Phonon-Drag Contribution to Seebeck Coefficient in P-Type Si, Ge and Si1-xGex

2017 ◽  
Vol E100.C (5) ◽  
pp. 482-485 ◽  
Author(s):  
Veerappan MANIMUTHU ◽  
Muthusamy OMPRAKASH ◽  
Mukannan ARIVANANDHAN ◽  
Faiz SALLEH ◽  
Yasuhiro HAYAKAWA ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Phonon Drag ◽  
P Type

Electronic Transport Properties of Hot-Pressed B6Si

1987 ◽  
Vol 97 ◽  
Author(s):  
C. Wood ◽  
D. Emin ◽  
R. S. Feigelson ◽  
I. D. R. Mackinnon
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Electronic Transport ◽  
Hall Mobility ◽  
Anomalous Behavior ◽  
Nominal Composition ◽  
Electronic Transport Properties ◽  
Increasing Temperature ◽  
P Type

ABSTRACTMeasurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300 K to -1300 K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior.

scholarly journals Effect of Microwave Processing and Glass Inclusions on Thermoelectric Properties of P-Type Bismuth Antimony Telluride Alloys for Wearable Applications

Energies ◽  
2020 ◽  
Vol 13 (17) ◽  
pp. 4524
Author(s):  
Amin Nozariasbmarz ◽  
Daryoosh Vashaee
Keyword(s):  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Room Temperature ◽  
Electronic Devices ◽  
Microwave Processing ◽  
Glass Inclusion ◽  
Wearable Electronic ◽  
P Type ◽  
Wearable Electronic Devices ◽  
Body Heat

Depending on the application of bismuth telluride thermoelectric materials in cooling, waste heat recovery, or wearable electronics, their material properties, and geometrical dimensions should be designed to optimize their performance. Recently, thermoelectric materials have gained a lot of interest in wearable electronic devices for body heat harvesting and cooling purposes. For efficient wearable electronic devices, thermoelectric materials with optimum properties, i.e., low thermal conductivity, high Seebeck coefficient, and high thermoelectric figure-of-merit (zT) at room temperature, are demanded. In this paper, we investigate the effect of glass inclusion, microwave processing, and annealing on the synthesis of high-performance p-type (BixSb1−x)2Te3 nanocomposites, optimized specially for body heat harvesting and body cooling applications. Our results show that glass inclusion could enhance the room temperature Seebeck coefficient by more than 10% while maintaining zT the same. Moreover, the combination of microwave radiation and post-annealing enables a 25% enhancement of zT at room temperature. A thermoelectric generator wristband, made of the developed materials, generates 300 μW power and 323 mV voltage when connected to the human body. Consequently, MW processing provides a new and effective way of synthesizing p-type (BixSb1−x)2Te3 alloys with optimum transport properties.

Study on Phonon Drag Effect and Phonon Transport in Thin Si-on-Insulator Layers

2015 ◽  
Vol 1117 ◽  
pp. 86-89 ◽  
Author(s):  
Hiroya Ikeda ◽  
Takuro Oda ◽  
Yuhei Suzuki ◽  
Yoshinari Kamakura ◽  
Faiz Salleh
Keyword(s):  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Phonon Scattering ◽  
Phonon Transport ◽  
Infrared Photodetector ◽  
Phonon Drag ◽  
Drag Effect ◽  
Phonon Modes ◽  
Highly Sensitive ◽  
Insulator Layers

The Seebeck coefficient of P-doped ultrathin Si-on-insulator (SOI) layers is investigated for the application to a highly-sensitive thermopile infrared photodetector. It is found that the Seebeck coefficient originating from the phonon drag is significant in the lightly doped region and depends on the carrier concentration with increasing carrier concentration above ~5×1018 cm-3. On the basis of Seebeck coefficient calculations considering both electron and phonon distribution, the phonon-drag part of SOI Seebeck coefficient is mainly governed by the phonon transport, in which the phonon-phonon scattering process is dominant rather than the crystal boundary scattering even in the SOI layer with a thickness of 10 nm. This fact suggests that the phonon-drag Seebeck coefficient is influenced by the phonon modes different from the thermal conductivity.

scholarly journals Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1435
Author(s):  
Kaneez Fatima ◽  
Hadia Noor ◽  
Adnan Ali ◽  
Eduard Monakhov ◽  
Muhammad Asghar
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Silicon Germanium ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
The Past ◽  
High Power Factor ◽  
Different Temperatures ◽  
P Type ◽  
Quartz Substrates

Over the past few years, thermoelectrics have gained interest with regard to thermoelectricity interconversion. The improvement in the efficiency of the thermoelectric material at an ambient temperature is the main problem of research. In this work, silicon–germanium (SiGe) thin films, owing to superior properties such as nontoxicity, high stability, and their integrability with silicon technologies, were studied for thermoelectric applications. P-type SiGe thin films were deposited on quartz substrates by DC/RF magnetron sputtering and annealed at three different temperatures for 1 hour. Significant enhancement in the Seebeck coefficient was achieved for the sample annealed at 670 °C. A high power factor of 4.1 μWcm−1K−2 was obtained at room temperature.

