Thermal and electrical transport at nanosized metallic contacts: In the diffusive–ballistic region at room temperature

2021 ◽  
Vol 92 (1) ◽  
pp. 015121
Author(s):  
Jianli Wang ◽  
Lu Chen ◽  
Cong Wang ◽  
Chengkun Mao ◽  
Hongmei Yu ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Room Temperature ◽  
Metallic Contacts

Structural and electrical properties of KCa2Nb5O15 ceramics

Open Physics ◽  
2008 ◽  
Vol 6 (2) ◽  
Author(s):  
Banarji Behera ◽  
Pratibindhya Nayak ◽  
Ram Choudhary
Keyword(s):  
Electrical Properties ◽  
Temperature Variation ◽  
Electrical Transport ◽  
Room Temperature ◽  
Complex Impedance ◽  
Tungsten Bronze ◽  
Transport Processes ◽  
Relaxation Processes ◽  
Orthorhombic Crystal Structure ◽  
Grain Distribution

AbstractA polycrystalline sample of KCa2Nb5O15 with tungsten bronze structure was prepared by a mixed oxide method at high temperature. A preliminary structural analysis of the compound showed an orthorhombic crystal structure at room temperature. Surface morphology of the compound shows a uniform grain distribution throughout the surface of the sample. Studies of temperature variation on dielectric response at various frequencies show that the compound has a transition temperature well above the room temperature (i.e., 105°C), which was confirmed by the polarization measurement. Electrical properties of the material have been studied using a complex impedance spectroscopy (CIS) technique in a wide temperature (31–500°C) and frequency (102–106 Hz) range that showed only bulk contribution and non-Debye type relaxation processes in the material. The activation energy of the compound (calculated from both the loss and modulus spectrum) is same, and hence the relaxation process may be attributed to the same type of charge carriers. A possible ‘hopping’ mechanism for electrical transport processes in the system is evident from the modulus analysis. A plot of dc conductivity (bulk) with temperature variation demonstrates that the compound exhibits Arrhenius type of electrical conductivity.

Transport Properties of Granular Nix(SiO2)100−x Thin Films

1990 ◽  
Vol 195 ◽  
Author(s):  
John R. Beamish ◽  
B.M. Patterson ◽  
K.M. Unruh
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Low Temperatures ◽  
Room Temperature ◽  
Volume Percent ◽  
Ni Content ◽  
Resistivity Minimum ◽  
Temperature Coefficient Of Resistivity ◽  
Sputter Deposited

ABSTRACTWe have studied the electrical transport behavior of sputter deposited Nix(SiO2)100−x thin films between room temperature and 100 mK and, at selected temperatures, in applied magnetic fields up to 6 T. As the Ni concentration x is reduced, the resistivity increases systematically. At a Ni concentration (nominal) of about x–70 atomic percent (38 volume percent) the room temperature coefficient of resistivity changes sign. For Ni concentrations greater than 70 percent the resistance first decreases with temperature then increases logarithmically at, low temperatures. This increase becomes smaller and the resistivity minimum moves to progressively lower temperatures as the Ni concentration increases. In films with less than x–70 percent Ni, the resistivity has a temperature dependence of the form ρ(T)–ρo exp \(To/T)α] between room temperature and about 5 K. The exponent a is about 1/2 and To increases with decreasing Ni content. Below 1 K, however, the resistivity increases much less rapidly, with a temperature dependence independent of Ni concentration. In all films the magnetoresistance is small and negative.

scholarly journals A room-temperature ferroelectric semimetal

2019 ◽  
Vol 5 (7) ◽  
pp. eaax5080 ◽  
Author(s):  
Pankaj Sharma ◽  
Fei-Xiang Xiang ◽  
Ding-Fu Shao ◽  
Dawei Zhang ◽  
Evgeny Y. Tsymbal ◽  
...  
Keyword(s):  
First Principles ◽  
Electrical Transport ◽  
Room Temperature ◽  
Electric Polarization ◽  
First Principles Calculations ◽  
New Class ◽  
Weyl Semimetal ◽  
Ferroelectric Domain Structure ◽  
Ferroelectric Domains ◽  
Crystalline Metal

Coexistence of reversible polar distortions and metallicity leading to a ferroelectric metal, first suggested by Anderson and Blount in 1965, has so far remained elusive. Electrically switchable intrinsic electric polarization, together with the direct observation of ferroelectric domains, has not yet been realized in a bulk crystalline metal, although incomplete screening by mobile conduction charges should, in principle, be possible. Here, we provide evidence that native metallicity and ferroelectricity coexist in bulk crystalline van der Waals WTe2by means of electrical transport, nanoscale piezoresponse measurements, and first-principles calculations. We show that, despite being a Weyl semimetal, WTe2has switchable spontaneous polarization and a natural ferroelectric domain structure at room temperature. This new class of materials has tantalizing potential for functional nanoelectronics applications.

Reinvestigation the Thermal and Electrical Transport Properties of Tl7Sb2

2013 ◽  
Vol 802 ◽  
pp. 284-288
Author(s):  
Anek Charoenphakdee ◽  
Adul Harnwangmuang ◽  
Tosawat Seetawan ◽  
Chesta Ruttanapun ◽  
Vittaya Amornkitbamrung ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Transport Properties ◽  
Electrical Transport ◽  
Room Temperature ◽  
Lattice Parameter ◽  
Electronic Contribution ◽  
Electrical Transport Properties ◽  
Space Group ◽  
Crystal System ◽  
Thallium Compounds

The authors examined the thermal and electrical transport properties of Tl7Sb2 at temperatures ranging from room temperature to 400 K. The crystal system of Tl7Sb2 is cubic with the lattice parameter a = 1.16053 nm and the space group is Im3m. The polycrystalline samples were prepared by melting stoichiometric amounts of thallium and antimony. Although, usually the thermal conductivity of thallium compounds is very low (<1 Wm-1K-1), that of Tl7Sb2 was relatively high (~13 Wm-1K-1 at room temperature). This is because of the large electronic contribution to the thermal conductivity.

