Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film

2020 ◽  
Vol 117 (25) ◽  
pp. 252906
Author(s):  
Seungyeol Oh ◽  
Hyungwoo Kim ◽  
Alireza Kashir ◽  
Hyunsang Hwang
2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.


2010 ◽  
Vol 17 (05n06) ◽  
pp. 445-449 ◽  
Author(s):  
SUHUA FAN ◽  
QUANDE CHE ◽  
FENGQING ZHANG

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi ) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.


2007 ◽  
Vol 253 (14) ◽  
pp. 6222-6225 ◽  
Author(s):  
Jiagang Wu ◽  
Jiliang Zhu ◽  
Dingquan Xiao ◽  
Jianguo Zhu ◽  
Junzhe Tan ◽  
...  

2011 ◽  
Vol 335-336 ◽  
pp. 1418-1423
Author(s):  
De Yin Zhang ◽  
Wei Qian ◽  
Kun Li ◽  
Jian Sheng Xie

The Ion Beam Enhanced Deposited (IBED) lithium tantalate (LiTaO3) thin film samples with Al/LiTaO3/Pt electrode structure were prepared on the Pt/Ti/SiO2/Si(100) and SiO2/Si(100) substrate respectively. The crystallization, surface morphology, ferroelectric property, and fatigue property of the prepared samples with the different annealed processes were investigated. The XRD measured results show that the prepared samples have the polycrystal structure of LiTaO3 with the preferred orientation of <012> and <104> located at the 2θ of 23.60 and 32.70 respectively. The SEM morphology analysis reveals the prepared film annealed at 550°C is uniform, smooth and crack-free on the surface and cross section. The ferroelectric property measured results show that the remanent polarization Pr of the samples annealed at different temperature almost increase with the electric field intensity stronger. The leakage current makes the hysteresis loop of the samples subjected to a strong measured electric filed difficult to appear the same saturation hysteresis loop as the single-crystal LiTaO3. The prepared samples annealed at 550°C have a Pr value of 11.5μC/cm2 when subjected to the electrical field of 400kV/cm. The breakdown voltage of the 587nm thick thin film sample is high as to 680 kV/cm. The fatigue property measured results show only 15.17% Pr drop of the prepared films annealed at 550°C appear after 5×1010 cycles polarized by the 10MHz sinusoidal signal with the peak-to-peak amplitude of 10 Volt. The ferroelectric properties of the prepared films meet the practical application requirements of charge response measurement of the LiTaO3 infrared detector owe to the Pr of the prepared films annealed at different temperature large beyond 10μC/cm2 when the prepared films subjected to a strong electric filed larger than 400 kV/cm. The experimental results also show that the surface morphology, the ferroelectric and fatigue properties of the IBED LiTaO3 thin films are significant better than those of the Sol-Gel derived LiTaO3 thin films.


2007 ◽  
Vol 329 ◽  
pp. 619-624
Author(s):  
L.Q. Du ◽  
Y. Lv ◽  
Wei Jie Dong ◽  
X.G. Gao

Piezoelectric bimorph fabricated by hydrothermal method is presented in the paper. This method is low cost, simple and easy. In order to describe the characteristics of piezoelectric bimorph, properties of PZT film are studied by XRD and SEM. The ratio of PbTiO3/PbZrO3 in PZT is 53/47, which is around morphotropic phase boundary (MPB). PZT film is composed of cubic particles with the average size of 5μm. Density is figured out through the datum measured in experiments. The model used to analyze the driving ability of bimorph is set up; piezoelectric coefficient d31 of PZT film is worked out using this model. Finally, the ferroelectric property of the bimorph is investigated and coercive voltage of the bimorph Vc =1.67V is obtained.


2020 ◽  
Vol 301 ◽  
pp. 112369 ◽  
Author(s):  
Yanxing Zheng ◽  
Jiwei Wang ◽  
Xinqiao Tang ◽  
Lei Zhang ◽  
Fanbao Meng

2001 ◽  
Vol 40 (Part 1, No. 11) ◽  
pp. 6481-6486 ◽  
Author(s):  
Tomohiro Sakai ◽  
Takayuki Watanabe ◽  
Yasuo Cho ◽  
Kaori Matsuura ◽  
Hiroshi Funakubo

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