X-ray reciprocal space mapping study of domain evolution with electrical poling in BaTiO3 single crystal

2020 ◽  
Author(s):  
Akash Surampalli ◽  
V. Raghavendra Reddy
Keyword(s):  
Single Crystal ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Mapping Study ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Domain Evolution

X-ray reciprocal space mapping study on semipolar InAlN films coherently grown on ZnO substrates

2011 ◽  
Vol 5 (10-11) ◽  
pp. 400-402
Author(s):  
Tomofumi Kajima ◽  
Atsushi Kobayashi ◽  
Kazuma Shimomoto ◽  
Kohei Ueno ◽  
Tomoaki Fujii ◽  
...  
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Mapping Study ◽  
Reciprocal Space Mapping ◽  
X Ray

scholarly journals X-ray diffraction reciprocal space mapping study of the thin film phase of pentacene

2007 ◽  
Vol 90 (18) ◽  
pp. 181930 ◽  
Author(s):  
Hiroyuki Yoshida ◽  
Katsuhiko Inaba ◽  
Naoki Sato
Keyword(s):  
Thin Film ◽  
Space Mapping ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Mapping Study ◽  
Reciprocal Space Mapping ◽  
X Ray

scholarly journals X-Ray Diffraction Reciprocal Space Mapping Study of Modulated Crystal Structures in 10M Ni-Mn-Ga Martensitic Phase

2009 ◽  
Vol 635 ◽  
pp. 63-68 ◽  
Author(s):  
Yan Ling Ge ◽  
Ilkka Aaltio ◽  
Outi Söderberg ◽  
Simo Pekka Hannula
Keyword(s):  
Large Range ◽  
Bulk Material ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Martensitic Phase ◽  
X Ray Diffraction ◽  
Mapping Study ◽  
Reciprocal Space Mapping ◽  
Experimental Procedure ◽  
X Ray

The 10M modulated crystal structure in Ni-Mn-Ga martensitic phase with about 0.5 MPa twinning stress, was studied by X-ray diffraction reciprocal space mapping (RSM). The experimental procedure is established for collecting large range of RSM with scattering planes inclined to the surface of specimen. The investigation focused on the superlattice reflections caused by the modulation, which always appeared in two <110> directions in bulk material. The distribution of two modulation domains varies with scattering locations.

Time-resolved X-ray reciprocal space mapping of the crystal under external electric field

2018 ◽  
Vol 189 (02) ◽  
pp. 187-194 ◽  
Author(s):  
Nikita V. Marchenkov ◽  
Anton G. Kulikov ◽  
Ivan I. Atknin ◽  
Arsen A. Petrenko ◽  
Alexander E. Blagov ◽  
...  
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
Time Resolved ◽  
X Ray

Structural modulation on multilayered bismuth cuprate observed by x-ray reciprocal space mapping

2005 ◽  
Vol 97 (10) ◽  
pp. 103904 ◽  
Author(s):  
Satoru Kaneko ◽  
Kensuke Akiyama ◽  
Yoshitada Shimizu ◽  
Hiroyasu Yuasa ◽  
Yasuo Hirabayashi ◽  
...  
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Structural Modulation

X-ray reciprocal space mapping of a (112) oriented HgTe/Hg0.1Cd0.9Te superlattice

1997 ◽  
Vol 71 (13) ◽  
pp. 1822-1824 ◽  
Author(s):  
M. Li ◽  
C. R. Becker ◽  
R. Gall ◽  
W. Faschinger ◽  
G. Landwehr
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

Reciprocal Space Mapping of X-Ray Diffraction Intensity of GaN-Based Laser Diodes Grown on GaN Substrates

2003 ◽  
Vol 798 ◽  
Author(s):  
K. Tachibana ◽  
Y. Harada ◽  
S. Saito ◽  
S. Nunoue ◽  
H. Katsuno ◽  
...  
Keyword(s):  
Output Power ◽  
Sapphire Substrate ◽  
Light Output ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Light Output Power ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.

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