Bismuth-catalyzed n-type doping and growth evolution of planar silicon nanowires

2020 ◽  
Vol 117 (24) ◽  
pp. 243103
Author(s):  
Taige Dong ◽  
Ying Sun ◽  
Junzhuan Wang ◽  
Jun Xu ◽  
Kunji Chen ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Planar Silicon ◽  
Growth Evolution

Unexpected phosphorus doping routine of planar silicon nanowires for integrating CMOS logics.

Nanoscale ◽  
2021 ◽  
Author(s):  
Ying Sun ◽  
Wentao Qian ◽  
Shuaishuai Liu ◽  
Taige Dong ◽  
Junzhuan Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Nanowires ◽  
High Performance ◽  
Silicon Nanowire ◽  
Doping Control ◽  
Phosphorus Doping ◽  
Planar Silicon ◽  
Amorphous Si ◽  
Solid Liquid ◽  
Si Thin Film

Complementary doping control in silicon nanowire (SiNW) channels is crucial for the construction of high-performance CMOS logics. Though planar in-plane solid-liquid-solid (IPSLS) growth, with amorphous Si (a-Si) thin film as...

Plasmon-assisted interaction of Si with light, for cancer hyperthermia and electromagnetic energy harvest

2020 ◽  
Vol 92 (2) ◽  
pp. 20101
Author(s):  
Behnam Kheyraddini Mousavi ◽  
Morteza Rezaei Talarposhti ◽  
Farshid Karbassian ◽  
Arash Kheyraddini Mousavi
Keyword(s):  
Silicon Nanowires ◽  
Metallic Nanoparticles ◽  
Near Infrared ◽  
Optical Transition ◽  
Electromagnetic Energy ◽  
Energy Harvest ◽  
Absorption Enhancement ◽  
Ir Absorption ◽  
Absorption Mechanism ◽  
Near Ir

Metal-assisted chemical etching (MACE) is applied for fabrication of silicon nanowires (SiNWs). We have shown the effect of amorphous sheath of SiNWs by treating the nanowires with SF6 and the resulting reduction of absorption bandwidth, i.e. making SiNWs semi-transparent in near-infrared (IR). For the first time, by treating the fabricated SiNWs with copper containing HF∕H2O2∕H2O solution, we have generated crystalline nanowires with broader light absorption spectrum, up to λ = 1 μm. Both the absorption and photo-luminescence (PL) of the SiNWs are observed from visible to IR wavelengths. It is found that the SiNWs have PL at visible and near Infrared wavelengths, which may infer presence of mechanisms such as forbidden gap transitions other can involvement of plasmonic resonances. Non-radiative recombination of excitons is one of the reasons behind absorption of SiNWs. Also, on the dielectric metal interface, the absorption mechanism can be due to plasmonic dissipation or plasmon-assisted generation of excitons in the indirect band-gap material. Comparison between nanowires with and without metallic nanoparticles has revealed the effect of nanoparticles on absorption enhancement. The broader near IR absorption, paves the way for applications like hyperthermia of cancer while the optical transition in near IR also facilitates harvesting electromagnetic energy at a broad spectrum from visible to IR.

Phonon spectrum and specific heat of silicon nanowires

2007 ◽  
Vol 102 (10) ◽  
pp. 104303 ◽  
Author(s):  
Y. Zhang ◽  
J. X. Cao ◽  
Y. Xiao ◽  
X. H. Yan
Keyword(s):  
Specific Heat ◽  
Silicon Nanowires ◽  
Phonon Spectrum

Cyclic Voltammetric biosensing of cellular ionic secretion based on silicon nanowires to detect the effect of paclitaxel on breast Normal and Cancer cells

2021 ◽  
pp. 111512
Author(s):  
Hani Shashaani ◽  
Navid Akbari ◽  
Mahsa Faramarzpour ◽  
Mohammad Salemizadeh Parizi ◽  
Shohreh Vanaei ◽  
...  
Keyword(s):  
Cancer Cells ◽  
Silicon Nanowires ◽  
Cyclic Voltammetric

scholarly journals Recording site placement on planar silicon-based probes affects signal quality in acute neuronal recordings

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Richárd Fiáth ◽  
Domokos Meszéna ◽  
Zoltán Somogyvári ◽  
Mihály Boda ◽  
Péter Barthó ◽  
...  
Keyword(s):  
Single Unit ◽  
Brain Activity ◽  
Amplitude Distribution ◽  
High Amplitude ◽  
Neural Implants ◽  
Recording Site ◽  
Significant Difference ◽  
Planar Silicon ◽  
Silicon Based ◽  
Unit Yield

AbstractMultisite, silicon-based probes are widely used tools to record the electrical activity of neuronal populations. Several physical features of these devices are designed to improve their recording performance. Here, our goal was to investigate whether the position of recording sites on the silicon shank might affect the quality of the recorded neural signal in acute experiments. Neural recordings obtained with five different types of high-density, single-shank, planar silicon probes from anesthetized rats were analyzed. Wideband data were filtered to extract spiking activity, then the amplitude distribution of samples and quantitative properties of the recorded brain activity (single unit yield, spike amplitude and isolation distance) were compared between sites located at different positions of the silicon shank, focusing particularly on edge and center sites. Edge sites outperformed center sites: for all five probe types there was a significant difference in the signal power computed from the amplitude distributions, and edge sites recorded significantly more large amplitude samples both in the positive and negative range. Although the single unit yield was similar between site positions, the difference in spike amplitudes was noticeable in the range corresponding to high-amplitude spikes. Furthermore, the advantage of edge sites slightly decreased with decreasing shank width. Our results might aid the design of novel neural implants in enhancing their recording performance by identifying more efficient recording site placements.

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