scholarly journals Effect of phonon-boundary scattering on phonon-drag factor in Seebeck coefficient of Si wire

AIP Advances ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 075015
Author(s):  
K. Fauziah ◽  
Y. Suzuki ◽  
T. Nogita ◽  
Y. Kamakura ◽  
T. Watanabe ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Boundary Scattering ◽  
Phonon Drag ◽  
Drag Factor

Study on Phonon Drag Effect and Phonon Transport in Thin Si-on-Insulator Layers

2015 ◽  
Vol 1117 ◽  
pp. 86-89 ◽  
Author(s):  
Hiroya Ikeda ◽  
Takuro Oda ◽  
Yuhei Suzuki ◽  
Yoshinari Kamakura ◽  
Faiz Salleh
Keyword(s):  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Phonon Scattering ◽  
Phonon Transport ◽  
Infrared Photodetector ◽  
Phonon Drag ◽  
Drag Effect ◽  
Phonon Modes ◽  
Highly Sensitive ◽  
Insulator Layers

The Seebeck coefficient of P-doped ultrathin Si-on-insulator (SOI) layers is investigated for the application to a highly-sensitive thermopile infrared photodetector. It is found that the Seebeck coefficient originating from the phonon drag is significant in the lightly doped region and depends on the carrier concentration with increasing carrier concentration above ~5×1018 cm-3. On the basis of Seebeck coefficient calculations considering both electron and phonon distribution, the phonon-drag part of SOI Seebeck coefficient is mainly governed by the phonon transport, in which the phonon-phonon scattering process is dominant rather than the crystal boundary scattering even in the SOI layer with a thickness of 10 nm. This fact suggests that the phonon-drag Seebeck coefficient is influenced by the phonon modes different from the thermal conductivity.

scholarly journals Phonon-drag Contribution to Seebeck Coefficient of Ge-on-insulator Substrate Fabricated by Wafer Bonding Process

2015 ◽  
Vol 19 (1) ◽  
pp. 21 ◽  
Author(s):  
Veerappan Manimuthu ◽  
Shoma Yoshida ◽  
Yuhei Suzuki ◽  
Faiz Salleh ◽  
Mukannan Arivanandhan ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Phonon Drag ◽  
Insulator Substrate

scholarly journals Thermoelectric Transport in a Three-Dimensional HgTe Topological Insulator

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3364
Author(s):  
Gennady M. Gusev ◽  
Ze D. Kvon ◽  
Alexander D. Levin ◽  
Nikolay N. Mikhailov
Keyword(s):  
Seebeck Coefficient ◽  
Topological Insulator ◽  
Fermi Energy ◽  
Three Dimensional ◽  
Phonon Drag ◽  
Thermoelectric Transport ◽  
Bulk Band ◽  
Theory And Experiment

The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron–3D hole scattering.

scholarly journals Nanometrology: Absolute Seebeck coefficient of individual silver nanowires

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
M. Kockert ◽  
D. Kojda ◽  
R. Mitdank ◽  
A. Mogilatenko ◽  
Z. Wang ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Bulk Material ◽  
Silver Nanowires ◽  
Mean Free Path ◽  
Phonon Drag ◽  
Nanowire Diameter ◽  
The Absolute ◽  
Electron Mean Free Path ◽  
Absolute Seebeck Coefficient

AbstractThermoelectric phenomena can be strongly modified in nanomaterials. The determination of the absolute Seebeck coefficient is a major challenge for metrology with respect to micro- and nanostructures due to the fact that the transport properties of the bulk material are no more valid. Here, we demonstrate a method to determine the absolute Seebeck coefficient S of individual metallic nanowires. For highly pure and single crystalline silver nanowires, we show the influence of nanopatterning on S in the temperature range between 16 K and 300 K. At room temperature, a nanowire diameter below 200 nm suppresses S by 50% compared to the bulk material to less than S = 1 μVK−1, which is attributed to the reduced electron mean free path. The temperature dependence of the absolute Seebeck coefficient depends on size effects. Thermodiffusion and phonon drag are reduced with respect to the bulk material and the ratio of electron-phonon to phonon-phonon interaction is significantly increased.

PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS

2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Low Temperatures ◽  
Room Temperature ◽  
Phonon Drag ◽  
Drag Effect ◽  
Thermoelectric Power Factor

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.

Phonon-Drag Contribution to Seebeck Coefficient in P-Type Si, Ge and Si1-xGex

2017 ◽  
Vol E100.C (5) ◽  
pp. 482-485 ◽  
Author(s):  
Veerappan MANIMUTHU ◽  
Muthusamy OMPRAKASH ◽  
Mukannan ARIVANANDHAN ◽  
Faiz SALLEH ◽  
Yasuhiro HAYAKAWA ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Phonon Drag ◽  
P Type

scholarly journals The Seebeck coefficient and phonon drag in silicon

2014 ◽  
Vol 116 (24) ◽  
pp. 245102 ◽  
Author(s):  
G. D. Mahan ◽  
L. Lindsay ◽  
D. A. Broido
Keyword(s):  
Seebeck Coefficient ◽  
Phonon Drag

Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H-SiC: Experiment and Simulation

2003 ◽  
Vol 433-436 ◽  
pp. 407-410 ◽  
Author(s):  
V. Bikbajevas ◽  
Vytautas Grivickas ◽  
M. Stölzer ◽  
Enn Velmre ◽  
Andres Udal ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Phonon Drag ◽  
Drag Effect ◽  
Experiment And Simulation

Phonon-Drag Effect on Seebeck Coefficient in Co-Doped Si Wire with Submicrometer-Scaled Cross Section

2017 ◽  
Vol E100.C (5) ◽  
pp. 486-489 ◽  
Author(s):  
Yuhei SUZUKI ◽  
Faiz SALLEH ◽  
Yoshinari KAMAKURA ◽  
Masaru SHIMOMURA ◽  
Hiroya IKEDA
Keyword(s):  
Seebeck Coefficient ◽  
Cross Section ◽  
Phonon Drag ◽  
Drag Effect ◽  
Co Doped
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