Light reflectance and photoelectron yield spectroscopy enable acceptor level measurement in p-type Ba1−xTiO3 semiconductor

2021 ◽  
Vol 129 (8) ◽  
pp. 084105
Author(s):  
Saya Fujii ◽  
Jun Kano ◽  
Norihiro Oshime ◽  
Tohru Higuchi ◽  
Yuta Nishina ◽  
...  
Keyword(s):  
Acceptor Level ◽  
Level Measurement ◽  
Light Reflectance ◽  
P Type

Laser-Doped SiC as Wireless Remote Gas Sensor Based on Semiconductor Optics

2012 ◽  
Vol 717-720 ◽  
pp. 1195-1198
Author(s):  
Geunsik Lim ◽  
Tariq Manzur ◽  
Aravinda Kar
Keyword(s):  
Valence Band ◽  
Energy Gap ◽  
Gas Sensing ◽  
Optical Signal ◽  
Acceptor Level ◽  
Spectral Bands ◽  
Sensing Applications ◽  
Electro Optic ◽  
Midwave Infrared ◽  
P Type

An uncooled SiC-based electro-optic device is developed for gas sensing applications. P-type dopants Ga, Sc, P and Al are incorporated into an n-type crystalline 6H-SiC substrate by a laser doping technique for sensing CO2, CO, NO2 and NO gases, respectively. Each dopant creates an acceptor energy level within the bandgap of the substrate so that the energy gap between this acceptor level and the valence band matches the quantum of energy emitted by the gas of interest. The photons of the gas excite electrons from the valence band to the acceptor level, which alters the electron density in these two states. Consequently, the refractive index of the substrate changes, which, in turn, modifies the reflectivity of the substrate. This change in reflectivity represents the optical signal of the sensor, which is probed remotely with a laser such as a helium-neon laser. Although the midwave infrared (3-5 mm) band is studied in this paper, the approach is applicable to other spectral bands.

The gold donor and acceptor level in p-type silicon

1984 ◽  
Vol 50 (12) ◽  
pp. 1051-1055 ◽  
Author(s):  
P. van Staa ◽  
R. Kassing
Keyword(s):  
Acceptor Level ◽  
Type Silicon ◽  
Donor And Acceptor ◽  
P Type

scholarly journals Enhancement of light reflectance and thermal stability in Ag–Cu alloy contacts on p-type GaN

2008 ◽  
Vol 93 (1) ◽  
pp. 012102 ◽  
Author(s):  
Jun Ho Son ◽  
Gwan Ho Jung ◽  
Jong-Lam Lee
Keyword(s):  
Thermal Stability ◽  
Cu Alloy ◽  
Light Reflectance ◽  
P Type

Electron Accumulation in AIGaSb/InAs Qw System, - Evidence for Coexistence of Deep Acceptor and Donor -

1992 ◽  
Vol 262 ◽  
Author(s):  
S. Ideshita ◽  
A. Furukawa ◽  
Y. Mochizuki ◽  
M. Mizuta
Keyword(s):  
Conduction Band ◽  
Acceptor Level ◽  
Quantum Level ◽  
Energy Position ◽  
Deep Acceptor ◽  
Electron Sources ◽  
Electron Accumulation ◽  
P Type ◽  
Type Conduction

ABSTRACTWe investigated the reason of the (imbalanced) accumulation of electrons in AIGaSb/lnAs/AIGaSb QW system in spite of the p-type conduction of undoped AIGaSb. It was found that the concentration of the accumulated electrons negligibly depended on the number of the interfaces, but increased linearly with the effective AlSb thickness. These results indicate that donor levels in AIGaSb are the dominant electron sources. We propose a model that the deep acceptors with larger concentration and donors coexist, and the electron accumulation depends on the energy position of the acceptor in AIGaSb with respect to the quantum level in the InAs well. Acceptor levels obtained experimentally are about 100 meV higher than the bottom of the InAs conduction band, and we succeeded in eliminating the electron accumulation by making the quantum level of the InAs well higher than this acceptor level. The origins of the donors and acceptors are also discussed.

Investigation on Na Acceptor Level in p-Type Na-Doped ZnMgO Thin Films Prepared by Pulsed Laser Deposition

2019 ◽  
Vol 48 (6) ◽  
pp. 3554-3561 ◽  
Author(s):  
Jiyu Huang ◽  
Cong Chen ◽  
Haiping He ◽  
Chuhan Sha ◽  
Zhizhen Ye
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Acceptor Level ◽  
P Type

Impact Electrical Property of Alkali Metal Doped ZnO

2012 ◽  
Vol 468-471 ◽  
pp. 1501-1507 ◽  
Author(s):  
Hong Ling Tan ◽  
Cong Ying Jia ◽  
Chao Xiang ◽  
Ying Xiang Yang
Keyword(s):  
Alkali Metal ◽  
Metal Ions ◽  
Metal Ion ◽  
Density Functional ◽  
Alkali Metal Ions ◽  
Acceptor Level ◽  
Electronic Density ◽  
Alkali Metal Ion ◽  
Doped Zno ◽  
P Type

Calculate the electronic structure of alkali metal ion-doped Zn crystal, based on density functional theory (DFT) first-principles plane-wave ultra-soft pseudo-potential method. Analyze the band structure of alkali metal ion-doped ZnO crystal, and the electronic density of states. The results indicated that in theory, the doping of alkali metal ions are able to form a p-type ZnO semiconductor, and introduce in the deep acceptor levels. In the actual substitution process, the dopant ions may enter the interstitial site. Thus the alkali metal ions are tending to become donor interstitial impurities. In addition, since the ionic radius of K is larger than the ionic radiuses of Li and Na. And K+ formed the minimum acceptor level (0.078eV), which is a shallow acceptor level. K+ is better than Li+ and Na+ as a dopant. In short, they are not good p-type dopants.

Improved light reflectance and thermal stability of Ag-based ohmic contacts on p-type GaN with La additive

2013 ◽  
Vol 57 ◽  
pp. 51-57 ◽  
Author(s):  
I-Chen Chen ◽  
Bo-Yuan Cheng ◽  
Wen-Cheng Ke ◽  
Cheng-Huang Kuo ◽  
Li-Chuan Chang
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
Light Reflectance ◽  
P Type ◽  
Thermal Stability Of
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