scholarly journals Effect of film structure on CH3NH3PbI3 perovskite thin films’ degradation

AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025226
Author(s):  
F. Khelfaoui ◽  
I. Belaidi ◽  
N. Attaf ◽  
M. S. Aida
Keyword(s):  
Thin Films ◽  
Film Structure

Optimization of p-type Nanocrystalline Silicon Thin Films for Solar Cells and Photodiodes

2009 ◽  
Vol 1153 ◽  
Author(s):  
Yuri Vygranenko ◽  
Ehsanollah Fathi ◽  
Andrei Sazonov ◽  
Manuela Vieira ◽  
Gregory Heiler ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Chemical Vapor ◽  
Percolation Cluster ◽  
Nanocrystalline Silicon ◽  
Film Structure ◽  
Silicon Thin Films ◽  
Low Leakage ◽  
In Doping ◽  
P Type

AbstractWe report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150°C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The film thickness was varied in the range from 14 to 100 nm. The conductivity of 60 nm thick films reached a peak value of 0.07 S/cm at a doping ratio of 1%. As a result of amorphization of the film structure, which was indicated by Raman spectra measurements, any further increase in doping reduced conductivity. We also observed an abrupt increase in conductivity with increasing film thickness ascribed to a percolation cluster composed of silicon nanocrystallites. The absorption loss of 25% at a wavelength of 400 nm was measured for the films with optimized conductivity deposited on glass and glass/ZnO:Al substrates. A low-leakage, blue-enhanced p-i-n photodiode with an nc-Si p-layer was also fabricated and characterized.

Metalorganic Molecular Beam Epitaxy of Magnesium Oxide on Silicon

2000 ◽  
Vol 619 ◽  
Author(s):  
F. Niu ◽  
B.H. Hoerman ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Amorphous Layer ◽  
Film Structure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Epitaxial Relationship ◽  
Transmission Electron ◽  
Metalorganic Molecular Beam Epitaxy

ABSTRACTEpitaxial cubic MgO thin films were deposited on single crystal Si (001) substrates by metalorganic molecular beam epitaxy (MOMBE) using the solid precursor magnesium acetylacetonate as the source and an RF excited oxygen plasma as the oxidant. The growth process involved initial formation of an epitaxial β-SiC interlayer followed by direct deposition of a MgO overlayer. The film structure was characterized by X-ray diffraction as well as conventional and high-resolution transmission electron microscopy. Both the MgO overlayer and β-SiC interlayer had an epitaxial relationship such that MgO (001) (or SiC (001)) // Si (001) and MgO [110] (or SiC [110])// Si [110]. No evidence of an amorphous layer was observed at either the MgO/SiC or SiC/Si interface. Dielectric properties of the epitaxial MgO thin films on Si (001) were evaluated from capacitance-voltage (C-V) characteristic of metal-oxide-semiconductor (MOS) structures. The C-V measurements indicated an interface trap density at midgap as low as 1011 to 1012 cm−2 eV−1 and fixed oxide charge of the order of 1011/ cm2, respectively. These results indicate that epitaxial MgO deposited by MOMBE has potential as a gate insulator.

Characterization of chemically modified thin films for optimization of metal CMP applications

2013 ◽  
Vol 1560 ◽  
Author(s):  
G. Bahar Basim ◽  
Ayse Karagoz ◽  
Zeynep Ozdemir
Keyword(s):  
Thin Films ◽  
Oxide Film ◽  
Metal Oxide ◽  
Film Structure ◽  
Protective Oxide ◽  
Metal Oxide Thin Films ◽  
Chemically Modified ◽  
Surface Active Agents ◽  
Protective Oxide Film ◽  
The Stability

ABSTRACTMetal CMP applications necessitate the formation of a protective oxide film in the presence of surface active agents, oxidizers, pH regulators and other chemicals to achieve global planarization. Formation and mechanical properties of the chemically modified metal oxide thin films in CMP determine the stresses develop at the interfaces delineating the stability and protective nature of the chemically altered films on the surface of the metal wafer. The balance between the stresses built in the film structure versus the mechanical actions provided during the process can be used to optimize the process variables and furthermore help define new planarization techniques for the next generation microelectronic device manufacturing. In this study, the preliminary studies were concentrated on the very well established tungsten CMP applications and furthermore, titanium CMP applications were presented as a part of surface nano-structuring methodology for biomedical applications by stressing the synergistic effect of protective metal oxide film of titanium in this advanced application.

