Enhanced ferroelectric property of (Pb0.95Ca0.05)(Nb0.02Zr0.80Ti0.20)O3 thin films prepared by RF magnetron sputtering

2007 ◽  
Vol 253 (14) ◽  
pp. 6222-6225 ◽  
Author(s):  
Jiagang Wu ◽  
Jiliang Zhu ◽  
Dingquan Xiao ◽  
Jianguo Zhu ◽  
Junzhe Tan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Ferroelectric Property ◽  
Rf Magnetron Sputtering

Preparation and Ferroelectric Properties of Bi4-xErxTi3O12 Thin Films

2013 ◽  
Vol 591 ◽  
pp. 232-235
Author(s):  
Jian Guo Liu ◽  
M. Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Ferroelectric Property ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Random Orientation ◽  
Er Doping ◽  
Si Substrates ◽  
Remarkable Improvement

Er2O3-doped bismuth titanate (Bi4-xErxTi3O12, BET) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. The experimental results indicated that Er doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BET film with x=0.75 were 21 μC/cm2 and 80 kV/cm, respectively.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band

Characteristics of Ion Beam Assisted ITO Thin Films Deposited by RF Magnetron Sputtering

2014 ◽  
Vol 601 (1) ◽  
pp. 57-63 ◽  
Author(s):  
Kyong Chan Heo ◽  
Phil Kook Son ◽  
Youngku Sohn ◽  
Jonghoon Yi ◽  
Jin Hyuk Kwon ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Ion Beam ◽  
Rf Magnetron Sputtering ◽  
Ito Thin Films

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Synthesis of GaN nanorods through ammoniating Ga2O3/BN thin films deposited by RF magnetron sputtering

2006 ◽  
Vol 292 (2) ◽  
pp. 294-297 ◽  
Author(s):  
Yuxin Wu ◽  
Chengshan Xue ◽  
Huizhao Zhuang ◽  
Deheng Tian ◽  
Yi’an Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering

Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system

2010 ◽  
Vol 10 (3) ◽  
pp. S463-S467 ◽  
Author(s):  
Kyu Ung Sim ◽  
Seung Wook Shin ◽  
A.V. Moholkar ◽  
Jae Ho Yun ◽  
Jong Ha Moon ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Sputtering System
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