scholarly journals Amplifying spin waves along Néel domain wall by spin–orbit torque

2021 ◽  
Vol 118 (6) ◽  
pp. 062405
Author(s):  
Xiangjun Xing ◽  
T. Wang ◽  
Yan Zhou
Keyword(s):  
Domain Wall ◽  
Spin Waves ◽  
Spin Orbit ◽  
Néel Domain Wall

scholarly journals Spin orbit torque induced asymmetric depinning of chiral Néel domain wall in Co/Ni heterostructures

2017 ◽  
Vol 110 (16) ◽  
pp. 162402 ◽  
Author(s):  
M. Ramu ◽  
S. Goolaup ◽  
W. L. Gan ◽  
S. Krishnia ◽  
G. J. Lim ◽  
...  
Keyword(s):  
Domain Wall ◽  
Spin Orbit ◽  
Néel Domain Wall

Graded index confined spin waves in a mixed Bloch-Néel domain wall

2020 ◽  
Vol 102 (22) ◽  
Author(s):  
D. Osuna Ruiz ◽  
A. P. Hibbins ◽  
F. Y. Ogrin
Keyword(s):  
Domain Wall ◽  
Spin Waves ◽  
Graded Index ◽  
Néel Domain Wall

scholarly journals Propagation of spin waves through a Néel domain wall

2020 ◽  
Vol 117 (2) ◽  
pp. 022405 ◽  
Author(s):  
O. Wojewoda ◽  
T. Hula ◽  
L. Flajšman ◽  
M. Vaňatka ◽  
J. Gloss ◽  
...  
Keyword(s):  
Domain Wall ◽  
Spin Waves ◽  
Néel Domain Wall

scholarly journals Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Ruyi Chen ◽  
Qirui Cui ◽  
Liyang Liao ◽  
Yingmei Zhu ◽  
Ruiqi Zhang ◽  
...  
Keyword(s):  
Domain Wall ◽  
Tunnel Junctions ◽  
Low Power Consumption ◽  
Stray Field ◽  
Magnetic Memory ◽  
Spin Orbit ◽  
Theoretic Analysis ◽  
Spintronic Devices ◽  
Deterministic Switching ◽  
Moriya Interaction

AbstractPerpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net magnetization and high thermal stability as well as easy reading and writing characteristics, have been intensively explored to replace the ferromagnetic free layers of magnetic tunnel junctions as the kernel of spintronic devices. So far, utilizing spin-orbit torque (SOT) to realize deterministic switching of perpendicular SAF have been reported while a large external magnetic field is typically needed to break the symmetry, making it impractical for applications. Here, combining theoretic analysis and experimental results, we report that the effective modulation of Dzyaloshinskii-Moriya interaction by the interfacial crystallinity between ferromagnets and adjacent heavy metals plays an important role in domain wall configurations. By adjusting the domain wall configuration between Bloch type and Néel type, we successfully demonstrate the field-free SOT-induced magnetization switching in [Co/Pd]/Ru/[Co/Pd] SAF devices constructed with a simple wedged structure. Our work provides a practical route for utilization of perpendicularly SAF in SOT devices and paves the way for magnetic memory devices with high density, low stray field, and low power consumption.

scholarly journals Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing

2021 ◽  
Vol 118 (11) ◽  
pp. 112401
Author(s):  
Mahshid Alamdar ◽  
Thomas Leonard ◽  
Can Cui ◽  
Bishweshwor P. Rimal ◽  
Lin Xue ◽  
...  
Keyword(s):  
Domain Wall ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Orbit

scholarly journals Snell's law for spin waves at a 90° magnetic domain wall

2020 ◽  
Vol 116 (11) ◽  
pp. 112402 ◽  
Author(s):  
Tomosato Hioki ◽  
Rei Tsuboi ◽  
Tom H. Johansen ◽  
Yusuke Hashimoto ◽  
Eiji Saitoh
Keyword(s):  
Domain Wall ◽  
Spin Waves ◽  
Magnetic Domain ◽  
Magnetic Domain Wall ◽  
Snell’S Law ◽  
Snell's Law

scholarly journals Voltage Controlled Domain Wall Motion based Neuron and Stochastic Magnetic Tunnel Junction Synapse for Neuromorphic Computing Applications

2021 ◽  
Author(s):  
Aijaz Lone ◽  
Selma Amara ◽  
Hossein Fariborzi
Keyword(s):  
Domain Wall ◽  
Tunnel Junction ◽  
Thermal Noise ◽  
Wall Motion ◽  
Magnetic Tunnel Junction ◽  
Domain Wall Motion ◽  
Spin Orbit ◽  
Free Layer ◽  
Digit Recognition ◽  
Transport Studies

The present work discusses the proposal of a spintronic neuromorphic system with spin orbit torque driven domain wall motion-based neuron and synapse. We propose a voltage-controlled magnetic anisotropy domain wall motion based magnetic tunnel junction neuron. We investigate how the electric field at the gate (pinning site), generated by the voltage signals from pre-neurons, modulates the domain wall motion, which reflects in the non-linear switching behaviour of neuron magnetization. For the implementation of synaptic weights, we propose 3-terminal MTJ with stochastic domain wall motion in the free layer. We incorporate intrinsic pinning effects by creating triangular notches on the sides of the free layer. The pinning of domain wall and intrinsic thermal noise of device lead to the stochastic behaviour of domain wall motion. The control of this stochasticity by the spin orbit torque is shown to realize the potentiation and depression of the synaptic weight. The micromagnetics and spin transport studies in synapse and neuron are carried out by developing a coupled micromagnetic Non-Equilibrium Green’s Function (<i>MuMag-NEGF</i>) model. The minimization of the writing current pulse width by leveraging the thermal noise and demagnetization energy is also presented. Finally, we discuss the implementation of digit recognition by the proposed system using a spike time dependent algorithm.

Domain-wall motion at an ultrahigh speed driven by spin–orbit torque in synthetic antiferromagnets

2018 ◽  
Vol 29 (17) ◽  
pp. 175404 ◽  
Author(s):  
Ziyang Yu ◽  
Yue Zhang ◽  
Zhenhua Zhang ◽  
Ming Cheng ◽  
Zhihong Lu ◽  
...  
Keyword(s):  
Domain Wall ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Spin Orbit

Efficient Chiral-Domain-Wall Motion Driven by Spin-Orbit Torque in Metastable Platinum Films

2020 ◽  
Vol 14 (3) ◽  
Author(s):  
Chirag Garg ◽  
See-Hun Yang ◽  
Leslie Thompson ◽  
Teya Topuria ◽  
Amir Capua ◽  
...  
Keyword(s):  
Domain Wall ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Spin Orbit
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