Influence of erbium doping on electrical properties and thermal sensitivity of tin oxide based temperature sensor

2020 ◽  
Author(s):  
Manreet Kaur Sohal ◽  
Sahil Gasso ◽  
Ravi Chand Singh ◽  
Aman Mahajan
Keyword(s):  
Electrical Properties ◽  
Tin Oxide ◽  
Temperature Sensor ◽  
Thermal Sensitivity ◽  
Erbium Doping

scholarly journals Black Phosphorus-Molybdenum Disulfide Hetero-Junctions Formed with Ink-Jet Printing for Potential Solar Cell Applications with Indium-Tin-Oxide

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 560
Author(s):  
Ravindra Ketan Mehta ◽  
Anupama Bhat Kaul
Keyword(s):  
Electrical Properties ◽  
Molybdenum Disulfide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Cost Effective ◽  
Contact Materials ◽  
Ito Glass ◽  
The Future ◽  
Potential Applications ◽  
Jet Printing

In this work, we implemented liquid exfoliation to inkjet-print two-dimensional (2D) black phosphorous (BP) and molybdenum disulfide (MoS2) p–n heterojunctions on a standard indium tin oxide (ITO) glass substrate in a vertical architecture. We also compared the optical and electrical properties of the inkjet-printed BP layer with that of the MoS2 and the electrical properties of the mechanically exfoliated MoS2 with that of the inkjet-printed MoS2. We found significant differences in the optical characteristics of the inkjet-printed BP and MoS2 layers attributed to the differences in their underlying crystal structure. The newly demonstrated liquid exfoliated and inkjet-printed BP–MoS2 2D p–n junction was also compared with previous reports where mechanically exfoliated BP–MoS2 2D p–n junction were used. The electronic transport properties of mechanically exfoliated MoS2 membranes are typically better compared to inkjet-printed structures but inkjet printing offers a cost-effective and quicker way to fabricate heterostructures easily. In the future, the performance of inkjet-printed structures can be further improved by employing suitable contact materials, amongst other factors such as modifying the solvent chemistries. The architecture reported in this work has potential applications towards building solar cells with solution processed 2D materials in the future.

Annealing effect on structural, optical and electrical properties of pure and Mg doped tin oxide thin films

2013 ◽  
Vol 24 (12) ◽  
pp. 4925-4931
Author(s):  
Syed Mansoor Ali ◽  
Jan Muhammad ◽  
Syed Tajammul Hussain ◽  
Syed Danish Ali ◽  
Naeem Ur Rehman ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Annealing Effect ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Mg Doped

Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films

2018 ◽  
Vol 52 (9) ◽  
pp. 1118-1122 ◽  
Author(s):  
A. V. Sitnikov ◽  
O. V. Zhilova ◽  
I. V. Babkina ◽  
V. A. Makagonov ◽  
Yu. E. Kalinin ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Tin Oxide ◽  
Oxide Films ◽  
Tin Oxide Films

Enhanced charge collection with passivation of the tin oxide layer in planar perovskite solar cells

2017 ◽  
Vol 5 (25) ◽  
pp. 12729-12734 ◽  
Author(s):  
Yonghui Lee ◽  
Sanghyun Paek ◽  
Kyung Taek Cho ◽  
Emad Oveisi ◽  
Peng Gao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Oxide Layer ◽  
Tin Oxide ◽  
Perovskite Solar Cells ◽  
Charge Collection

The morphological, opto-physical and electrical properties of the SnO2layer in perovskite solar cells are investigated.

scholarly journals The Effects of Sn-Doping on a-Fe2O3 Nanostructures Properties

2018 ◽  
Vol 7 (3.11) ◽  
pp. 34
Author(s):  
W R.W. Ahmad ◽  
M H. Mamat ◽  
A S. Zoolfakar ◽  
Z Khusaimi ◽  
M M. Yusof ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Glass Substrate ◽  
Optical And Electrical Properties ◽  
Immersion Method ◽  
Coated Glass Substrate ◽  
Sn Doping ◽  
Sn Dopant ◽  
Surface Morphologies

In this study, undoped and Sn-doped hematite (α-Fe2O3) nanostructures with variation of Sn (0.5, 1, 2, 3 at. %) were deposited on fluorine doped tin oxide (FTO) coated glass substrate using sonicated immersion method. The effect of Sn-dopant on structural and crystallinity properties were investigated by characterizing FESEM and XRD respectively, while the optical properties were measured by UV-Vis-NIR spectrometer. The surface morphologies from FESEM have shown that the hematite nanostructures were grown uniformly in all samples. However, as the dopant atomic percentage increases, the amount of hematite nanostructure being grown on the FTO decreases. Results demonstrated that the amount of Sn-doping was undoubtedly influence the structural, optical and electrical properties of hematite nanostructures.  

scholarly journals Effect Of Fluorine Doping On The Structural, Optical And Electrical Properties Of Spin Coated Tin Oxide Thin Films For Solar Cells Application

2019 ◽  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Optical And Electrical Properties ◽  
Fluorine Doping ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.

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