Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications

Chunxue Hao; Fusheng Wen; Jianyong Xiang; Shijun Yuan; Bingchao Yang; Lei Li; Wenhong Wang; Zhongming Zeng; Limin Wang; Zhongyuan Liu; Yongjun Tian

doi:10.1002/adfm.201504187

Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications

Advanced Functional Materials ◽

10.1002/adfm.201504187 ◽

2016 ◽

Vol 26 (12) ◽

pp. 2016-2024 ◽

Cited By ~ 104

Author(s):

Chunxue Hao ◽

Fusheng Wen ◽

Jianyong Xiang ◽

Shijun Yuan ◽

Bingchao Yang ◽

...

Keyword(s):

Thin Films ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Black Phosphorous ◽

Memory Applications

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Transition metal oxide thin films for nonvolatile resistive random access memory applications

Journal of the Ceramic Society of Japan ◽

10.2109/jcersj2.117.929 ◽

2009 ◽

Vol 117 (1369) ◽

pp. 929-934 ◽

Cited By ~ 13

Author(s):

Dinghua BAO

Keyword(s):

Thin Films ◽

Transition Metal ◽

Metal Oxide ◽

Random Access ◽

Random Access Memory ◽

Transition Metal Oxide ◽

Resistive Random Access Memory ◽

Access Memory ◽

Metal Oxide Thin Films ◽

Memory Applications

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First-principles study of resistive random access memory based on single-layer black phosphorous resistive layer

Journal of Applied Physics ◽

10.1063/5.0024513 ◽

2020 ◽

Vol 128 (21) ◽

pp. 215702

Author(s):

Yuehua Dai ◽

Jianhua Gao ◽

Lihua Huang ◽

Renjie Ding ◽

Peng Wang ◽

...

Keyword(s):

First Principles ◽

Random Access ◽

Single Layer ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Resistive Layer ◽

First Principles Study ◽

Black Phosphorous

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Resistive random access memory characteristics of NiO thin films with an oxygen-deficient NiO0.95 layer

Ceramics International ◽

10.1016/j.ceramint.2020.12.064 ◽

2020 ◽

Author(s):

Yoonho Ahn ◽

Jong Yeog Son

Keyword(s):

Thin Films ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Memory Characteristics

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Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2020.154126 ◽

2020 ◽

Vol 826 ◽

pp. 154126 ◽

Cited By ~ 4

Author(s):

Tsung-Ming Tsai ◽

Chun-Chu Lin ◽

Wen-Chung Chen ◽

Cheng-Hsien Wu ◽

Chih-Cheng Yang ◽

...

Keyword(s):

Thin Films ◽

Nickel Oxide ◽

Resistive Switching ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Current Level ◽

Oxide Thin Films ◽

Access Memory ◽

Nickel Oxide Thin Films

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Resistive Switching of Al/Sol-Gel ZnO/Al Devices for Resistive Random Access Memory Applications

2009 International Conference on Advances in Computing, Control, and Telecommunication Technologies ◽

10.1109/act.2009.122 ◽

2009 ◽

Cited By ~ 1

Author(s):

Saniya Deshpande ◽

Vineet Vijayakrishnan Nair

Keyword(s):

Resistive Switching ◽

Sol Gel ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Memory Applications

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Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1953687 ◽

2005 ◽

Vol 23 (5) ◽

pp. 1309-1313 ◽

Cited By ~ 99

Author(s):

Jae-Wan Park ◽

Jong-Wan Park ◽

Dal-Young Kim ◽

Jeon-Kook Lee

Keyword(s):

Nickel Oxide ◽

Resistive Switching ◽

Oxide Films ◽

Random Access ◽

Random Access Memory ◽

Reactive Sputtering ◽

Resistive Random Access Memory ◽

Access Memory ◽

Memory Applications ◽

Nickel Oxide Films

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Insertion of a Si layer to reduce operation current for resistive random access memory applications

Applied Physics Letters ◽

10.1063/1.4812304 ◽

2013 ◽

Vol 102 (25) ◽

pp. 252902 ◽

Cited By ~ 12

Author(s):

Yu-Ting Chen ◽

Ting-Chang Chang ◽

Han-Kuang Peng ◽

Hsueh-Chih Tseng ◽

Jheng-Jie Huang ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Memory Applications

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Bipolar Resistive Switching Characteristics of TiN/HfO x /ITO Devices for Resistive Random Access Memory Applications

Chinese Physics Letters ◽

10.1088/0256-307x/30/10/107302 ◽

2013 ◽

Vol 30 (10) ◽

pp. 107302 ◽

Cited By ~ 5

Author(s):

Ting-Ting Tan ◽

Xi Chen ◽

Ting-Ting Guo ◽

Zheng-Tang Liu

Keyword(s):

Resistive Switching ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Bipolar Resistive Switching ◽

Switching Characteristics ◽

Memory Applications

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Electrical Characteristics of Ge$_{25}$Se$_{75}$ Thin Films by Ag Ion Doping Methods for Resistance Random Access Memory Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.09mf04 ◽

2012 ◽

Vol 51 ◽

pp. 09MF04

Author(s):

Ki-Hyun Nam ◽

Jang-Han Kim ◽

Hong-Bay Chung

Keyword(s):

Thin Films ◽

Random Access ◽

Random Access Memory ◽

Electrical Characteristics ◽

Access Memory ◽

Resistance Random Access Memory ◽

Ion Doping ◽

Memory Applications

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Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application

Thin Solid Films ◽

10.1016/j.tsf.2012.11.051 ◽

2013 ◽

Vol 533 ◽

pp. 54-60 ◽

Cited By ~ 8

Author(s):

E. Souchier ◽

M.-P. Besland ◽

J. Tranchant ◽

B. Corraze ◽

P. Moreau ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

Access Memory

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