V.A. Gritsenko ◽  
A.V. Shaposhnikov ◽  
G.M. Zhidomirov ◽  
M. Roger
Keyword(s):  
Silicon Atom ◽  
Hole Trap

Role of Hole Trap Sites in MoS2 for Inconsistency in Optical and Electrical Phenomena

2018 ◽  
Vol 10 (12) ◽  
pp. 10580-10586 ◽  
Author(s):  
Minh Dao Tran ◽  
Ji-Hee Kim ◽  
Hyun Kim ◽  
Manh Ha Doan ◽  
Dinh Loc Duong ◽  
...  
Keyword(s):  
Hole Trap

Guanine of the Third Strand of C·G*G Triplex Serves as an Effective Hole Trap

2002 ◽  
Vol 124 (49) ◽  
pp. 14580-14585 ◽  
Author(s):  
Chikara Dohno ◽  
Kazuhiko Nakatani ◽  
Isao Saito
Keyword(s):  
Hole Trap ◽  
The Third

Pb++ as a hole trap in KCl: ESR and optical absorption of Pb+++

1970 ◽  
Vol 8 (6) ◽  
pp. 435-439 ◽  
Author(s):  
Dirk Schoemaker ◽  
James L. Kolopus
Keyword(s):  
Optical Absorption ◽  
Hole Trap

Dislocations and Traps in MBE Grown Lattice Mismatched p- InGaAs/GaAs Layers on GaAs Substrates

1997 ◽  
Vol 484 ◽  
Author(s):  
A. Y. Du ◽  
M. F. Li ◽  
T. C. Chong ◽  
Z. Zhang
Keyword(s):  
Activation Energy ◽  
Layer Thickness ◽  
Deep Level ◽  
Photo Luminescence ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Trap Level ◽  
Nonradiative Recombination ◽  
Hole Trap ◽  
Transient Spectroscopy

AbstractDislocations and traps in MBE grown p-InGaAs/GaAs lattice-mismatched heterostructures are investigated by Cross-section Transmission Electron Microscopy (XTEM), Deep Level Transient Spectroscopy (DLTS) and Photo-luminescence (PL). The misfit dislocations and the threading dislocations observed by XTEM in different samples with different In mole fractions and different InGaAs layer thickness generally satisfy the Dodson-Tsao's plastic flow critical layer thickness curve. The threading dislocations in bulk layers introduce three hole trap levels HI, H2 and H5 with DLTS activation energies of 0.32 eV, 0.40 eV, 0.88 eV, respectively, and one electron trap El with DLTS activation energy of 0.54 eV. The misfit dislocations in relaxed InGaAs/GaAs interface induce a hole trap level H4 with DLTS activation energy between the range of 0.67–0.73 eV. All dislocation induced traps are nonradiative recombination centers which greatly degrade the optical property of the InGaAs/GaAs layers.

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