scholarly journals Phase domain boundary motion and memristance in gradient-doped FeRh nanopillars induced by spin injection

2021 ◽  
Vol 118 (12) ◽  
pp. 122403
Author(s):  
Rowan C. Temple ◽  
Mark C. Rosamond ◽  
Jamie R. Massey ◽  
Trevor P. Almeida ◽  
Edmund H. Linfield ◽  
...  
1966 ◽  
Vol 14 (131) ◽  
pp. 1077-1085 ◽  
Author(s):  
S. G. Cupschalk† ◽  
Norman Brown†
Keyword(s):  

Author(s):  
J. Zhu ◽  
J.M. Cowley ◽  
H.Q. Ye

It has been pointed out1 that any discontinuity at the edge of a crystal or within a crystal may give rise to spot splitting in microdiffraction patterns.The present work gives the basic theory for an antiphase domain boundary in Cu3Au and a twinning boundary in a f.c.c. crystal illuminated by a finite electron beam, which has a diameter of about 15Å. The treatment is based on the weak phase object approximation. These boundaries are planar faults. Multiplying a step function s(x) by the crystal potential expresses the discontinuity in the potential of the sample. When both sides of the boundary in the sample are illuminated by the finite coherent source and the boundary is parallel to the electron beam, the splitting of microdiffraction spots results from the convolution of the Fourier transform of the step function and the finite coherent source function.


1998 ◽  
Vol 4 (S2) ◽  
pp. 552-553
Author(s):  
Xiwei Lin ◽  
Conal Murray ◽  
Vinayak P. Dravid

A large number of electroceramics derive their technologically useful and scientifically appealing properties via electrically active (charged) interfaces.[l] These interfaces can be simple grain boundaries in, for example, varistors, to complicated domain configuration in ferroelectric thin films. Several common issues relate to virtually all electrically active interfaces. The electrical activity of such interfaces is usually a consequence of trapping of charged electronic and/or ionic defects. Such trapping leads to compensating charge of opposite sign across the interfaces, viz. space-charge region. Collectively, they influence and often dominate a wide variety of phenomena, ranging from formation of Schottky barriers to impedence to domain boundary motion.While bulk measurements, either electrical (e.g. P-E, C-V, I-V), optical (e.g. Raman) or resonance (e.g. EPR) have contributed significantly to the understanding of charged interfaces, there are very few direct observations of electrical activity of interfaces at a length-scale which is essential (i.e. 1- 10 nm).


Author(s):  
Friederike Elisa Wührl ◽  
Oliver Krahn ◽  
Sebastian Schenk ◽  
Stefan Förster ◽  
Wolf Widdra

Nature ◽  
1982 ◽  
Vol 300 (5893) ◽  
pp. 621-623 ◽  
Author(s):  
C. T. Chou ◽  
P. B. Hirsch ◽  
M. McLean ◽  
E. Hondros
Keyword(s):  

1995 ◽  
Vol 404 ◽  
Author(s):  
Pita Atala ◽  
R. J. Phaneuf ◽  
N. C. Barteltl ◽  
W. Swiech ◽  
E. Bauer

AbstractWe have used low-energy electron microscopy to investigate the real-time motion of (7×7) out-of-phase domain boundaries in the (7×7) reconstruction on vicinal Si(111), just below the phase transition temperature. As a function of time, the domain boundaries wander and coalesce in one-dimension, parallel to the step edges. We have established that the motion is consistent with the statistical problem of a random walk in the presence of absorbing barriers and have measured the diffusion coefficient for domain boundary wandering. The average distance between domain boundaries becomes large as they coarsen, consequently energetic interactions are not significant in determining their arrangement on this surface.


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