Improvement on Thermoelectric Characteristics of Layered Nanostructure by Ion Beam Bombardment

2006 ◽  
Vol 929 ◽  
Author(s):  
Bangke Zheng ◽  
S. Budak ◽  
C. Muntele ◽  
Z. Xiao ◽  
S. Celaschi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Electric Conductivity ◽  
Ion Beam ◽  
Thermo Electric ◽  
Super Lattice ◽  
Before And After ◽  
The Cross ◽  
Nano Cluster ◽  
P Type

ABSTRACTWe made p-type nanoscale super lattice thermoelectric cooling devices which consist of multiple periodic layers of Si1−x Gex / Si, The thickness of each layer ranges between 10 and 50 nm. The super lattice was bombarded by 5 MeV Si ion with different fluencies aiming to form nano-cluster quantum dot structures. We estimated the thermo-electric efficiency of the so fabricated devices, measuring the thin film cross plane thermal conductivity by the 3rd harmonic method, measuring the cross plane Seebeck coefficient, and finally measuring the cross plane electric conductivity before and after ion bombardment. As predicted, the thermo-electric Figure of Merit of the films increases with increasing Si ion fluencies. In addition to the effect of quantum well confinement of the phonon transmission, the nano-scale crystal quantum dots produced by the incident Si beam further adversely affects the thermal conductivity by absorbing and dissipating phonon along the lattice, and therefore further reduces the cross plane thermal conductivity, This process increases the electron density of state therefore increasing Seebeck coefficient, and the electric conductivity.

Flexible film-based thermoelectric generators

MRS Advances ◽  
2019 ◽  
Vol 4 (30) ◽  
pp. 1691-1697
Author(s):  
Shuping Lin ◽  
Wei Zeng ◽  
Lisha Zhang ◽  
Xiaoming Tao
Keyword(s):  
Seebeck Coefficient ◽  
Thermoelectric Generator ◽  
Low Cost ◽  
Thermoelectric Generators ◽  
Polystyrene Sulfonate ◽  
Paper Substrate ◽  
Thermoelectric Element ◽  
Flexible Film ◽  
P Type ◽  
Flexible Thermoelectric

ABSTRACT:The present work highlights the progress in the field of flexible thermoelectric generator (f-TEGs) fabricated by 3-D printing strategy on the typing paper substrate. In this study, printable thermoelectric paste was developed. The dimension of each planer thermoelectric element is 30mm*4mm with a thickness of 50 μm for P-type Bismuth Tellurium (Bi2Te3)-based/ poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) leg. A single thermoleg with this dimension can generate a voltage of 5.38 mV at a temperature difference of 70 K. The calculated Seebeck Coefficient of a single thermoleg is 76.86 μV/K. This work demonstrates that low-cost printing technology is promising for the fabrication of f-TEGs.

scholarly journals Paper 1: “Cement as a Thermoelectric Material,” [J. Mater. Res. 15, 2844-2848 (2000)] And Paper 2: “Rectifying and Thermocouple Junctions Based on Portland Cement,” J. Mater. Res. 16, 1989-1993 (2001)]

2004 ◽  
Vol 19 (4) ◽  
pp. 1294-1294 ◽  
Author(s):  
Sihai Wen ◽  
D.D.L. Chung
Keyword(s):  
Portland Cement ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Carbon Fibers ◽  
Thermoelectric Material ◽  
Steel Fibers ◽  
Cement Pastes ◽  
The Absolute ◽  
P Type ◽  
Wrong Sign

In the two papers listed above, the conversion of the Seebeck coefficient (relative to copper) to the absolute thermoelectric power was done by using the wrong sign of the absolute thermoelectric power of copper (2.34 μV/°C). The corrected tables are shown below for both papers. The correction means that plain cement paste is slightly p-type rather than slightly n-type. In addition, it means that cement pastes with carbon fibers are more p-type and those with steel fibers are less n-type than reported. Note in Table III of Paper 2 that all cement pastes are p-type except for paste (ii). Note in Table IV of Paper 2 that all cement junctions are pn-junctions (rather than some being nn+-junctions).

scholarly journals Phonon-drag Contribution to Seebeck Coefficient of Ge-on-insulator Substrate Fabricated by Wafer Bonding Process

2015 ◽  
Vol 19 (1) ◽  
pp. 21 ◽  
Author(s):  
Veerappan Manimuthu ◽  
Shoma Yoshida ◽  
Yuhei Suzuki ◽  
Faiz Salleh ◽  
Mukannan Arivanandhan ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Phonon Drag ◽  
Insulator Substrate

An enhanced Seebeck coefficient and high thermoelectric performance in p-type In and Mg co-doped Sn1−xPbxTe via the co-adjuvant effect of the resonance level and heavy hole valence band

2017 ◽  
Vol 5 (23) ◽  
pp. 5737-5748 ◽  
Author(s):  
Subhajit Roychowdhury ◽  
U. Sandhya Shenoy ◽  
Umesh V. Waghmare ◽  
Kanishka Biswas
Keyword(s):  
Synergistic Effect ◽  
Seebeck Coefficient ◽  
Valence Band ◽  
Heavy Hole ◽  
Resonance Level ◽  
Thermoelectric Performance ◽  
Adjuvant Effect ◽  
P Type ◽  
Co Doped

Remarkable enhancement of the Seebeck coefficient of an Sn rich Sn1−xPbxTe system due to the synergistic effect of resonance level formation and valence band convergence.

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