Structural Evolution and Optical Properties of TiO2 Thin Films Prepared by DC-Reactive Sputtering Technique

2013 ◽  
Vol 699 ◽  
pp. 789-794 ◽  
Author(s):  
Laith Rabih ◽  
Sudjatmoko ◽  
Kuwat Triyana ◽  
Pekik Nurwantoro
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Band Gap ◽  
Structural Evolution ◽  
Film Structure ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Alternative Material ◽  
Dc Sputtering Technique ◽  
Economical Alternative

Titanium dioxide (TiO2 ) thin films have been deposited on glass substrates under various conditions by using a homemade reactive DC sputtering technique. The TiO2 has unique characteristics and economical alternative material for transparent conductivity oxide thin films compared with other materials. In this study, titanium (Ti) has been used as a target while argon (Ar) and oxygen (O22</subthin films has been measured by using a calibrated I-V meter. On the other hand, the transparency, microstructure and component of TiO2 thin films have been investigated respectively by using UV-VIS spectrophotometer, XRD and SEM (EDX). The thickness of TiO2 films, the grain size and the band gap have been also successfully estimated. As a result, the conductivity of films increased for Dt at 1 hour to 3.5 hours and decreased for Dt at 4 hours. It means that the optimum Dt was at about 3.5 hours. It may be related to the thickness (structures) of the films. In addition, the thickness and grain size increased by increasing Dt, while the band gap decreased when the film structure changed from non-crystalline structure to crystalizing structure.

Influence of film structure and composition on diffusion barrier performance of SiOx thin films deposited by PECVD

2006 ◽  
Vol 200 (14-15) ◽  
pp. 4564-4571 ◽  
Author(s):  
A. Grüniger ◽  
A. Bieder ◽  
A. Sonnenfeld ◽  
Ph. Rudolf von Rohr ◽  
U. Müller ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Film Structure ◽  
Barrier Performance

Influence of film structure on the electron energy loss spectra of GaAs thin films

1983 ◽  
Vol 18 (8) ◽  
pp. 1035-1044 ◽  
Author(s):  
H. Boudriot ◽  
B. Kubier ◽  
K. Deus ◽  
R. Gründler ◽  
E. Kusior
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Film Structure ◽  
Electron Energy Loss ◽  
Electron Energy Loss Spectra

Analysis of Long-Term Internal Stress and Film Structure of SiO2 Optical Thin Films

2010 ◽  
Author(s):  
T. Nishikawa ◽  
H. Ono ◽  
H. Murotani ◽  
Y. Iida ◽  
K. Okada
Keyword(s):  
Thin Films ◽  
Internal Stress ◽  
Film Structure

Optical Losses in Ferroelectric Oxide Thin Films: Is There Light at the End of the Tunnel?

1994 ◽  
Vol 361 ◽  
Author(s):  
D. K. Fork ◽  
F. Armani-Leplingard ◽  
J. J. Kingston
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Optical Loss ◽  
Film Surface ◽  
Film Structure ◽  
Surface Scattering ◽  
Morphological Development ◽  
Optical Losses ◽  
Force Microscopy ◽  
Device Applications

ABSTRACTOptical losses are a barrier to use of ferroelectric waveguide thin films. Losses of about 2 dB/cm will reduce the efficiency of a frequency doubler by over 50%. Achieving losses on this order in conjunction with other essential film properties is difficult. The optical loss has several origins, including absorption, mode leakage, internal scattering and surface scattering. When the film surface morphology is accurately known, it is possible to estimate the surface scattering component of the loss. We have employed atomic force microscopy and computer modeling to compute, and correlate the optical loss as a function of film thickness and wavelength. The results suggest upper limits to the morphological roughness for various device applications. For lithium niobate films on sapphire which are intended to frequency double into the blue part of the spectrum, the optimal film thickness is about 400 nm and the RMS roughness is constrained below about 1.0 nm, with some weak dependence on grain size. Although present growth techniques do not appear to achieve this level of surface flatness intrinsically, an understanding of the morphological development of the film structure may lead to improvements.

RuO2 films by metal-organic chemical vapor deposition

1993 ◽  
Vol 8 (10) ◽  
pp. 2644-2648 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Film Structure ◽  
Organic Chemical ◽  
Dilute Gas ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Pure and conducting RuO2 thin films were successfully deposited on Si, SiO2/Si, and quartz substrates at temperatures as low as 550 °C by a hot wall metal-organic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)ruthenium, Ru(C5H5)2, was used as the precursor. An optimized MOCVD process for conducting RuO2 thin films was established. Film structure was dependent on MOCVD process parameters such as bubbler temperature, dilute gas flow rates, deposition temperature, and total pressure. Either pure RuO2, pure Ru, or a RuO2 + Ru mixture was obtained under different deposition conditions. As-deposited pure RuO2 films were specular, crack-free, and well adhered on the substrates. The Auger electron spectroscopy depth profile showed good composition uniformity across the bulk of the films. The MOCVD RuO2 thin films exhibited a resistivity as low as 60 μω-cm. In addition, the reflectance of RuO2 in the NIR region had a metallic character.

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