Synthesis and characterization of AlN thin films deposited using DC and RF magnetron sputtering

2020 ◽  
Author(s):  
Layanta Behera ◽  
Nidhi Pandey ◽  
Mukul Gupta
2018 ◽  
Vol 314 ◽  
pp. 36-40
Author(s):  
Cortney R. Kreller ◽  
James A. Valdez ◽  
Terry G. Holesinger ◽  
Rangachary Mukundan ◽  
Eric L. Brosha ◽  
...  

2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.


Author(s):  
Thyago Santos Braga ◽  
Marcos Massi ◽  
Argemiro Soares Silva Sobrinho ◽  
Fabio Dondeo Origo ◽  
Choyu Otani

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