High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

2021 ◽  
Vol 118 (5) ◽  
pp. 052104
Author(s):  
Yuxia Feng ◽  
Huarui Sun ◽  
Xuelin Yang ◽  
Kang Liu ◽  
Jie Zhang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
High Quality ◽  
Algan Buffer

INTERLAYER THERMAL BOUNDARY RESISTANCE OF WSe2 INVESTIGATED BY USING TIME-DOMAIN THERMOREFLECTANCE MEASUREMENT

2018 ◽  
Author(s):  
Young Gwan Choi ◽  
Chan June Zhung ◽  
Chang Jae Roh ◽  
Hwi In Ju ◽  
Tae Yun Kim ◽  
...  
Keyword(s):  
Time Domain ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance

The Role of Interface Vibrational Modes in Thermal Boundary Resistance

2021 ◽  
Author(s):  
Christopher M. Stanley ◽  
Benjamin K. Rader ◽  
Braxton H. D. Laster ◽  
Mahsa Servati ◽  
Stefan K. Estreicher
Keyword(s):  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Vibrational Modes

scholarly journals Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 928
Author(s):  
Yong Du ◽  
Zhenzhen Kong ◽  
Muhammet Toprak ◽  
Guilei Wang ◽  
Yuanhao Miao ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Crystalline Quality ◽  
Initial Growth ◽  
Two Dimensional ◽  
High Quality ◽  
Reduced Pressure

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 107 cm−2). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.

High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer

2003 ◽  
Vol 42 (Part 2, No. 3A) ◽  
pp. L226-L228 ◽  
Author(s):  
Baijun Zhang ◽  
Takashi Egawa ◽  
Hiroyasu Ishikawa ◽  
Yang Liu ◽  
Takashi Jimbo
Keyword(s):  
Quantum Well ◽  
Buffer Layer ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Algan Buffer

Enhanced performance thermal diode via thermal boundary resistance at nanoscale

2015 ◽  
Vol 107 (8) ◽  
pp. 084103 ◽  
Author(s):  
M. Tovar-Padilla ◽  
L. Licea-Jimenez ◽  
S. A. Pérez-Garcia ◽  
J. Alvarez-Quintana
Keyword(s):  
Boundary Resistance ◽  
Thermal Boundary Resistance

The Role of Interface Vibrational Modes in Thermal Boundary Resistance

2021 ◽  
Vol 218 (23) ◽  
pp. 2170063
Author(s):  
Christopher M. Stanley ◽  
Benjamin K. Rader ◽  
Braxton H. D. Laster ◽  
Mahsa Servati ◽  
Stefan K. Estreicher
Keyword(s):  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Vibrational Modes

scholarly journals High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an InxAl1–xSb Continuously Graded Buffer Layer

ACS Omega ◽  
2018 ◽  
Vol 3 (12) ◽  
pp. 16805-16805
Author(s):  
Soo Seok Kang ◽  
Suk In Park ◽  
Sang Hoon Shin ◽  
Cheol-Hwee Shim ◽  
Suk-Ho Choi ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Quality
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