Self-rectifying resistive switching phenomena observed in Ti/ZrN/Pt/p-Si structures for crossbar array memory applications

2021 ◽  
Vol 118 (11) ◽  
pp. 112106
Author(s):  
Jinsu Jung ◽  
Dongjoo Bae ◽  
Sungho Kim ◽  
Hee-Dong Kim
Keyword(s):  
Resistive Switching ◽  
Crossbar Array ◽  
Memory Applications

Fabrication of GaO x based crossbar array memristive devices and their resistive switching properties

2020 ◽  
Vol 59 (SM) ◽  
pp. SMMC03
Author(s):  
Mamoru Joko ◽  
Yusuke Hayashi ◽  
Tetsuya Tohei ◽  
Akira Sakai
Keyword(s):  
Resistive Switching ◽  
Crossbar Array

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

The resistive switching characteristics in TaON films for nonvolatile memory applications

2013 ◽  
Vol 528 ◽  
pp. 224-228 ◽  
Author(s):  
Min-Chen Chen ◽  
Ting-Chang Chang ◽  
Yi-Chieh Chiu ◽  
Shih-Cheng Chen ◽  
Sheng-Yao Huang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

scholarly journals Study of the Influence of the Dielectric Composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al Structures on the Resistive Switching Behavior for Memory Applications

2018 ◽  
Vol 85 (8) ◽  
pp. 143-148
Author(s):  
Helena Castán ◽  
Salvador Dueñas ◽  
Kaupo Kukli ◽  
Marianna Kemell ◽  
Mikko Ritala ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Memory Applications
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