Relationship between a nitrogen-related hole trap and ionized acceptors density in p-type GaAsN grown by chemical beam epitaxy

2010 ◽  
Vol 8 (2) ◽  
pp. 616-618 ◽  
Author(s):  
Boussairi Bouzazi ◽  
Hidetoshi Suzuki ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Chemical Beam Epitaxy ◽  
Hole Trap ◽  
P Type

Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy

2010 ◽  
Vol 49 (12) ◽  
pp. 121001 ◽  
Author(s):  
Boussairi Bouzazi ◽  
Hidetoshi Suzuki ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Chemical Beam Epitaxy ◽  
Hole Trap ◽  
P Type

Hole Trap Associated with High Background Doping in P-type GaAsN Grown by Chemical Beam Epitaxy

2014 ◽  
Author(s):  
O. Elleuch ◽  
L. Wang ◽  
K. Demizu ◽  
K. Ikeda ◽  
N. Kojima ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
Hole Trap ◽  
High Background ◽  
Background Doping ◽  
P Type

Carbon Incorporation in Gaas grown by UHVCVD Using Trimethylgallium and Arsine

1992 ◽  
Vol 281 ◽  
Author(s):  
Seong-Ju Park ◽  
Jeong-Rae Ro ◽  
Jae-Ki Sim ◽  
El-Hang Lee
Keyword(s):  
Growth Rates ◽  
Hole Concentration ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Chemical Beam Epitaxy ◽  
Hydrogen Atoms ◽  
Carbon Incorporation ◽  
Significant Drop ◽  
P Type

ABSTRACTWe present results of a study on the effect of unprecracked arsine(AsH3) and trimethylgallium(TMGa) on carbon incorporation in UHVCVD(Ultra High Vacuum Chemical Vapor Deposition) grown GaAs epilayers on GaAs(100). Three distinct temperature-dependent regions of growth rates were identified as growth temperature was increased from 570 to 690°C. The growth rates were also strongly dependent on V/III ratio in a range of 5 to 30, which clearly indicates that the growth rate is determined by the amount of arsenic adsorbed on the surface at low V/III ratio and adsorption of TMGa or decomposition process at high V/III ratio. Hall concentration measurements and low temperature photoluminescence data show that the films are all p-type and their impurity concentrations are reduced by two orders of magnitude compared to those of epilayers grown by CBE(Chemical Beam Epitaxy) which employs TMGa and arsenic(precracked arsines) as source materials. Our results indicate that the hydrogen atoms dissociated from adsorbed arsine may remove hydrocarbon species resulting in a significant drop in hole concentration.

Influence of Oxygen and Boron on Defect Production in Irradiated Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
P. J. Drevinsky ◽  
C. E. Caefer ◽  
S. P. Tobin ◽  
J. C. Mikkelsen ◽  
L. C. Kimerling
Keyword(s):  
Carbon Content ◽  
Oxygen Content ◽  
Boron Concentration ◽  
Electron Trap ◽  
Hole Trap ◽  
Defect Production ◽  
Interstitial Defects ◽  
Defect Reactions ◽  
P Type ◽  
Initial Results

ABSTRACTIntroduction rates of dominant defects have been determined for electron-irradiated, p-type silicon as a function of oxygen and boron concentration. Samples included those with oxygen content ranging from 8 × 1015 to 7 × 1017 cm−3. Initial results are described for samples with measured carbon content varying from 2 × 1015 to 6 × 1016 cm−3. Competing defect reactions involving the interstitial defects, Bi and Ci, and oxygen, boron, and carbon are observed. The identities of an electron trap (Bi-Oi) and a hole trap (Bi-Bs) have been clarified.

A recombination center in p-type GaAsN grown by chemical beam epitaxy

2011 ◽  
Vol 95 (1) ◽  
pp. 281-283 ◽  
Author(s):  
Boussairi Bouzazi ◽  
Hidetoshi Suzuki ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Recombination Center ◽  
Chemical Beam Epitaxy ◽  
P Type

scholarly journals High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Energies ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 6098
Author(s):  
Gwen Rolland ◽  
Christophe Rodriguez ◽  
Guillaume Gommé ◽  
Abderrahim Boucherif ◽  
Ahmed Chakroun ◽  
...  
Keyword(s):  
High Electron Mobility Transistor ◽  
Device Performance ◽  
High Electron ◽  
Chemical Beam Epitaxy ◽  
High Electron Mobility ◽  
Device Failure ◽  
Gan Hemt ◽  
Silvaco Atlas ◽  
P Type ◽  
The Impact

In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm−3 p doping, a Vth of 1.5 V is achieved. Four terminal breakdowns of the fabricated device are investigated, and the origin of the device failure is identified.

