AlInAsSb avalanche photodiodes on InP substrates

2021 ◽  
Vol 118 (9) ◽  
pp. 091101
Author(s):  
S. H. Kodati ◽  
S. Lee ◽  
B. Guo ◽  
A. H. Jones ◽  
M. Schwartz ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Inp Substrates

Low noise AlInAsSb avalanche photodiodes on InP substrates for 1.55 µm infrared applications

2021 ◽  
Author(s):  
Sri Harsha Kodati ◽  
Seung Hyun Lee ◽  
Bingtian Guo ◽  
Andrew H. Jones ◽  
Mariah Schwartz ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Low Noise ◽  
Inp Substrates

Low noise Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes on InP substrates

2021 ◽  
Vol 118 (8) ◽  
pp. 081106
Author(s):  
S. Lee ◽  
S. H. Kodati ◽  
B. Guo ◽  
A. H. Jones ◽  
M. Schwartz ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Low Noise ◽  
Inp Substrates

Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates

2002 ◽  
Vol 14 (12) ◽  
pp. 1722-1724 ◽  
Author(s):  
S. Wang ◽  
J.B. Hurst ◽  
F. Ma ◽  
R. Sidhu ◽  
X. Sun ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Low Noise ◽  
Noise Impact ◽  
Inp Substrates

Amorphous Si/SiC phototransistors and avalanche photodiodes

1991 ◽  
Vol 138 (3) ◽  
pp. 226 ◽  
Author(s):  
C.Y. Chang ◽  
J.W. Hong ◽  
Y.K. Fang
Keyword(s):  
Avalanche Photodiodes ◽  
Amorphous Si

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

2019 ◽  
Vol 9 (2) ◽  
pp. 192-197
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya
Keyword(s):  
Optical Pulse ◽  
Pulse Current ◽  
Avalanche Photodiodes ◽  
Simulation Method ◽  
Rectangular Pulse ◽  
Operating Conditions ◽  
Multiple Quantum ◽  
Material System ◽  
Frequency Responses ◽  
The Fourier Transform

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

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