Formation of ultra-thin Ge1−xSnx/Ge1−x−ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode
2021 ◽
Vol 42
(4)
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pp. 426-445
Keyword(s):
Keyword(s):
2010 ◽
Vol 39
(5)
◽
pp. 331-339
◽
Keyword(s):