Design and characterization of a velocity-map imaging apparatus for low-energy photo-ion spectroscopy using magneto-optically trapped atoms

2021 ◽  
Vol 92 (4) ◽  
pp. 043103
Author(s):  
Feng Fang ◽  
Wenchang Zhou ◽  
Yufan Li ◽  
Dongbin Qian ◽  
Changjie Luo ◽  
...  
Keyword(s):  
Low Energy ◽  
Velocity Map Imaging ◽  
Trapped Atoms ◽  
Ion Spectroscopy ◽  
Optically Trapped

scholarly journals Characterization of nitrogen species incorporated into graphite using low energy nitrogen ion sputtering

2016 ◽  
Vol 18 (1) ◽  
pp. 458-465 ◽  
Author(s):  
Hisao Kiuchi ◽  
Takahiro Kondo ◽  
Masataka Sakurai ◽  
Donghui Guo ◽  
Junji Nakamura ◽  
...  
Keyword(s):  
Low Energy ◽  
Nitrogen Species ◽  
Ion Sputtering ◽  
Zigzag Edge ◽  
Nitrogen Doped ◽  
Doping Mechanism ◽  
Nitrogen Ions ◽  
Nitrogen Ion

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.

scholarly journals Characterization of low-energy magnetic excitations in chromium

2004 ◽  
Vol 70 (14) ◽  
Author(s):  
H. Hiraka ◽  
P. Böni ◽  
K. Yamada ◽  
S. Park ◽  
S-. H. Lee ◽  
...  
Keyword(s):  
Low Energy ◽  
Magnetic Excitations

Temperature-Dependent Tribological Improvements in Low-Energy Nitrogen Ion Implanted Vanadium-Titanium Alloys

2005 ◽  
Author(s):  
C. Ballesteros ◽  
J. A. Garci´a ◽  
M. I. Orti´z ◽  
R. Rodri´guez ◽  
M. Varela
Keyword(s):  
Tribological Properties ◽  
Low Energy ◽  
Temperature Dependent ◽  
Structural Modifications ◽  
Nanocomposite Layer ◽  
Implantation Temperature ◽  
Transmission Electron ◽  
Nitrogen Ion ◽  
Tribological Characterization

A detailed tribological characterization of low-energy, nitrogen implanted V5 at. %Ti alloy is presented. Samples were nitrogen-implanted at an accelerating voltage of 1.2 kV and 1 mA/cm2, up to a dose of 1E19 ions/cm2. The tribological properties of the alloys: microhardness, friction coefficient and wear resistance, have improved after ion implantation and this improvement increases as the implantation temperature increases. The microstructure of the alloys were analysed by transmission electron microscopy. A direct correlation between structural modifications of the nitrogen implanted layer and the improvement in their tribological properties is obtained. For samples implanted at 848 K a nanocomposite layer where the reinforcement particles are TiN precipitates forms. TiN precipitation appears as the responsible of the improvement in the tribological properties.

Characterization of heat dynamics of an arctic low-energy house with floor heating

2014 ◽  
Vol 7 (6) ◽  
pp. 595-614 ◽  
Author(s):  
Philip Delff Andersen ◽  
María José Jiménez ◽  
Henrik Madsen ◽  
Carsten Rode
Keyword(s):  
Low Energy ◽  
Floor Heating

scholarly journals Characterization of a free air ionization chamber for low energy X-rays

2016 ◽  
Vol 733 ◽  
pp. 012090
Author(s):  
N F Silva ◽  
M Xavier ◽  
V Vivolo ◽  
L V E Caldas
Keyword(s):  
Ionization Chamber ◽  
Low Energy ◽  
X Rays ◽  
Free Air ◽  
Air Ionization

scholarly journals Low Energy STEM-EELS Characterization of Primitive Organic Matter and Silicates in the Meteorite LAP 02342

2018 ◽  
Vol 24 (S1) ◽  
pp. 2074-2075
Author(s):  
Bradley T. De Gregorio ◽  
Rhonda M. Stroud ◽  
Larry R. Nittler ◽  
Conel M. O’D. Alexander ◽  
Jemma Davidson ◽  
...  
Keyword(s):  
Organic Matter ◽  
Low Energy

scholarly journals Mechanical Characterization of a Nano-ODS Steel Prepared by Low-Energy Mechanical Alloying

Metals ◽  
2017 ◽  
Vol 7 (8) ◽  
pp. 283 ◽  
Author(s):  
Massimo Sanctis ◽  
Alessandra Fava ◽  
Gianfranco Lovicu ◽  
Roberto Montanari ◽  
Maria Richetta ◽  
...  
Keyword(s):  
Mechanical Alloying ◽  
Mechanical Characterization ◽  
Low Energy ◽  
Ods Steel

Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

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