Revealing the impact of aluminum doping on opto-electronic properties of CuGaSe2 thin films flexible solar cells - A DFT study

2020 ◽  
Author(s):  
Karina Khan ◽  
Aditi Gaur ◽  
Amit Soni ◽  
Jagrati Sahariya
2016 ◽  
Vol 4 (2) ◽  
pp. 561-567 ◽  
Author(s):  
Yuanhang Cheng ◽  
Ho-Wa Li ◽  
Jinfeng Zhang ◽  
Qing-Dan Yang ◽  
Taili Liu ◽  
...  

The loading time of MAI during perovskite film formation determines the chemical composition, hysteresis, and photovoltaic performance.


2021 ◽  
Vol 129 (16) ◽  
pp. 165302
Author(s):  
J. J. Andrews ◽  
M. Beaudoin ◽  
S. K. O’Leary ◽  
P. Koirala ◽  
B. Ramanujam ◽  
...  

2017 ◽  
pp. 263-288 ◽  
Author(s):  
Sheng Hsiung Chang ◽  
Sheng Hsiung Chang ◽  
Cheng-Chiang Chen ◽  
Hsin-Ming Cheng ◽  
Sheng-Hui Chen

1991 ◽  
Vol 14 (3) ◽  
pp. 151-161 ◽  
Author(s):  
G. Campet ◽  
C. Geoffroy ◽  
S. J. Wen ◽  
J. Portier ◽  
P. Keou ◽  
...  

ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influence of thermal treatment on the electronic properties of the films has been particularly investigated. Electrical measurements were performed between 95 and 600 K. Free carriers concentration in the film were measured by Hall effect coefficient. Optical indices were determined by computer drawing of charts allowing to simplify Manifacier method.Finally study of SIS tunnel solar cells, based on Si/(RF sputtered) ITO junctions is presented.


1990 ◽  
Author(s):  
W. A. Nevin ◽  
H. Yamagishi ◽  
K. Asaoka ◽  
H. Nishio ◽  
Y. Tawada

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