Electrical Transport Properties of the Pentatelluride Materials Hfte5 and Zrte5

1997 ◽  
Vol 478 ◽  
Author(s):  
T. M. Tritt ◽  
M. L. Wilson ◽  
R. L. Littleton ◽  
C. Feger ◽  
J. Kolis ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Electrical Transport ◽  
Entire Range ◽  
Room Temperature ◽  
Polycrystalline Material ◽  
Polycrystalline Materials ◽  
Electrical Transport Properties ◽  
Low Dimensional ◽  
P Type

AbstractWe have measured the resistivity and thermopower of single crystals as well as polycrystalline pressed powders of the low-dimensional pentatelluride materials: HfTe5 and ZrTe5. We have performed these measurements as a function of temperature between 5K and 320K. In the single crystals there is a peak in the resistivity for both materials at a peak temperature, Tp where Tp ≈ 80K for HfTe5 and Tp ≈ 145K for ZrTe5. Both materials exhibit a large p-type thermopower around room temperature which undergoes a change to n-type below the peak. This data is similar to behavior observed previously in these materials. We have also synthesized pressed powders of polycrystalline pentatelluride materials, HfTe5 and ZrTe5. We have measured the resistivity and thermopower of these polycrystalline materials as a function of temperature between 5K and 320K. For the polycrystalline material, the room temperature thermopower for each of these materials is relatively high, +95 μV/K and +65 μV/K for HfTe5 and ZrTe5 respectively. These values compare closely to thermopower values for single crystals of these materials. At 77 K, the thermopower is +55 μV/K for HfTe5 and +35 μV/K for ZrTe5. In fact, the thermopower for the polycrystals decreases monotonically with temperature to T ≈ 5K, thus exhibiting p-type behavior over the entire range of temperature. As expected, the resistivity for the polycrystals is higher than the single crystal material, with values of 430 mΩ-cm and 24 mΩ-cm for Hfre5 and ZrTe5 respectively, compared to single crystal values of 0.35 mΩ-cm (HfTe5) and 1.0 mΩ-cm (ZrTe5). We have found that the peak in the resistivity evident in both single crystal materials is absent in these polycrystalline materials. We will discuss these materials in relation to their potential as candidates for thermoelectric applications.

Superconducting Properties of Amorphous Multilayer Metal-Semiconductor Composites

1984 ◽  
Vol 37 ◽  
Author(s):  
A. M. Kadin ◽  
R. W. Burkhardt ◽  
J. T. Chen ◽  
J. E. Keem ◽  
S. R. Ovshinsky
Keyword(s):  
Thin Film ◽  
Transition Metal ◽  
Electrical Transport ◽  
Room Temperature ◽  
Superconducting Properties ◽  
X Ray ◽  
Critical Magnetic Fields ◽  
X Ray Scattering ◽  
Interface Profile ◽  
Multilayer Metal

AbstractFollowing the earlier multilayer work of Ovshinsky and colleagues, we have fabricated thin-film samples consisting of alternating periodic layers of a transition metal (Nb, Mo, W) and a semiconducting element (Si, Ge, C) by sequential sputtering from two targets onto room-temperature substrates. The regular repeat spacing has been varied from 10 Å to more than 100 Å, with as many as several hundred layer pairs. Crystalline epitaxy was not required or even desired; many samples were largely amorphous as determined from x-ray scattering. Electrical transport measurements of superconducting properties have been carried out parallel to the layers. Samples exhibited highly anisotropic superconducting critical magnetic fields, with some values in excess of 200kG parallel to the layers. Evidence suggesting an asymmetric interface profile will be presented.

Quantization effects in the conductance of metallic contacts at room temperature

1996 ◽  
Vol 53 (3) ◽  
pp. 1022-1025 ◽  
Author(s):  
C. J. Muller ◽  
J. M. Krans ◽  
T. N. Todorov ◽  
M. A. Reed
Keyword(s):  
Room Temperature ◽  
Metallic Contacts

High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 283-286 ◽  
Author(s):  
Antonella Parisini ◽  
Andrea Parisini ◽  
Marco Gorni ◽  
Roberta Nipoti
Keyword(s):  
Electrical Transport ◽  
Room Temperature ◽  
Hole Transport ◽  
Variable Range Hopping ◽  
Electrical Transport Properties ◽  
Hopping Transport ◽  
Variable Range ◽  
Transmission Electron ◽  
Temperature Variable ◽  
Post Implantation

In this work, we confirm and extend the results of a previous study where a variable range hopping transport through localized impurity states has been found to dominate the electrical transport properties of 3×1020 cm-3 and 5×1020 cm-3 Al+ implanted 4H-SiC layers after 1950-2000 °C post implantation annealing. In this study, samples with longer annealing times have been taken into account. The temperature dependence of these sample conductivity follows a variable range hopping law, consistent with a nearly two-dimensional hopping transport of non-interacting carriers that in the highest doped samples, persists up to around room temperature. This result indicates that the hole transport becomes strongly anisotropic on increasing the doping level. At the origin of this unusual electrical behavior, may be the presence of basal plane stacking faults, actually observed by transmission electron microscopy in one of the 5×1020 cm-3 samples

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