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

2015 ◽  
Vol 117 (4) ◽  
pp. 045712 ◽  
Author(s):  
Omar Elleuch ◽  
Li Wang ◽  
Kan-Hua Lee ◽  
Koshiro Demizu ◽  
Kazuma Ikeda ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
High Concentration ◽  
P Type

Analysis of the main acceptor defect in p-type GaAsN grown by chemical beam epitaxy

2014 ◽  
Vol 53 (9) ◽  
pp. 091201 ◽  
Author(s):  
Omar Elleuch ◽  
Boussairi Bouzazi ◽  
Hiroyuki Kowaki ◽  
Kazuma Ikeda ◽  
Nobuaki Kojima ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
Acceptor Defect ◽  
P Type

Chemical Beam Epitaxial Growth of GaAs Epilayer on GaAs (100) Substrate Using Unprecracked Arsine and Trimethylgallium

1991 ◽  
Vol 240 ◽  
Author(s):  
Seong-Ju Park ◽  
Jae-Ki Sim ◽  
Jeong-Rae Ro ◽  
Byueng-Su Yoo ◽  
Kyung-Ho Park ◽  
...  
Keyword(s):  
Growth Rate ◽  
Optical Properties ◽  
Hole Concentration ◽  
Impurity Content ◽  
Chemical Beam Epitaxy ◽  
Hydrogen Atoms ◽  
Carbon Incorporation ◽  
Electrical And Optical Properties ◽  
Significant Drop ◽  
P Type

ABSTRACTWe present preliminary results aimed at investigating the effects of unprecracked arsine and trimethylgallium on the CBE (chemical beam epitaxy) growth of GaAs epilayers. We find that the growth rate rises linearly as the V/III ratio is increased when TMGa and arsine are used. All of the runs produced p-type material mainly due to carbon incorporation with the hole concentration typically of 1017 cm−3. The impurity content of the layers was found to depend distinctly on the pressure of TMGa. The significant drop in hole concentration is due in part to the hydrogen atoms generated from decomposed AsH3 which then aids in the removal of CH3 radicals on the surface. As a result of using unprecracked arsine for growth of the GaAs epilayers, we measure substantial improvements in their electrical and optical properties.

scholarly journals INJECTION ANNEALING OF THE SELF DI-INTERSTITIAL – OXYGEN COMPLEX IN p-TYPE SILICON

2018 ◽  
Vol 54 (2) ◽  
pp. 220-228
Author(s):  
L. F. Makarenko ◽  
S. B. Lastovskii ◽  
E. Gaubas ◽  
Je. A. Pavlov ◽  
M. Moll ◽  
...  
Keyword(s):  
Current Density ◽  
Room Temperature ◽  
Correlation Energy ◽  
Defect Density ◽  
Deep Level ◽  
Electron Trap ◽  
Interstitial Oxygen ◽  
Hole Trap ◽  
Type Silicon ◽  
P Type

With the use of deep level transient spectroscopy (DLTS) the effect of injection of minority charge carriers (electrons) on an annealing rate of self di-interstitial – oxygen (I2O) complex in silicon has been studied. The complex has been formed by irradiation of epitaxial boron-doped n+–p diode structures with alpha-particles at room temperature. It has been shown that the disappearance of this complex at room temperature begins at a direct current density of ~1.5 A/cm2. This characteristic current density has been found for 10 W·cm p-type silicon when the total radiation defect density was less than 15 % of the initial boron concentration, a divalent hole trap with energy levels of Ev + 0.43 eV and Ev + 0.54 eV has been found to appear as a result of recombination-enhanced annealing of the I2O. When the I2O complex is annealed thermally, the concurrent appearance of an electron trap with an energy level of Ec – 0.35 eV has been observed. It has been shown that the divalent hole trap represents a metastable configuration (BH-configuration) of the bistable defect, whereas the electron trap is stab le in the p-Si configuration (ME-configuration). From the comparison of DLTS signals related to different defect configurations it is found that the ME-configuration of this bistable defect can be characterized as a center with negative correlation energy. It has been shown that the injection-stimulated processes make it very difficult to obtain reliable data on the formation kinetics of the bistable defect in the BH-configuration when studying the thermal annealing of the I2O complex.

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