scholarly journals Performance Comparison of Phase Change Materials and Metal-Insulator Transition Materials for Direct Current and Radio Frequency Switching Applications

Technologies ◽  
2018 ◽  
Vol 6 (2) ◽  
pp. 48 ◽  
Author(s):  
Protap Mahanta ◽  
Mohiuddin Munna ◽  
Ronald Coutu
Keyword(s):  
Radio Frequency ◽  
Phase Change ◽  
Direct Current ◽  
Phase Change Materials ◽  
Performance Comparison ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Valeria Bragaglia ◽  
Fabrizio Arciprete ◽  
Wei Zhang ◽  
Antonio Massimiliano Mio ◽  
Eugenio Zallo ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Random Access ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Reversible Transformation ◽  
Vacancy Ordering

Abstract Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

scholarly journals Erratum: Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Valeria Bragaglia ◽  
Fabrizio Arciprete ◽  
Wei Zhang ◽  
Antonio Massimiliano Mio ◽  
Eugenio Zallo ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Vacancy Ordering

scholarly journals A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials

Materials ◽  
2017 ◽  
Vol 10 (8) ◽  
pp. 862 ◽  
Author(s):  
Jiang-Jing Wang ◽  
Ya-Zhi Xu ◽  
Riccardo Mazzarello ◽  
Matthias Wuttig ◽  
Wei Zhang
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Metal-insulator transition and doping-induced phase change in Ge 2 Sb 2 Se 5 x Te 5 − 5 x

2020 ◽  
Vol 117 (19) ◽  
pp. 193503
Author(s):  
Zhenyang Xu ◽  
Keeseong Park ◽  
John A. Schneeloch ◽  
Despina Louca
Keyword(s):  
Phase Change ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator
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