scholarly journals Temperature dependence of three-dimensional domain wall arrangement in ferroelectric K0.9Na0.1NbO3 epitaxial thin films

2020 ◽  
Vol 128 (18) ◽  
pp. 184101
Author(s):  
Martin Schmidbauer ◽  
Laura Bogula ◽  
Bo Wang ◽  
Michael Hanke ◽  
Leonard von Helden ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Temperature Dependence ◽  
Three Dimensional ◽  
Epitaxial Thin Films ◽  
Dimensional Domain

scholarly journals Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
C. Borderon ◽  
A. E. Brunier ◽  
K. Nadaud ◽  
R. Renoud ◽  
M. Alexe ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Epitaxial Thin Films

Temperature dependence of dielectric functions in Yb2O3 and Lu2O3 epitaxial thin films on sapphire (0001)

2019 ◽  
Vol 59 (SC) ◽  
pp. SCCB13
Author(s):  
Takayuki Makino ◽  
Takaho Asai ◽  
Tomoya Takeuchi ◽  
Kenichi Kaminaga ◽  
Daichi Oka ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Epitaxial Thin Films

scholarly journals Direct Comparison of Structural and Electrical Properties of Epitaxial (001)-, (116)-, and (103)-Oriented SrBi2Ta2O9 Thin Films on SrTiO3 and Silicon Substrates

2000 ◽  
Vol 655 ◽  
Author(s):  
H. N. Lee ◽  
A. Pignolet ◽  
S. Senz ◽  
C. Harnagea ◽  
D. Hesse
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Bottom Electrode ◽  
Three Dimensional ◽  
Laser Deposition ◽  
Layered Perovskite ◽  
Silicon Substrates ◽  
Epitaxial Thin Films ◽  
Structural And Electrical Properties ◽  
First Time

AbstractAnisotropies of the properties of the bismuth-layered perovskite SrBi2Ta2O9 (SBT) have been investigated using epitaxial thin films grown by pulsed laser deposition both on conducting Nb-doped SrTiO3 (STO) single crystal substrates and on Si(100) substrates. It has been found that the three-dimensional epitaxy relationship SBT(001)∥STO(001); SBT [110] ∥STO[100] can be applied to all SBT thin films on STO substrates of (001), (011), and (111) orientations. An about 1.7 times larger remanent polarization was obtained in (103)-oriented SBT films than in that of (116) orientation, while the (001)-oriented SBT films revealed no ferroelectricity along their c-axis. Non-c-axis-oriented SBT films with a well-defined (116) orientation were also grown on silicon substrates for the first time. They were deposited on Si(100) covered with a conducting SrRuO3 (110) bottom electrode on a YSZ(100) buffer layer.

Temperature dependence of magnetic anisotropy of La0.8Ca0.2MnO3 epitaxial thin films

2000 ◽  
Vol 87 (9) ◽  
pp. 6764-6766 ◽  
Author(s):  
M. C. Smoak ◽  
P. A. Ryan ◽  
F. Tsui ◽  
T. K. Nath ◽  
R. A. Rao ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Temperature Dependence ◽  
Epitaxial Thin Films

Kinetic Roughening of Fe/Fe(100) Epitaxial Thin Films

1995 ◽  
Vol 399 ◽  
Author(s):  
M.C. Bartelt ◽  
J.W. Evans
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Nucleation And Growth ◽  
Step Edge ◽  
Epitaxial Thin Films ◽  
Two Dimensional ◽  
Kinetic Roughening ◽  
Adsorption Sites ◽  
Slope Selection ◽  
Model Predictions

ABSTRACTWe model kinetic roughening during Fe(100) homoepitaxy, where the formation of mounds with selected slope has been observed. Our model incorporates irreversible nucleation and growth of two-dimensional square islands in each layer, and a step-edge barrier to diffusive downward transport (which exceeds the barrier, Ed, to terrace diffusion by ESch). We estimate that ESch≈45meV compared with Ed≈450meV. To reproduce observed behavior, it is also essential for the model to incorporate "downward funneling" of depositing atoms to four-fold hollow adsorption sites, as this controls slope selection. Finally, we discuss model predictions for the non-monotonic temperature dependence of kinetic roughening.

ANOMALOUS NORMAL STATE PROPERTIES OF UNDERDOPED Bi 2212 THIN FILMS

2004 ◽  
Vol 18 (15) ◽  
pp. 2209-2214
Author(s):  
G. STIUFIUC ◽  
R. STIUFIUC ◽  
E. MACOCIAN ◽  
H. RAFFY ◽  
G. ILONCA
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Excitation Spectrum ◽  
Normal State ◽  
Characteristic Temperature ◽  
Epitaxial Thin Films ◽  
Normal State Properties ◽  
Upward Curvature ◽  
Significant Change

We investigate the effect of the opening of the pseudogap on the temperature dependence of the in-plane resistivity ρab(T) for Bi 2212 epitaxial thin films having different oxygen contents. Using successive annealing treatments we were able to bring the films from a maximally overdoped state (characterized by a T c of 63 K) to a strongly underdoped state (T c <10 K ). We also observed a significant change in the temperature dependence of the in-plane resistivity ρab(T). This dependence presents two major characteristics: for the overdoped sample we observed an upward curvature from linearity while for underdoped samples we observed a downturn from linearity starting from a characteristic temperature T* which will be associated with the opening of the pseudogap in the excitation spectrum.

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