scholarly journals Experimentally investigating the degradations of small-signal gain for a GaN class-AB dual-band power amplifier under high temperature and humidity conditions

AIP Advances ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 125219
Author(s):  
Shaohua Zhou
Keyword(s):  
High Temperature ◽  
Power Amplifier ◽  
Dual Band ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain ◽  
Class Ab ◽  
Band Power ◽  
Temperature And Humidity

Toward a zero small‐signal gain laser power amplifier

1974 ◽  
Vol 25 (10) ◽  
pp. 602-605 ◽  
Author(s):  
G. T. Schappert ◽  
E. E. Stark
Keyword(s):  
Power Amplifier ◽  
Laser Power ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain

Realization of a 30-W highly efficient and linear reconfigurable dual-band power amplifier using the continuous mode approach

2013 ◽  
Vol 6 (2) ◽  
pp. 115-128 ◽  
Author(s):  
Vincenzo Carrubba ◽  
Stephan Maroldt ◽  
Markus Mußer ◽  
Herbert Walcher ◽  
Friedbert Van Raay ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Continuous Wave ◽  
Second Harmonic ◽  
Power Level ◽  
Dual Band ◽  
Power Efficient ◽  
Frequency Bands ◽  
Class Ab ◽  
Output Performance ◽  
Band Power

This paper presents the design methodology and the realization of a highly linear and power-efficient reconfigurable dual-band amplifier based on the continuous/Class-ABJ approach. The Class-ABJ theory allows presenting different reactive solutions on both fundamental and second harmonic terminations compared with the standard Class-AB mode. Despite the various terminations, a constant optimum output performance in terms of power, gain, and efficiency can still be achieved. The output impedances are then translated into frequency thus allowing the realization of broadbandpower amplifiers(PAs) at high-power level of 30 W. In this work, the Class-ABJ broadband approach will be used for the realization of a reconfigurable dual-band power amplifier operating in the two frequency bands 2.1–2.2 and 2.5–2.6 GHz. Continuous wave (CW) measurements on the realized PA show power and efficiency greater than 17 W and 55% in the two frequency bands with peak values up to 30 W and 63.7%. Indeed, it is shown that such novel modes can be predistorted and therefore the linearity requirement can also be met.

The Design and Modeling of 2.4 and 3.5 GHz MMIC PA

2012 ◽  
pp. 105-156
Author(s):  
Chin Guek Ang
Keyword(s):  
Power Amplifier ◽  
Wireless Lan ◽  
Return Loss ◽  
High Electron Mobility Transistor ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain ◽  
Power Added Efficiency ◽  
Input And Output ◽  
Amplifier Design

This chapter discusses the design of MMIC power amplifiers for wireless application by using 0.15 µm GaAs Power Pseudomorphic High Electron Mobility Transistor (PHEMT) technology with a gate width of 100 µm and 10 fingers at 2.4 GHz and 3.5 GHz. The design methodology for power amplifier design can be broken down into three main sections: architecture design, small-signal design, and large-signal optimization. For 2.4 GHz power amplifier, with 3.0 V drain voltage, the amplifier has achieved 17.265 dB small-signal gain, input and output return loss of 16.310 dB and 14.418 dB, 14.862 dBm 1-dB compression power with 12.318% power-added efficiency (PAE). For 3.5GHz power amplifier, the amplifier has achieved 14.434 dB small-signal gain, input and output return loss of 12.612 dB and 11.746 dB, 14.665 dBm 1-dB compression power with 11.796% power-added efficiency (PAE). The 2.4 GHz power amplifier can be applied for Wireless LAN applications such as WiFi and WPAN whereas 3.5 GHz power amplifier for WiMax base station.

Toward a laser power amplifier with zero small signal gain

1974 ◽  
Vol 10 (9) ◽  
pp. 690-691
Author(s):  
G. Schappert ◽  
F. Harrison ◽  
W. Reichelt ◽  
E. Stark
Keyword(s):  
Power Amplifier ◽  
Laser Power ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain

Small signal gain for Nd/Cr:YAG ceramics at high temperature

CLEO: 2015 ◽  
2015 ◽  
Author(s):  
Yoshiyuki Honda ◽  
Shinji Motokoshi ◽  
Takahisa Jitsuno ◽  
Noriaki Miyanaga ◽  
Kana Fujioka ◽  
...  
Keyword(s):  
High Temperature ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain

A High-Efficiency 28/39 GHz Dual-Band Power Amplifier MMIC for 5G Communication

2021 ◽  
pp. 1-1
Author(s):  
Heng Xie ◽  
Yu Jian Cheng ◽  
Yan Ran Ding ◽  
Lei Wang ◽  
Yong Fan
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Dual Band ◽  
Band Power ◽  
5G Communication

Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers

2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Output Power ◽  
Heterojunction Bipolar Transistors ◽  
Power Amplifiers ◽  
Small Signal Gain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Gain ◽  
Power Added Efficiency ◽  
Saturated Output Power

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

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