Formation of ultra-thin Ge1−xSnx/Ge1−x−ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode

2020 ◽  
Vol 117 (23) ◽  
pp. 232104
Author(s):  
Galih Ramadana Suwito ◽  
Masahiro Fukuda ◽  
Edi Suprayoga ◽  
Masahiro Ohtsuka ◽  
Eddwi Hesky Hasdeo ◽  
...  
2012 ◽  
Vol E95.C (5) ◽  
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Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA

2010 ◽  
Vol 39 (5) ◽  
pp. 331-339 ◽  
Author(s):  
N. V. Alkeev ◽  
S. V. Averin ◽  
A. A. Dorofeev ◽  
N. B. Gladysheva ◽  
M. Yu. Torgashin

2001 ◽  
Vol 79 (8) ◽  
pp. 1190-1192 ◽  
Author(s):  
A. T. Hanbicki ◽  
R. Magno ◽  
S.-F. Cheng ◽  
Y. D. Park ◽  
A. S. Bracker ◽  
...  

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