scholarly journals The metal–insulator phase change in vanadium dioxide and its applications

2021 ◽  
Vol 129 (24) ◽  
pp. 240902
Author(s):  
Haichang Lu ◽  
Stewart Clark ◽  
Yuzheng Guo ◽  
John Robertson
2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Run Shi ◽  
Yong Chen ◽  
Xiangbin Cai ◽  
Qing Lian ◽  
Zhuoqiong Zhang ◽  
...  

AbstractA systematic study of various metal-insulator transition (MIT) associated phases of VO2, including metallic R phase and insulating phases (T, M1, M2), is required to uncover the physics of MIT and trigger their promising applications. Here, through an oxide inhibitor-assisted stoichiometry engineering, we show that all the insulating phases can be selectively stabilized in single-crystalline VO2 beams at room temperature. The stoichiometry engineering strategy also provides precise spatial control of the phase configurations in as-grown VO2 beams at the submicron-scale, introducing a fresh concept of phase transition route devices. For instance, the combination of different phase transition routes at the two sides of VO2 beams gives birth to a family of single-crystalline VO2 actuators with highly improved performance and functional diversity. This work provides a substantial understanding of the stoichiometry-temperature phase diagram and a stoichiometry engineering strategy for the effective phase management of VO2.


AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035120
Author(s):  
Kazuma Tamura ◽  
Teruo Kanki ◽  
Shun Shirai ◽  
Hidekazu Tanaka ◽  
Yoshio Teki ◽  
...  

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Valeria Bragaglia ◽  
Fabrizio Arciprete ◽  
Wei Zhang ◽  
Antonio Massimiliano Mio ◽  
Eugenio Zallo ◽  
...  

Abstract Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.


Author(s):  
Muhammad Fayyaz Kashif ◽  
Tiziana Stomeo ◽  
Francesco Guido ◽  
Maria A. Vincenti ◽  
Irene Vassalini ◽  
...  

Author(s):  
Crunteanu Aurelian ◽  
VK Thalakkatukalathil Vinod ◽  
Orlianges Jean-Christophe ◽  
Bessaudou Annie

Plasmonics ◽  
2019 ◽  
Vol 14 (5) ◽  
pp. 1283-1288
Author(s):  
A. Tognazzi ◽  
A. Locatelli ◽  
M. A. Vincenti ◽  
C. Giannetti ◽  
C. De Angelis

2020 ◽  
Vol 22 (24) ◽  
pp. 13474-13478
Author(s):  
Haichang Lu ◽  
Stewart Clark ◽  
Yuzheng Guo ◽  
John Robertson

We show that a non-collinear spin density GGA+U functional calculation can describe the enthalpy difference (latent heat) of ΔE0 = −44.2 meV per formula unit, similar to the experimental value, between the paramagnetic rutile and the M1 phases of VO2.


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